DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs

Diodes Inc. DMT26M0LDG Asymmetrical Dual N-Channel MOSFETs are designed to minimize the on-state resistance [R_DS(ON)] yet maintain superior switching performance. These MOSFETs have a drain-source breakdown voltage (BV_DSS) of 25V. The static drain-source on-resistance [R_DS(ON)] for Q1 is 6mΩ at V_GS = 10V, 7.5mΩ at V_GS = 4.5V or Q2 is 2.0mΩ at V_GS = 10V, 3.1mΩ at V_GS = 4.5V. The continuous drain current (I_D) rating for Q1 is 11.6A at V_GS = 10V, 10.4A at V_GS = 4.5V, or Q2 is 20.1A at V_GS = 10V, 16.1A at V_GS = 4.5V. These ratings make these Diodes Inc. DMT26M0LDG devices ideal for high-efficiency power-management applications.