|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 100V 6.5m max(VGS=10V) DPAK
- TK55S10N1,LQ
- Toshiba
-
1:
$3.65
-
1,560En existencias
|
N.º de artículo de Mouser
757-TK55S10N1LQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 100V 6.5m max(VGS=10V) DPAK
|
|
1,560En existencias
|
|
|
$3.65
|
|
|
$2.39
|
|
|
$1.68
|
|
|
$1.47
|
|
|
$1.35
|
|
|
$1.19
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
55 A
|
5.5 mOhms
|
- 20 V, 20 V
|
4 V
|
49 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
AEC-Q101
|
U-MOSVIII-H
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 40V 2.3m max(VGS=10V) DPAK
- TK100S04N1L,LQ
- Toshiba
-
1:
$3.50
-
3,703En existencias
|
N.º de artículo de Mouser
757-TK100S04N1LLQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 40V 2.3m max(VGS=10V) DPAK
|
|
3,703En existencias
|
|
|
$3.50
|
|
|
$2.28
|
|
|
$1.60
|
|
|
$1.39
|
|
|
$1.29
|
|
|
$1.13
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1.9 mOhms
|
- 20 V, 20 V
|
2.5 V
|
76 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
AEC-Q101
|
U-MOSVIII-H
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -60A -40V 90W 6510pF 0.0063
- TJ60S04M3L(T6L1,NQ
- Toshiba
-
1:
$1.68
-
1,308En existencias
|
N.º de artículo de Mouser
757-TJ60S04M3LT6L1NQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -60A -40V 90W 6510pF 0.0063
|
|
1,308En existencias
|
|
|
$1.68
|
|
|
$1.24
|
|
|
$0.838
|
|
|
$0.664
|
|
|
$0.544
|
|
|
Ver
|
|
|
$0.609
|
|
|
$0.506
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
40 V
|
60 A
|
6.3 mOhms
|
- 20 V, 10 V
|
3 V
|
125 nC
|
- 55 C
|
+ 175 C
|
90 W
|
Enhancement
|
AEC-Q100
|
U-MOSVI
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -80A -40V 100W 7770pF 0.0052
- TJ80S04M3L(T6L1,NQ
- Toshiba
-
2,000:
$0.496
-
Plazo de entrega no en existencias 20 Semanas
|
N.º de artículo de Mouser
757-TJ80S04M3LT6L1NQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -80A -40V 100W 7770pF 0.0052
|
|
Plazo de entrega no en existencias 20 Semanas
|
|
|
$0.496
|
|
|
$0.453
|
|
Min.: 2,000
Mult.: 2,000
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
40 V
|
80 A
|
5.2 mOhms
|
|
|
|
|
|
100 W
|
|
AEC-Q100
|
U-MOSVI
|
Reel
|
|
