TRSx65H SiC Schottky Barrier Diodes

Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.

Resultados: 12
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Estilo de montaje Paquete / Cubierta If - Corriente directa Vrrm - Tensión inversa repetitiva Vf - Tensión directa Ifsm - Sobrecorriente en sentido directo Ir - Corriente inversa Empaquetado
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 3A TO-220-2L 1En existencias
Min.: 1
Mult.: 1

Through Hole TO-220-2L 3 A 650 V 1.2 V 170 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 10A DFN8x8 1,935En existencias
Min.: 1
Mult.: 1
: 2,500

SMD/SMT DFN-8 10 A 650 V 1.2 V 510 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 12A DFN8x8 3,968En existencias
Min.: 1
Mult.: 1
: 2,500

SMD/SMT DFN-8 12 A 650 V 1.2 V 640 A 2.4 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 4A DFN8x8 4,476En existencias
2,500Se espera el 11/5/2026
Min.: 1
Mult.: 1
: 2,500

SMD/SMT DFN-8 4 A 650 V 1.2 V 230 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 6A DFN8x8 4,849En existencias
Min.: 1
Mult.: 1
: 2,500

SMD/SMT DFN-8 6 A 650 V 1.2 V 310 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 8A DFN8x8 2,275En existencias
Min.: 1
Mult.: 1
: 2,500

SMD/SMT DFN-8 8 A 650 V 1.2 V 410 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 10A TO-220-2L 92En existencias
Min.: 1
Mult.: 1

Through Hole TO-220-2L 10 A 650 V 1.2 V 510 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 12A TO-220-2L 120En existencias
Min.: 1
Mult.: 1

Through Hole TO-220-2L 12 A 650 V 1.2 V 640 A 2.4 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 4A TO-220-2L 224En existencias
Min.: 1
Mult.: 1

Through Hole TO-220-2L 4 A 650 V 1.2 V 230 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 8A TO-220-2L 31En existencias
Min.: 1
Mult.: 1

Through Hole TO-220-2L 8 A 650 V 1.2 V 410 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 2A TO-220-2L
172Se espera el 6/11/2026
Min.: 1
Mult.: 1

Through Hole TO-220-2L 2 A 650 V 1.2 V 120 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 6A TO-220-2L
150Se espera el 15/5/2026
Min.: 1
Mult.: 1

Through Hole TO-220-2L 6 A 650 V 1.2 V 310 A 2 uA Tube