|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN50R2K0CEATMA1
- Infineon Technologies
-
1:
$0.85
-
11,742En existencias
|
N.º de artículo de Mouser
726-IPN50R2K0CEATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
11,742En existencias
|
|
|
$0.85
|
|
|
$0.527
|
|
|
$0.339
|
|
|
$0.257
|
|
|
$0.197
|
|
|
Ver
|
|
|
$0.227
|
|
|
$0.178
|
|
|
$0.161
|
|
|
$0.135
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
500 V
|
2.4 A
|
4.68 Ohms
|
- 20 V, 20 V
|
2.5 V
|
6 nC
|
- 40 C
|
+ 150 C
|
5 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R950CEAUMA1
- Infineon Technologies
-
1:
$0.94
-
4,489En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD50R950CEAUMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
4,489En existencias
|
|
|
$0.94
|
|
|
$0.587
|
|
|
$0.381
|
|
|
$0.292
|
|
|
$0.223
|
|
|
Ver
|
|
|
$0.264
|
|
|
$0.203
|
|
|
$0.195
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
6.6 A
|
2.25 Ohms
|
- 20 V, 20 V
|
3 V
|
10.5 nC
|
- 55 C
|
+ 150 C
|
53 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R280CEAUMA1
- Infineon Technologies
-
1:
$2.27
-
6,584En existencias
|
N.º de artículo de Mouser
726-IPD50R280CEAUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
6,584En existencias
|
|
|
$2.27
|
|
|
$1.43
|
|
|
$0.95
|
|
|
$0.753
|
|
|
$0.664
|
|
|
Ver
|
|
|
$0.678
|
|
|
$0.595
|
|
|
$0.551
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
18.1 A
|
280 mOhms
|
- 20 V, 20 V
|
3 V
|
32.6 nC
|
- 55 C
|
+ 150 C
|
119 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R380CEAUMA1
- Infineon Technologies
-
1:
$1.90
-
3,512En existencias
|
N.º de artículo de Mouser
726-IPD50R380CEAUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
3,512En existencias
|
|
|
$1.90
|
|
|
$1.21
|
|
|
$0.801
|
|
|
$0.629
|
|
|
$0.503
|
|
|
Ver
|
|
|
$0.559
|
|
|
$0.447
|
|
|
$0.422
|
|
|
$0.417
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
14.1 A
|
380 mOhms
|
- 20 V, 20 V
|
3 V
|
24.8 nC
|
- 55 C
|
+ 150 C
|
98 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R190CEXKSA2
- Infineon Technologies
-
1:
$3.03
-
2,000En existencias
|
N.º de artículo de Mouser
726-IPA50R190CEXKSA2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,000En existencias
|
|
|
$3.03
|
|
|
$1.61
|
|
|
$1.35
|
|
|
$1.05
|
|
|
Ver
|
|
|
$0.946
|
|
|
$0.887
|
|
|
$0.87
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
24.8 A
|
450 mOhms
|
- 20 V, 20 V
|
3 V
|
47.2 nC
|
- 40 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R500CEAUMA1
- Infineon Technologies
-
1:
$1.63
-
22,500En existencias
-
2,500Se espera el 8/8/2026
-
NRND
|
N.º de artículo de Mouser
726-IPD50R500CEAUMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
22,500En existencias
2,500Se espera el 8/8/2026
|
|
|
$1.63
|
|
|
$0.904
|
|
|
$0.615
|
|
|
$0.493
|
|
|
$0.399
|
|
|
Ver
|
|
|
$0.442
|
|
|
$0.359
|
|
|
$0.342
|
|
|
$0.332
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
7.6 A
|
500 mOhms
|
- 20 V, 20 V
|
3 V
|
18.7 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R800CE
- Infineon Technologies
-
1:
$1.46
-
239En existencias
|
N.º de artículo de Mouser
726-IPA50R800CE
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
239En existencias
|
|
|
$1.46
|
|
|
$0.901
|
|
|
$0.594
|
|
|
$0.466
|
|
|
Ver
|
|
|
$0.398
|
|
|
$0.361
|
|
|
$0.32
|
|
|
$0.309
|
|
|
$0.301
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
7.6 A
|
720 mOhms
|
- 20 V, 20 V
|
2.5 V
|
12.4 nC
|
- 40 C
|
+ 150 C
|
26.4 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R800CEXKSA2
- Infineon Technologies
-
1:
$1.30
-
1,534En existencias
|
N.º de artículo de Mouser
726-IPA50R800CEXKSA2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,534En existencias
|
|
|
$1.30
|
|
|
$0.604
|
|
|
$0.536
|
|
|
$0.466
|
|
|
Ver
|
|
|
$0.398
|
|
|
$0.345
|
|
|
$0.31
|
|
|
$0.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
7.6 A
|
720 mOhms
|
- 20 V, 20 V
|
2.5 V
|
12.4 nC
|
- 40 C
|
+ 150 C
|
26.4 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN50R1K4CEATMA1
- Infineon Technologies
-
1:
$0.77
-
3,236En existencias
|
N.º de artículo de Mouser
726-IPN50R1K4CEATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
3,236En existencias
|
|
|
$0.77
|
|
|
$0.511
|
|
|
$0.33
|
|
|
$0.248
|
|
|
$0.194
|
|
|
Ver
|
|
|
$0.217
|
|
|
$0.177
|
|
|
$0.155
|
|
|
$0.149
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
500 V
|
3.1 A
|
3.28 Ohms
|
- 20 V, 20 V
|
2.5 V
|
8.2 nC
|
- 40 C
|
+ 150 C
|
5 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R500CEXKSA2
- Infineon Technologies
-
1:
$1.73
-
926En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPA50R500CEXKSA2
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
926En existencias
|
|
|
$1.73
|
|
|
$0.816
|
|
|
$0.726
|
|
|
$0.568
|
|
|
Ver
|
|
|
$0.512
|
|
|
$0.488
|
|
|
$0.463
|
|
|
$0.456
|
|
|
$0.408
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
11.1 A
|
1.17 Ohms
|
- 20 V, 20 V
|
3 V
|
18.7 nC
|
- 40 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R280CEXKSA2
- Infineon Technologies
-
1:
$1.98
-
2,400En existencias
-
1,500Se espera el 17/6/2027
|
N.º de artículo de Mouser
726-IPA50R280CEXKSA2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,400En existencias
1,500Se espera el 17/6/2027
|
|
|
$1.98
|
|
|
$1.01
|
|
|
$0.835
|
|
|
$0.684
|
|
|
Ver
|
|
|
$0.587
|
|
|
$0.554
|
|
|
$0.523
|
|
|
$0.493
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
18.1 A
|
280 mOhms
|
- 20 V, 20 V
|
3.5 V
|
32.6 nC
|
- 40 C
|
+ 150 C
|
30.4 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R380CE
- Infineon Technologies
-
1:
$1.77
-
693En existencias
|
N.º de artículo de Mouser
726-IPA50R380CE
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
693En existencias
|
|
|
$1.77
|
|
|
$1.11
|
|
|
$0.728
|
|
|
$0.576
|
|
|
Ver
|
|
|
$0.512
|
|
|
$0.468
|
|
|
$0.45
|
|
|
$0.437
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
14.1 A
|
340 mOhms
|
- 20 V, 20 V
|
2.5 V
|
24.8 nC
|
- 40 C
|
+ 150 C
|
29.2 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R380CEXKSA2
- Infineon Technologies
-
1:
$1.77
-
1,475En existencias
|
N.º de artículo de Mouser
726-IPA50R380CEXKSA2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,475En existencias
|
|
|
$1.77
|
|
|
$1.11
|
|
|
$0.818
|
|
|
$0.67
|
|
|
Ver
|
|
|
$0.562
|
|
|
$0.473
|
|
|
$0.442
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
14.1 A
|
340 mOhms
|
- 20 V, 20 V
|
2.5 V
|
24.8 nC
|
- 40 C
|
+ 150 C
|
29.2 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA50R950CEXKSA2
- Infineon Technologies
-
1:
$1.43
-
998En existencias
|
N.º de artículo de Mouser
726-IPA50R950CEXKSA2
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
998En existencias
|
|
|
$1.43
|
|
|
$0.691
|
|
|
$0.594
|
|
|
$0.483
|
|
|
Ver
|
|
|
$0.387
|
|
|
$0.365
|
|
|
$0.339
|
|
|
$0.316
|
|
|
$0.302
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
550 V
|
6.6 A
|
2.22 Ohms
|
- 20 V, 20 V
|
3 V
|
10.5 nC
|
- 40 C
|
+ 150 C
|
25.7 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R2K0CEAUMA1
- Infineon Technologies
-
1:
$0.80
-
328En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD50R2K0CEAUMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
328En existencias
|
|
|
$0.80
|
|
|
$0.494
|
|
|
$0.319
|
|
|
$0.243
|
|
|
$0.191
|
|
|
Ver
|
|
|
$0.219
|
|
|
$0.166
|
|
|
$0.153
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
3.6 A
|
2 Ohms
|
- 20 V, 20 V
|
3 V
|
6 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 18.5A TO220-3
- IPP50R190CE
- Infineon Technologies
-
1:
$2.79
-
500Se espera el 9/7/2026
|
N.º de artículo de Mouser
726-IPP50R190CE
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 18.5A TO220-3
|
|
500Se espera el 9/7/2026
|
|
|
$2.79
|
|
|
$1.80
|
|
|
$1.24
|
|
|
$1.00
|
|
|
Ver
|
|
|
$0.932
|
|
|
$0.899
|
|
|
$0.875
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
24.8 A
|
190 mOhms
|
- 20 V, 20 V
|
2.5 V
|
47.2 nC
|
- 55 C
|
+ 150 C
|
152 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 18.5A TO220-3
- IPP50R190CEXKSA1
- Infineon Technologies
-
1:
$3.03
-
995Se espera el 9/7/2026
|
N.º de artículo de Mouser
726-IPP50R190CEXKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 18.5A TO220-3
|
|
995Se espera el 9/7/2026
|
|
|
$3.03
|
|
|
$1.61
|
|
|
$1.35
|
|
|
$1.03
|
|
|
Ver
|
|
|
$0.877
|
|
|
$0.87
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
24.8 A
|
170 mOhms
|
- 20 V, 20 V
|
2.5 V
|
47.2 nC
|
- 55 C
|
+ 150 C
|
152 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD50R3K0CEAUMA1
- Infineon Technologies
-
1:
$0.78
-
2,422Se espera el 6/8/2026
-
Fin de vida útil
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N.º de artículo de Mouser
726-IPD50R3K0CEAUMA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,422Se espera el 6/8/2026
|
|
|
$0.78
|
|
|
$0.529
|
|
|
$0.342
|
|
|
$0.253
|
|
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$0.223
|
|
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$0.213
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Min.: 1
Mult.: 1
:
2,500
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|
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Si
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SMD/SMT
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DPAK-3 (TO-252-3)
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N-Channel
|
1 Channel
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500 V
|
2.6 A
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3 Ohms
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- 20 V, 20 V
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3 V
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4.3 nC
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- 55 C
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+ 150 C
|
26 W
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Enhancement
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CoolMOS
|
Reel, Cut Tape, MouseReel
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