|
|
MOSFETs de SiC SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
$20.31
-
830En existencias
-
NRND
|
N.º de artículo de Mouser
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC SIC_DISCRETE
|
|
830En existencias
|
|
|
$20.31
|
|
|
$14.72
|
|
|
$14.09
|
|
|
$14.08
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
$15.35
-
738En existencias
|
N.º de artículo de Mouser
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
738En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
$5.34
-
2En existencias
-
11,000Se espera el 2/7/2026
|
N.º de artículo de Mouser
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
2En existencias
11,000Se espera el 2/7/2026
|
|
|
$5.34
|
|
|
$3.55
|
|
|
$2.88
|
|
|
$2.41
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
$7.31
-
388En existencias
|
N.º de artículo de Mouser
726-IMW120R140M1HXKS
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
388En existencias
|
|
|
$7.31
|
|
|
$4.23
|
|
|
$3.62
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
$14.73
-
8En existencias
-
1,200Se espera el 11/5/2026
-
NRND
|
N.º de artículo de Mouser
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
8En existencias
1,200Se espera el 11/5/2026
|
|
|
$14.73
|
|
|
$11.24
|
|
|
$8.89
|
|
|
$8.24
|
|
|
$8.02
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
$10.25
-
25En existencias
-
240Se espera el 26/11/2026
-
NRND
|
N.º de artículo de Mouser
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
25En existencias
240Se espera el 26/11/2026
|
|
|
$10.25
|
|
|
$6.66
|
|
|
$5.33
|
|
|
$5.03
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
$8.00
-
Plazo de entrega no en existencias 52 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
Plazo de entrega no en existencias 52 Semanas
|
|
|
$8.00
|
|
|
$4.92
|
|
|
$4.42
|
|
|
$3.87
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
