Qorvo El/los Transistores de radiofrecuencia más reciente(s)

Tipos de Transistores de radiofrecuencia

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Qorvo pHEMT GaAs discreto de 600 µm QPD2060D
Qorvo pHEMT GaAs discreto de 600 µm QPD2060D
04/19/2022
Ofrece 28 dBm de potencia de salida a P1dB, ganancia de 12 dB y eficiencia de potencia agregada del 55 % a 1 dB.
Qorvo pHEMT GaAs discreto de 800 µm QPD2080D
Qorvo pHEMT GaAs discreto de 800 µm QPD2080D
04/19/2022
Ofrece 29.5 dBm de potencia de salida a P1dB, ganancia de 11.5 dB y eficiencia de potencia agregada del 56 % a 1 dB.
Qorvo pHEMT GaAs discreto de 1200 µm QPD2120D
Qorvo pHEMT GaAs discreto de 1200 µm QPD2120D
04/19/2022
Ofrece 31 dBm de potencia de salida a P1dB, ganancia de 11.5 dB y eficiencia de potencia agregada del 57 % a 1 dB.
Qorvo pHEMT GaAs discreto de 1600 µm QPD2160D
Qorvo pHEMT GaAs discreto de 1600 µm QPD2160D
04/19/2022
Ofrece 32.5 dBm de potencia de salida a P1dB, ganancia de 10.4 dB y eficiencia de potencia agregada del 63 % a 1 dB.
Qorvo QPD2018D 180um Discrete GaAs pHEMT Die
Qorvo QPD2018D 180um Discrete GaAs pHEMT Die
02/14/2022
Utilizes Qorvo's proven standard 0.25um power pHEMT production process.
Qorvo QPD2025D 250um Discrete GaAs pHEMT Die
Qorvo QPD2025D 250um Discrete GaAs pHEMT Die
02/14/2022
Developed using Qorvo's proven standard 0.25um power pHEMT production process.
Qorvo QPD2040D 400um Discrete GaAs pHEMT Die
Qorvo QPD2040D 400um Discrete GaAs pHEMT Die
02/14/2022
Designed using Qorvo's proven standard 0.25um power pHEMT production process.
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Ampleon BLF981/BLF981S LDMOS Power Transistors
Ampleon BLF981/BLF981S LDMOS Power Transistors
05/15/2025
Designed for high-efficiency broadband applications across a frequency range from HF to 1400MHz.
Ampleon BLP981 LDMOS Power Transistor
Ampleon BLP981 LDMOS Power Transistor
05/15/2025
170W power transistor engineered for broadband applications spanning from HF up to 1400MHz.
Mini-Circuits TAV1 Transistors
Mini-Circuits TAV1 Transistors
12/01/2023
Designed with highly repeatable D-pHEMT and E-pHEMT technology in a small 1.4mm x 1.2mm package.
CEL Low Noise FETs & ICs
CEL Low Noise FETs & ICs
07/09/2023
Deliver exceptional noise performance even beyond 20GHz with high associated gains.
Nexperia SOT323 Surface-Mounted Package Products
Nexperia SOT323 Surface-Mounted Package Products
07/26/2022
A plastic, 3 leads, 1.3mm pitch, 2mm x 1.25mm x 0.95mm body surface-mounted package.
Nexperia SOT23 Surface-Mounted Package Products
Nexperia SOT23 Surface-Mounted Package Products
07/26/2022
Contained in a plastic, surface-mounted, three terminals, 1.9mm pitch, 2.9mm x 1.3mm x 1mm package.
Qorvo pHEMT GaAs discreto de 600 µm QPD2060D
Qorvo pHEMT GaAs discreto de 600 µm QPD2060D
04/19/2022
Ofrece 28 dBm de potencia de salida a P1dB, ganancia de 12 dB y eficiencia de potencia agregada del 55 % a 1 dB.
Qorvo pHEMT GaAs discreto de 1200 µm QPD2120D
Qorvo pHEMT GaAs discreto de 1200 µm QPD2120D
04/19/2022
Ofrece 31 dBm de potencia de salida a P1dB, ganancia de 11.5 dB y eficiencia de potencia agregada del 57 % a 1 dB.
Qorvo pHEMT GaAs discreto de 1600 µm QPD2160D
Qorvo pHEMT GaAs discreto de 1600 µm QPD2160D
04/19/2022
Ofrece 32.5 dBm de potencia de salida a P1dB, ganancia de 10.4 dB y eficiencia de potencia agregada del 63 % a 1 dB.
Qorvo pHEMT GaAs discreto de 800 µm QPD2080D
Qorvo pHEMT GaAs discreto de 800 µm QPD2080D
04/19/2022
Ofrece 29.5 dBm de potencia de salida a P1dB, ganancia de 11.5 dB y eficiencia de potencia agregada del 56 % a 1 dB.
Qorvo QPD2018D 180um Discrete GaAs pHEMT Die
Qorvo QPD2018D 180um Discrete GaAs pHEMT Die
02/14/2022
Utilizes Qorvo's proven standard 0.25um power pHEMT production process.
Qorvo QPD2025D 250um Discrete GaAs pHEMT Die
Qorvo QPD2025D 250um Discrete GaAs pHEMT Die
02/14/2022
Developed using Qorvo's proven standard 0.25um power pHEMT production process.
Qorvo QPD2040D 400um Discrete GaAs pHEMT Die
Qorvo QPD2040D 400um Discrete GaAs pHEMT Die
02/14/2022
Designed using Qorvo's proven standard 0.25um power pHEMT production process.
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