IXYT85N120A4HV

IXYS
747-IXYT85N120A4HV
IXYT85N120A4HV

Fabricante:

Descripción:
IGBTs TO268 1200V 85A XPT

Hoja de datos:
Modelo ECAD:
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En existencias: 475

Existencias:
475 Se puede enviar inmediatamente
Plazo de entrega de fábrica:
76 Semanas Tiempo estimado de producción de fábrica para cantidades superiores a las que se muestran.
Mínimo: 1   Múltiples: 1
Precio unitario:
$-.--
Precio ext.:
$-.--
Est. Tarifa:

Precio (USD)

Cantidad Precio unitario
Precio ext.
$24.27 $24.27
$15.52 $155.20
$14.45 $1,734.00

Atributo del producto Valor de atributo Seleccionar atributo
IXYS
Categoría de producto: IGBTs
RoHS:  
Si
D3PAK-3 (TO-268-3)
SMD/SMT
Single
1.2 kV
1.8 V
- 20 V, 20 V
300 A
1.15 kW
- 55 C
+ 175 C
Trench
Tube
Marca: IXYS
Máx. corriente continua Ic del colector: 520 A
Corriente de fuga puerta-emisor: 100 nA
Sensibles a la humedad: Yes
Tipo de producto: IGBT Transistors
Cantidad de empaque de fábrica: 30
Subcategoría: IGBTs
Nombre comercial: XPT
Productos encontrados:
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Atributos seleccionados: 0

Hoja de datos

PCN

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USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

AC/DC Power Supply

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Medical Equipment Solutions

Littelfuse Medical Equipment Solutions provide robust designed and quality components needed to help with reliable operating and equipment up-time. These solutions include ventilators, defibrillator, and ultrasounds. Littelfuse Medical Equipment Solutions are ideal for life support systems, patient care equipment, and patient monitoring systems.

Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low VSAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

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