|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPG20N04S418AATMA1
- Infineon Technologies
-
1:
$1.82
-
1,567En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
726-IPG20N04S418AATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
1,567En existencias
5,000En pedido
|
|
|
$1.82
|
|
|
$1.14
|
|
|
$0.743
|
|
|
$0.572
|
|
|
$0.442
|
|
|
Ver
|
|
|
$0.517
|
|
|
$0.47
|
|
|
$0.427
|
|
|
$0.415
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
40 V
|
20 A
|
18 mOhms
|
- 20 V, 20 V
|
3 V
|
8.7 nC
|
- 55 C
|
+ 175 C
|
26 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IAUC60N04S6L030HATMA1
- Infineon Technologies
-
1:
$2.55
-
11,763En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IAUC60N04S6L030H
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
11,763En existencias
|
|
|
$2.55
|
|
|
$1.64
|
|
|
$1.12
|
|
|
$0.896
|
|
|
$0.765
|
|
|
$0.765
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
40 V
|
119 A
|
3 mOhms
|
- 16 V, 16 V
|
2 V
|
27 nC
|
- 55 C
|
+ 175 C
|
75 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IAUC100N04S6L020ATMA1
- Infineon Technologies
-
1:
$1.76
-
8,372En existencias
|
N.º de artículo de Mouser
726-IAUC100N04S6L020
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
8,372En existencias
|
|
|
$1.76
|
|
|
$1.12
|
|
|
$0.745
|
|
|
$0.587
|
|
|
$0.493
|
|
|
$0.458
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
2.26 mOhms
|
- 16 V, 16 V
|
1.6 V
|
34 nC
|
- 55 C
|
+ 175 C
|
75 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUC100N08S5N031ATMA1
- Infineon Technologies
-
1:
$2.98
-
9,190En existencias
|
N.º de artículo de Mouser
726-IAUC100N08S5N031
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
9,190En existencias
|
|
|
$2.98
|
|
|
$1.91
|
|
|
$1.30
|
|
|
$1.09
|
|
|
$1.03
|
|
|
$0.937
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
3.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
76 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IAUC41N06S5L100ATMA1
- Infineon Technologies
-
1:
$1.44
-
4,550En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
726-IAUC41N06S5L100A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
4,550En existencias
5,000En pedido
|
|
|
$1.44
|
|
|
$0.909
|
|
|
$0.602
|
|
|
$0.47
|
|
|
$0.392
|
|
|
$0.348
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8-3
|
N-Channel
|
1 Channel
|
60 V
|
41 A
|
10 mOhms
|
- 16 V, 16 V
|
1.7 V
|
12.7 nC
|
- 55 C
|
+ 175 C
|
42 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUC90N10S5N062ATMA1
- Infineon Technologies
-
1:
$2.50
-
4,227En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
726-IAUC90N10S5N062A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
4,227En existencias
5,000En pedido
|
|
|
$2.50
|
|
|
$1.60
|
|
|
$1.09
|
|
|
$0.901
|
|
|
Ver
|
|
|
$0.737
|
|
|
$0.809
|
|
|
$0.79
|
|
|
$0.737
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
90 A
|
6.2 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 175 C
|
115 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUT300N10S5N015ATMA1
- Infineon Technologies
-
1:
$6.39
-
1,500En existencias
-
6,000Se espera el 18/6/2026
|
N.º de artículo de Mouser
726-IAUT300N10S5N015
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
1,500En existencias
6,000Se espera el 18/6/2026
|
|
|
$6.39
|
|
|
$4.03
|
|
|
$2.90
|
|
|
$2.86
|
|
|
$2.65
|
|
|
Ver
|
|
|
$2.82
|
|
|
$2.58
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
300 A
|
1.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
166 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUZ20N08S5L300ATMA1
- Infineon Technologies
-
1:
$1.27
-
5,258En existencias
|
N.º de artículo de Mouser
726-IAUZ20N08S5L300A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
5,258En existencias
|
|
|
$1.27
|
|
|
$0.797
|
|
|
$0.523
|
|
|
$0.403
|
|
|
$0.311
|
|
|
Ver
|
|
|
$0.338
|
|
|
$0.332
|
|
|
$0.292
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
20 A
|
30 mOhms
|
- 20 V, 20 V
|
2 V
|
8.1 nC
|
- 55 C
|
+ 175 C
|
30 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUS300N08S5N014TATMA1
- Infineon Technologies
-
1:
$6.53
-
2,200En existencias
|
N.º de artículo de Mouser
726-US300N08S5N014T1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
2,200En existencias
|
|
|
$6.53
|
|
|
$4.38
|
|
|
$3.16
|
|
|
$2.93
|
|
|
$2.74
|
|
|
$2.74
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HSOG-8
|
N-Channel
|
1 Channel
|
80 V
|
300 A
|
1.4 mOhms
|
- 20 V, 20 V
|
3.8 V
|
144 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUS200N08S5N023ATMA1
- Infineon Technologies
-
1:
$4.71
-
790En existencias
|
N.º de artículo de Mouser
726-IAUS200N08S5N023
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
790En existencias
|
|
|
$4.71
|
|
|
$3.11
|
|
|
$2.20
|
|
|
$2.04
|
|
|
$1.77
|
|
|
$1.77
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HSOG-8
|
N-Channel
|
1 Channel
|
80 V
|
200 A
|
3.7 mOhms
|
- 20 V, 20 V
|
2.2 V
|
110 nC
|
- 55 C
|
+ 175 C
|
200 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|