ADPA7009-2 GaAs pHEMT MMIC Power Amplifier

Analog Devices Inc. ADPA7009-2 GaAs pHEMT MMIC Power Amplifier is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5W power amplifier. The device comes with an integrated temperature-compensated, on-chip power detector that operates between 20GHz and 54GHz. The amplifier provides a gain of 17.5dB, an output power for 1dB compression (OP1dB) of 28dBm, and a typical output third-order intercept (OIP3) of 34.5dBm at 20GHz to 35GHz. The ADPA7009-2 requires 850mA from a 5V supply voltage (VDDx). The RF input and outputs are internally matched and DC-blocked for easy integration into higher-level assemblies. Most of the typically required external passive components for operation (AC coupling capacitors and power supply decoupling capacitors) are integrated, facilitating a small, compact printed circuit board (PCB) footprint. The Analog Devices Inc. ADPA7009-2 is available in a 5.00mm × 5.00mm, 24-terminal chip array, small outline, no lead cavity [LGA_CAV] package.