|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 21A D2PAK-2 CoolMOS C3
- SPB21N50C3
- Infineon Technologies
-
1:
$3.20
-
1,432En existencias
|
N.º de artículo de Mouser
726-SPB21N50C3
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 21A D2PAK-2 CoolMOS C3
|
|
1,432En existencias
|
|
|
$3.20
|
|
|
$2.46
|
|
|
$2.02
|
|
|
$1.87
|
|
|
$1.56
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
500 V
|
21 A
|
190 mOhms
|
- 20 V, 20 V
|
3.9 V
|
95 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- SPD08N50C3ATMA1
- Infineon Technologies
-
1:
$2.62
-
2,538En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPD08N50C3ATMA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
2,538En existencias
|
|
|
$2.62
|
|
|
$1.69
|
|
|
$1.15
|
|
|
$0.921
|
|
|
$0.857
|
|
|
$0.815
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
7.6 A
|
600 mOhms
|
- 20 V, 20 V
|
3.9 V
|
32 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 47A TO247-3 CoolMOS C3
- SPW47N65C3
- Infineon Technologies
-
1:
$15.78
-
274En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPW47N65C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 47A TO247-3 CoolMOS C3
|
|
274En existencias
|
|
|
$15.78
|
|
|
$13.50
|
|
|
$7.14
|
|
|
$6.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
70 mOhms
|
- 20 V, 20 V
|
2.1 V
|
255 nC
|
- 55 C
|
+ 150 C
|
415 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- SPD04N60C3ATMA1
- Infineon Technologies
-
1:
$2.49
-
2,836En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPD04N60C3ATMA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
2,836En existencias
|
|
|
$2.49
|
|
|
$1.60
|
|
|
$1.10
|
|
|
$0.875
|
|
|
$0.807
|
|
|
$0.756
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
4.5 A
|
950 mOhms
|
- 20 V, 20 V
|
3.9 V
|
19 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 34.6A TO247-3 CoolMOS C3
- SPW35N60C3FKSA1
- Infineon Technologies
-
1:
$10.30
-
240En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPW35N60C3FKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 34.6A TO247-3 CoolMOS C3
|
|
240En existencias
|
|
|
$10.30
|
|
|
$6.20
|
|
|
$5.25
|
|
|
$5.12
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
34.6 A
|
81 mOhms
|
- 20 V, 20 V
|
2.1 V
|
200 nC
|
- 55 C
|
+ 150 C
|
313 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 34.6A TO247-3 CoolMOS C3
- SPW35N60C3
- Infineon Technologies
-
1:
$9.74
-
188En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPW35N60C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 34.6A TO247-3 CoolMOS C3
|
|
188En existencias
|
|
|
$9.74
|
|
|
$7.39
|
|
|
$6.16
|
|
|
$5.48
|
|
|
Ver
|
|
|
$5.12
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
34.6 A
|
100 mOhms
|
- 20 V, 20 V
|
2.1 V
|
150 nC
|
- 55 C
|
+ 150 C
|
313 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO220-3
- SPP20N65C3XKSA1
- Infineon Technologies
-
1:
$5.27
-
420En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPP20N65C3XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO220-3
|
|
420En existencias
|
|
|
$5.27
|
|
|
$2.74
|
|
|
$2.49
|
|
|
$2.05
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
20.7 A
|
160 mOhms
|
- 20 V, 20 V
|
3.9 V
|
87 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- SPD03N60C3ATMA1
- Infineon Technologies
-
1:
$1.83
-
2,025En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPD03N60C3ATMA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
2,025En existencias
|
|
|
$1.83
|
|
|
$0.809
|
|
|
$0.614
|
|
|
$0.539
|
|
|
$0.531
|
|
|
$0.531
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
3.2 A
|
1.4 Ohms
|
- 20 V, 20 V
|
3.9 V
|
13 nC
|
- 55 C
|
+ 150 C
|
38 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 15A TO220FP-3 CoolMOS C3
- SPA15N60C3
- Infineon Technologies
-
1:
$4.29
-
569En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPA15N60C3
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 15A TO220FP-3 CoolMOS C3
|
|
569En existencias
|
|
|
$4.29
|
|
|
$2.20
|
|
|
$1.96
|
|
|
$1.77
|
|
|
$1.75
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
600 V
|
15 A
|
280 mOhms
|
- 20 V, 20 V
|
3.9 V
|
63 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 20.7A TO220FP-3 CoolMOS C3
- SPA20N60C3
- Infineon Technologies
-
1:
$4.60
-
619En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPA20N60C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 20.7A TO220FP-3 CoolMOS C3
|
|
619En existencias
|
|
|
$4.60
|
|
|
$2.88
|
|
|
$2.18
|
|
|
$2.00
|
|
|
$1.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
600 V
|
20.7 A
|
190 mOhms
|
- 20 V, 20 V
|
2.1 V
|
87 nC
|
- 55 C
|
+ 150 C
|
34.5 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A D2PAK-2 CoolMOS C3
- SPB20N60C3
- Infineon Technologies
-
1:
$4.47
-
1,596En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPB20N60C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A D2PAK-2 CoolMOS C3
|
|
1,596En existencias
|
|
|
$4.47
|
|
|
$2.95
|
|
|
$2.08
|
|
|
$1.78
|
|
|
$1.68
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
20.7 A
|
190 mOhms
|
- 20 V, 20 V
|
2.1 V
|
87 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO247-3 CoolMOS C3
- SPW20N60C3
- Infineon Technologies
-
1:
$5.00
-
1,557En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPW20N60C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO247-3 CoolMOS C3
|
|
1,557En existencias
|
|
|
$5.00
|
|
|
$2.81
|
|
|
$2.21
|
|
|
$2.17
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
20.7 A
|
190 mOhms
|
- 20 V, 20 V
|
2.1 V
|
87 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 47A TO247-3 CoolMOS C3
- SPW47N60C3
- Infineon Technologies
-
1:
$12.01
-
1,722En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPW47N60C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 47A TO247-3 CoolMOS C3
|
|
1,722En existencias
|
|
|
$12.01
|
|
|
$7.24
|
|
|
$6.95
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
47 A
|
70 mOhms
|
- 20 V, 20 V
|
2.1 V
|
252 nC
|
- 55 C
|
+ 150 C
|
415 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 560V 32A TO247-3 CoolMOS C3
- SPW32N50C3
- Infineon Technologies
-
1:
$9.37
-
1,175En existencias
|
N.º de artículo de Mouser
726-SPW32N50C3
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 560V 32A TO247-3 CoolMOS C3
|
|
1,175En existencias
|
|
|
$9.37
|
|
|
$5.59
|
|
|
$4.72
|
|
|
$4.71
|
|
|
$4.52
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
500 V
|
32 A
|
110 mOhms
|
- 20 V, 20 V
|
2.1 V
|
170 nC
|
- 55 C
|
+ 150 C
|
284 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 7.3A TO220-3
- SPP07N60C3XKSA1
- Infineon Technologies
-
1:
$2.99
-
220En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPP07N60C3XKSA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 7.3A TO220-3
|
|
220En existencias
|
|
|
$2.99
|
|
|
$1.50
|
|
|
$1.35
|
|
|
$1.09
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
7.3 A
|
600 mOhms
|
- 20 V, 20 V
|
3.9 V
|
21 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 11A TO220-3
- SPP11N60C3XKSA1
- Infineon Technologies
-
1:
$3.30
-
555En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPP11N60C3XKSA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 11A TO220-3
|
|
555En existencias
|
|
|
$3.30
|
|
|
$1.66
|
|
|
$1.50
|
|
|
$1.25
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
380 mOhms
|
- 20 V, 20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 11A D2PAK-2 CoolMOS C3
- SPB11N60C3
- Infineon Technologies
-
1:
$4.60
-
395En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPB11N60C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 11A D2PAK-2 CoolMOS C3
|
|
395En existencias
|
|
|
$4.60
|
|
|
$2.92
|
|
|
$2.14
|
|
|
$1.76
|
|
|
$1.65
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
380 mOhms
|
- 20 V, 20 V
|
2.1 V
|
45 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO220-3
- SPP20N60C3XKSA1
- Infineon Technologies
-
1:
$4.41
-
626En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPP20N60C3XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO220-3
|
|
626En existencias
|
|
|
$4.41
|
|
|
$2.31
|
|
|
$2.09
|
|
|
$1.71
|
|
|
$1.66
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20.7 A
|
190 mOhms
|
- 20 V, 20 V
|
2.1 V
|
87 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 560V 16A TO247-3 CoolMOS C3
- SPW16N50C3
- Infineon Technologies
-
1:
$4.39
-
372En existencias
|
N.º de artículo de Mouser
726-SPW16N50C3
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 560V 16A TO247-3 CoolMOS C3
|
|
372En existencias
|
|
|
$4.39
|
|
|
$2.44
|
|
|
$2.41
|
|
|
$1.84
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
500 V
|
16 A
|
280 mOhms
|
- 20 V, 20 V
|
3.9 V
|
66 nC
|
- 55 C
|
+ 150 C
|
160 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 11A TO220FP-3 CoolMOS C3
- SPA11N60C3
- Infineon Technologies
-
1:
$3.79
-
436En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPA11N60C3
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 11A TO220FP-3 CoolMOS C3
|
|
436En existencias
|
|
|
$3.79
|
|
|
$1.95
|
|
|
$1.77
|
|
|
$1.43
|
|
|
$1.35
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
380 mOhms
|
- 20 V, 20 V
|
2.1 V
|
45 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 24.3A TO220-3
- SPP24N60C3XKSA1
- Infineon Technologies
-
1:
$5.34
-
211En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPP24N60C3XKSA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 24.3A TO220-3
|
|
211En existencias
|
|
|
$5.34
|
|
|
$3.46
|
|
|
$3.15
|
|
|
$3.14
|
|
|
$3.11
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
24.3 A
|
160 mOhms
|
- 20 V, 20 V
|
3.9 V
|
104.9 nC
|
- 55 C
|
+ 150 C
|
240 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.3A TO220FP-3 CoolMOS C3
- SPA07N60C3
- Infineon Technologies
-
1:
$3.05
-
92En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPA07N60C3
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.3A TO220FP-3 CoolMOS C3
|
|
92En existencias
|
|
|
$3.05
|
|
|
$1.55
|
|
|
$1.39
|
|
|
$1.11
|
|
|
Ver
|
|
|
$1.07
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
600 V
|
7.3 A
|
600 mOhms
|
- 20 V, 20 V
|
2.1 V
|
21 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- SPD07N60C3ATMA1
- Infineon Technologies
-
1:
$3.08
-
917En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPD07N60C3ATMA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
917En existencias
|
|
|
$3.08
|
|
|
$2.00
|
|
|
$1.39
|
|
|
$1.16
|
|
|
$1.12
|
|
|
$1.05
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
7.3 A
|
600 mOhms
|
- 20 V, 20 V
|
3.9 V
|
21 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 11A TO220FP-3 CoolMOS C3
- SPA11N65C3
- Infineon Technologies
-
1:
$3.00
-
Plazo de entrega 11 Semanas
-
NRND
|
N.º de artículo de Mouser
726-SPA11N65C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 11A TO220FP-3 CoolMOS C3
|
|
Plazo de entrega 11 Semanas
|
|
|
$3.00
|
|
|
$1.50
|
|
|
$1.35
|
|
|
$1.09
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
380 mOhms
|
- 20 V, 20 V
|
3.9 V
|
45 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 560V 21A I2PAK-3
- SPI21N50C3XKSA1
- Infineon Technologies
-
1:
$4.16
-
Plazo de entrega no en existencias 8 Semanas
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPI21N50C3XKSA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 560V 21A I2PAK-3
|
|
Plazo de entrega no en existencias 8 Semanas
|
|
|
$4.16
|
|
|
$2.14
|
|
|
$1.94
|
|
|
$1.71
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
500 V
|
21 A
|
190 mOhms
|
- 20 V, 20 V
|
3 V
|
95 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Tube
|
|