Filtros aplicados:
Nexperia BUK7Q N-Channel MOSFET in MLPAK33-WF Package
09/29/2025
09/29/2025
Uses Trench 9 technology, meets AEC-Q101 requirements.
Nexperia BUK9Q N-Channel Trench MOSFET
09/09/2025
09/09/2025
Logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.
Nexperia BUK6Q8R2-30PJ MOSFET
08/27/2025
08/27/2025
P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.
Nexperia BUK6Q66-60PJ MOSFET
08/27/2025
08/27/2025
P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.
Nexperia MJPEx Bipolar Junction Transistors (BJTs)
08/26/2025
08/26/2025
CFP15B package offers a compact & cost-efficient alternative to the MJD series in the DPAK package.
Nexperia BUK6Q12-40PJ MOSFET
08/19/2025
08/19/2025
P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.
Nexperia BUK6Q26-40PJ MOSFET
08/19/2025
08/19/2025
P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.
Nexperia BUK6Q21-30PJ MOSFET
08/19/2025
08/19/2025
30V, P-channel FET in an MLPAK33 (SOT8002-3) SMD plastic package using Trench MOSFET technology.
Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs
07/03/2025
07/03/2025
40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETs
07/03/2025
07/03/2025
Normally off e-mode devices that deliver superior performance and very low on-state resistance.
Nexperia GANB8R0-040CBA Bi-Directional GaN FET
04/14/2025
04/14/2025
40V, 8.0mΩ bi-directional GaN HEMT housed in a compact 1.7mm x 1.7mm WLCSP package.
Nexperia PXNx N-Channel Logic Level Trench MOSFETs
04/14/2025
04/14/2025
60V and 100V MOSFETS designed for high-efficiency power management in various applications.
Nexperia NX5020x N-Channel Enhancement Mode FETs
04/01/2025
04/01/2025
Devices have a very low threshold voltage and very fast switching using Trench MOSFET technology.
Nexperia MOSFET de potencia para aplicaciones específicas
01/21/2025
01/21/2025
Combines proven MOSFET expertise with broad application understanding to create an expanding range.
Nexperia ASFET CCPAK para intercambio de datos y arranque suave
01/08/2025
01/08/2025
Offers a reliable linear mode, enhanced SOA, and low RDS(on) in a single device.
Nexperia BC5xPAS-Q 1A Medium Power PNP Transistors
12/30/2024
12/30/2024
AEC-Q101 qualified PNP transistors in an ultra-thin DFN2020D-3 (SOT1061D) SMD plastic package.
Nexperia BC869-Q Power Transistors
12/11/2024
12/11/2024
PNP medium power transistors in a SOT89 (SC-62) medium power and flat lead plastic package.
Nexperia FET GaN bidireccional GANB4R8-040CBA
10/01/2024
10/01/2024
Un transistor de alta movilidad de electrones (HEMT) GaN bidireccional de 40 V y 4.8 mΩ en un paquete WLCSP.
Nexperia MOSFET de canal N BUK7J2R4-80M
08/30/2024
08/30/2024
Basado en la tecnología de puertas divididas de bajo nivel óhmico Trench 14 y alojado en un paquete LFPAK56E.
Nexperia Transistores PBSSxx50PAS/PBSSxx50PAS-Q
07/04/2024
07/04/2024
Provides low collector-emitter saturation voltage and high collector current capability.
Nexperia FET GANE3R9-150QBA de nitruro de galio (GaN)
07/02/2024
07/02/2024
Un FET de nitruro de galio (GaN) de 150 V y 3.9 mΩ de uso general en un paquete VQFN.
Nexperia MOSFET SiC de canal N NSF0x0120
07/01/2024
07/01/2024
Offers superior RDS(on) temperature stability in a standard 7-pin TO-263 plastic package.
Nexperia MOSFET de canal N NextPower PSMNxRx-80YSF
06/24/2024
06/24/2024
Controladores de puerta MOSFET de nivel estándar de 80 V con un bajo nivel de Qrr para obtener una mayor eficiencia y un menor aumento de picos.
Nexperia NSF0x120L4A0 N-Channel MOSFETs
04/23/2024
04/23/2024
Silicon Carbide (SiC) based 1200V power MOSFETs in well-established 4-pin TO-247 plastic packages.
Nexperia MOSFET de tipo trinchera de canal N BSS138AK
04/04/2024
04/04/2024
AEC-Q101-qualified N-channel enhancement mode Field-Effect Transistors (FETs) in small SMD packages.
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onsemi NVBYST0D8N08X Single N-Channel Power MOSFET
04/14/2026
04/14/2026
Optimized for high‑voltage operation and withstands fast switching and high-current stresses.
ROHM Semiconductor High-Density SiC Power Modules
04/10/2026
04/10/2026
TRCDRIVE pack™, DOT-247, and HSDIP20 packages contribute to high-performance power conversion.
iDEAL Semiconductor IS20M8R0S1P SuperQ™ 200V N-Channel Power MOSFET
04/07/2026
04/07/2026
Low switching losses, high short-circuit withstand capability (SCWC), and comes in a TO-220 package.
onsemi NTMFD0D9N02P1E MOSFET
04/06/2026
04/06/2026
Dual N-channel MOSFET designed with low Rg for fast switching applications.
Vishay Módulo MOSFET de potencia VS-HOT200C080 de 200 A a 80 V
04/02/2026
04/02/2026
This device reduces board space requirements by up to 15% compared to standard discrete solutions.
Toshiba N-Channel/P-Channel Power MOSFETs
03/31/2026
03/31/2026
Ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.
STMicroelectronics STL059N4S8AG Power MOSFET
03/31/2026
03/31/2026
A 40V N-channel enhancement mode Power MOSFET designed in Smart STripFET F8 technology.
Infineon Technologies N-Channel OptiMOS™ 7 25V Power MOSFETs
03/27/2026
03/27/2026
Application-optimized performance, enabling peak performance for data centers, servers, & AI.
Infineon Technologies OptiMOS™ 6 60V Power MOSFETs
03/27/2026
03/27/2026
Delivers superior performance to OptiMOS 5 via robust power MOSFET technology.
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
03/24/2026
03/24/2026
Delivers ultra-low conduction and switching losses in a robust TO-220 package.
Renesas Electronics TP65B110HRU Bi-Directional Switch (BDS)
03/20/2026
03/20/2026
650V and 110mΩ normally-off Gallium Nitride (GaN) BDS in a compact TOLT package.
Infineon Technologies OptiMOS™ 8 Power MOSFETs
03/17/2026
03/17/2026
These are N-channel, normal level 80V or 100V MOSFETs with very low on-resistance [RDS(ON)].
ROHM Semiconductor BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules
03/17/2026
03/17/2026
Features 1200V rated voltage in 41.6mm × 52.5mm package and integrates 4th Generation SiC MOSFETs.
Infineon Technologies Medium-Voltage CoolGaN™ Bidirectional Switches
03/17/2026
03/17/2026
These devices are a great fit for serving as battery disconnect switches in various applications.
onsemi NVMFD5873NL Dual N-Channel Power MOSFETs
03/13/2026
03/13/2026
Designed for compact and efficient designs, including high thermal performance.
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.
Qorvo QPD2560L 300W GaN/SiC HEMT
03/09/2026
03/09/2026
Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
03/06/2026
03/06/2026
Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.
EPC EPC2302 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.
EPC EPC2305 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.
Infineon Technologies N-Channel OptiMOS™ 7 80V Power MOSFETs
03/05/2026
03/05/2026
80V, N-channel, normal level devices with superior thermal resistance in a PG‑TDSON‑8 package.
EPC EPC2304 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Handles tasks where ultra-high switching frequency and low on-time are advantageous.
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