|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 88A D2PAK-2
- IPB107N20NAXT
- Infineon Technologies
-
1:
$9.86
-
3,837En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPB107N20NAATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 88A D2PAK-2
|
|
3,837En existencias
|
|
|
$9.86
|
|
|
$7.48
|
|
|
$6.23
|
|
|
$5.55
|
|
|
$4.94
|
|
|
Ver
|
|
|
$4.93
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
200 V
|
88 A
|
9.6 mOhms
|
- 20 V, 20 V
|
2 V
|
87 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 34A D2PAK-2 OptiMOS 3
- IPB320N20N3 G
- Infineon Technologies
-
1:
$3.80
-
2,614En existencias
-
3,000Se espera el 26/2/2026
|
N.º de artículo de Mouser
726-IPB320N20N3GXT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 34A D2PAK-2 OptiMOS 3
|
|
2,614En existencias
3,000Se espera el 26/2/2026
|
|
|
$3.80
|
|
|
$2.48
|
|
|
$1.94
|
|
|
$1.63
|
|
|
$1.38
|
|
|
$1.32
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
200 V
|
34 A
|
28 mOhms
|
- 20 V, 20 V
|
2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 88A D2PAK-2 OptiMOS 3
- IPB107N20N3 G
- Infineon Technologies
-
1:
$5.86
-
4,595En existencias
|
N.º de artículo de Mouser
726-IPB107N20N3GXT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 88A D2PAK-2 OptiMOS 3
|
|
4,595En existencias
|
|
|
$5.86
|
|
|
$4.43
|
|
|
$3.58
|
|
|
$3.20
|
|
|
$2.72
|
|
|
$2.71
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
200 V
|
88 A
|
9.6 mOhms
|
- 20 V, 20 V
|
2 V
|
87 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 88A TO220-3 OptiMOS 3
- IPP110N20N3 G
- Infineon Technologies
-
1:
$5.13
-
2,219En existencias
|
N.º de artículo de Mouser
726-IPP110N20N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 88A TO220-3 OptiMOS 3
|
|
2,219En existencias
|
|
|
$5.13
|
|
|
$3.41
|
|
|
$2.81
|
|
|
$2.38
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
200 V
|
88 A
|
9.9 mOhms
|
- 20 V, 20 V
|
2 V
|
87 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Tube
|
|
