Tipos de Semiconductores discretos
Filtros aplicados:
Toshiba MOSFET N-Ch TPH2R70AR5
10/17/2025
10/17/2025
Ideal for high-efficiency DC-DC converters and is available in a SOP Advance (N) package.
Toshiba Diodos Zener automotrices XCEZ
08/29/2025
08/29/2025
Feature 150mW and 300mW power dissipation and are AEC-Q101 qualified.
Toshiba TRSx SiC Schottky Barrier Diodes
04/04/2025
04/04/2025
These SiC Schottky barrier diodes have a repetitive peak reverse voltage (VRRM) rating of 1200V.
Toshiba L-TOGL & S-TOGL AEC-Q 40V/80V/100V N-Ch MOSFETs
10/14/2024
10/14/2024
Housed in L-TOGL™ package to meet the growing demand for 48V batteries in automotive equipment.
Toshiba TKx Silicon N-Channel MOSFETs
09/13/2024
09/13/2024
Available in U-MOSX-H and DTMOSVI types and offers exceptional performance characteristics.
Toshiba TPH1400CQ5 Silicon N-Channel MOSFETs
09/10/2024
09/10/2024
Features an 8-pin SMT power MOSFET designed with a U-MOSX-H generation Trench process.
Toshiba TPH1100CQ5 Silicon N-Channel MOSFETs
08/12/2024
08/12/2024
Features an 8-pin SMT power MOSFET designed with a U-MOSX-H generation Trench process.
Toshiba UMOS9-H Silicon N-channel MOSFETs
05/13/2024
05/13/2024
Ideal for high-efficiency DC-to-DC converters, switching voltage regulators, and motor drivers.
Toshiba XCUZ Zener Diodes
01/23/2024
01/23/2024
Designed for automotive usage, features 600mW power dissipation and AEC-Q101 qualified.
Toshiba TRSx65H SiC Schottky Barrier Diodes
07/26/2023
07/26/2023
650V devices based on third-generation technology utilizing Schottky metal.
Toshiba SSM14N956L MOSFET
06/09/2023
06/09/2023
Features low source-source on-resistance and is RoHS compatible.
Toshiba XPQR3004PB 40V 400A Automotive MOSFET
02/13/2023
02/13/2023
Offers RDS(ON) of 0.23mΩ (typical) and threshold voltage (Vth) of 2V to 3V, capable of 400A.
Toshiba MOSFET de carburo de silicio de 3ra generación
07/11/2022
07/11/2022
Tecnología SiC para diseños de alta eficiencia y alta velocidad.
Toshiba TPH9R00CQH Silicon N-Channel MOSFET
03/23/2022
03/23/2022
Offers high-speed switching with a small output and gate charge in an SOP-8 package.
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Texas Instruments TVS2210 Flat-Clamp Surge Protection Device
03/12/2026
03/12/2026
Designed to robustly shunt up to 25A of fault current to protect from transients or lightning.
Micro Commercial Components (MCC) BAT46L2 Schottky Diode
03/12/2026
03/12/2026
150mW small-signal Schottky diode designed for high‑speed switching applications.
Diotec Semiconductor DI009N10PQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 9A continuous drain current at 25°C.
Diotec Semiconductor DI050N04BPT-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 40V and delivers 50A continuous drain current at 25°C.
Diotec Semiconductor DI045N10PT-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 45A continuous drain current at 25°C.
Diotec Semiconductor DI040N10D1-AQ N-Channel Power MOSFET
03/10/2026
03/10/2026
Supports a drain‑source voltage of 100V and delivers 40A continuous drain current at 25°C.
Littelfuse Diodo TVS discreto unidireccional SP1120-01WTG
03/09/2026
03/09/2026
Proprietary silicon avalanche technology and offers high ESD protection for electronic equipment.
Qorvo QPD2560L 300W GaN/SiC HEMT
03/09/2026
03/09/2026
Designed for demanding L‑Band applications, operating across the 1.0GHz to 1.5GHz frequency range.
Diotec Semiconductor BZX84B4V3-AQ Zener Diode
03/06/2026
03/06/2026
Features 4.3V nominal Zener voltage with ±2% tolerance and 3μA leakage current at 1V.
Diotec Semiconductor MM3Z3V0-AQ Zener Diode
03/06/2026
03/06/2026
Offers a 300mW power dissipation rating and comes in a compact SOD‑323F surface‑mount package.
Diotec Semiconductor MM5Z6V8B-AQ Zener Diode
03/06/2026
03/06/2026
Housed in an ultra‑small SOD‑523 surface‑mount package and AEC‑Q101 qualified.
Diotec Semiconductor TPSMA6L20A-AQ TVS Diode
03/06/2026
03/06/2026
AEC‑Q101 qualified unidirectional diode built in compact SMAF (DO‑221AC) low‑profile package.
Diotec Semiconductor MMS3Z18BGW-AQ Zener Diode
03/06/2026
03/06/2026
Housed in a compact SOD‑323 surface‑mount package, providing a 300mW power dissipation.
Diotec Semiconductor DIJ2A7N90 N-Channel Power MOSFET
03/06/2026
03/06/2026
Supports a drain‑source voltage of 900V and delivers 2.7A at 25°C continuous drain current.
Diotec Semiconductor SIT04C065 SiC Schottky Diode
03/06/2026
03/06/2026
Supports a 650V repetitive peak reverse voltage and delivers a 4A average forward rectified current.
Diotec Semiconductor BZX84B20-AQ Zener Diode
03/06/2026
03/06/2026
Features 20V nominal Zener voltage, 0.050µA leakage current, and 55Ω dynamic resistance.
Infineon Technologies N-Channel OptiMOS™ 7 80V Power MOSFETs
03/05/2026
03/05/2026
80V, N-channel, normal level devices with superior thermal resistance in a PG‑TDSON‑8 package.
EPC EPC2305 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Offers a low-inductance 3mm x 5mm QFN package with an exposed top for excellent thermal management.
EPC EPC2302 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Engineered for high-frequency DC-DC applications and 48V BLDC motor drives.
Littelfuse Matrices de diodos TVS Sx4340L
03/05/2026
03/05/2026
Offers 0.55pF ultra-low capacitance in a space-saving SOD882 package.
EPC EPC2304 Enhancement-Mode GaN Power Transistor
03/05/2026
03/05/2026
Handles tasks where ultra-high switching frequency and low on-time are advantageous.
Diotec Semiconductor SL1MR13 Standard Recovery Rectifier
03/03/2026
03/03/2026
Features 1000V repetitive peak reverse voltage and 1A maximum average forward rectified current.
Diotec Semiconductor SB1100 Schottky Diode
03/03/2026
03/03/2026
Offer low voltage forward drop making it suitable for output rectification and polarity protection.
Diotec Semiconductor GBI40M-T Single Phase Bridge Rectifier
03/03/2026
03/03/2026
Equipped with four diodes in a bridge configuration and protected against reverse assembly.
Diotec Semiconductor BAT54WT Schottky Diode
03/03/2026
03/03/2026
Designed for high-speed switching, low junction capacitance, and low leakage current.
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