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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V DUAL N-CH LOGIC LEVEL HEXFET
- IRLHS6276TRPBF
- Infineon Technologies
-
1:
$0.81
-
11,660En existencias
|
N.º de artículo de Mouser
942-IRLHS6276TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V DUAL N-CH LOGIC LEVEL HEXFET
|
|
11,660En existencias
|
|
|
$0.81
|
|
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$0.502
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|
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$0.325
|
|
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$0.248
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|
|
$0.161
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|
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Ver
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|
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$0.22
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|
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$0.203
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$0.159
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$0.149
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Min.: 1
Mult.: 1
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Si
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SMD/SMT
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PQFN 2x2 (DFN2020)
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N-Channel
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2 Channel
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20 V
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4.5 A
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45 mOhms
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- 12 V, 12 V
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1.8 V
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3.1 nC
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- 55 C
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+ 150 C
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1.5 W
|
Enhancement
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StrongIRFET
|
Reel, Cut Tape, MouseReel
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|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 40V 280A 2.3mOhm 160nC Qg
- IRF2804PBF
- Infineon Technologies
-
1:
$2.53
-
2,351En existencias
|
N.º de artículo de Mouser
942-IRF2804PBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 40V 280A 2.3mOhm 160nC Qg
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2,351En existencias
|
|
|
$2.53
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|
|
$1.42
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|
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$1.32
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|
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$1.10
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|
|
Ver
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|
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$1.05
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|
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$1.00
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Presupuesto
|
|
Min.: 1
Mult.: 1
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|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
40 V
|
280 A
|
2 mOhms
|
- 20 V, 20 V
|
2 V
|
160 nC
|
- 55 C
|
+ 175 C
|
330 W
|
Enhancement
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|
Tube
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|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V 1 N-CH HEXFET 2.8nC
- IRLHS6376TRPBF
- Infineon Technologies
-
1:
$0.59
-
8,186En existencias
|
N.º de artículo de Mouser
942-IRLHS6376TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V 1 N-CH HEXFET 2.8nC
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8,186En existencias
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|
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$0.59
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|
|
$0.349
|
|
|
$0.287
|
|
|
$0.247
|
|
|
$0.181
|
|
|
Ver
|
|
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$0.224
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|
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$0.209
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|
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$0.158
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|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PQFN 2x2 (DFN2020)
|
N-Channel
|
2 Channel
|
30 V
|
3.6 A
|
63 mOhms
|
- 12 V, 12 V
|
1.8 V
|
2.8 nC
|
- 55 C
|
+ 150 C
|
1.5 W
|
Enhancement
|
StrongIRFET
|
Reel, Cut Tape, MouseReel
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V 8.3A 17.5mOhm 2.5V drive capable
- IRLTS6342TRPBF
- Infineon Technologies
-
1:
$0.58
-
3,324En existencias
-
3,000Se espera el 4/3/2026
|
N.º de artículo de Mouser
942-IRLTS6342TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V 8.3A 17.5mOhm 2.5V drive capable
|
|
3,324En existencias
3,000Se espera el 4/3/2026
|
|
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$0.58
|
|
|
$0.367
|
|
|
$0.229
|
|
|
$0.183
|
|
|
$0.119
|
|
|
Ver
|
|
|
$0.166
|
|
|
$0.114
|
|
|
$0.109
|
|
|
$0.105
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSOP-6
|
N-Channel
|
1 Channel
|
30 V
|
8.3 A
|
17.5 mOhms
|
- 12 V, 12 V
|
1.8 V
|
11 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
HEXFET
|
Reel, Cut Tape, MouseReel
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|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 250V 60A 33mOhm 99nC Qg
- IRFB4332PBF
- Infineon Technologies
-
1:
$3.91
-
5,967En pedido
-
Fin de vida útil
|
N.º de artículo de Mouser
942-IRFB4332PBF
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 250V 60A 33mOhm 99nC Qg
|
|
5,967En pedido
|
|
|
$3.91
|
|
|
$2.00
|
|
|
$1.81
|
|
|
$1.48
|
|
|
$1.42
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
250 V
|
60 A
|
33 mOhms
|
- 30 V, 30 V
|
1.8 V
|
99 nC
|
- 55 C
|
+ 175 C
|
390 W
|
Enhancement
|
|
Tube
|
|
