El/los MOSFETs de SiC más reciente(s)
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Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs
12/19/2025
12/19/2025
Engineered to meet the stringent demands of electric vehicle (EV) applications.
onsemi NxT2023N065M3S EliteSiC MOSFETs
12/04/2025
12/04/2025
Feature low effective output capacitance and ultra-low gate charge.
Central Semiconductor MOSFET de carburo de silicio (SiC) de canal N de 1700 V
11/20/2025
11/20/2025
These MOSFETS are designed for high-speed switching and fast reverse recovery applications.
ROHM Semiconductor 750V N-Channel SiC MOSFETs
10/17/2025
10/17/2025
Devices boost switching frequency, decreasing the capacitors, reactors & other components required.
Infineon Technologies CoolSiC™ 1400V SiC G2 MOSFETs
10/09/2025
10/09/2025
Offers improved thermal performance, increased power density, and enhanced reliability.
Microchip Technology 1200V SIC MOSFETs
09/25/2025
09/25/2025
MOSFETs offer high efficiency in a lighter, more compact solution with fast switching speeds.
IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs
09/19/2025
09/19/2025
These devices have a high blocking voltage with low on-state resistance [RDS(ON)].
IXYS IXSJxN120R1K 1200V SiC Power MOSFETs
08/27/2025
08/27/2025
Up to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).
ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFET
08/21/2025
08/21/2025
A 1700V drain-source voltage (VDSS) and 3.9A continuous drain current (ID) rated SiC MOSFET.
onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFET
08/08/2025
08/08/2025
Delivers superior efficiency, fast switching, and robust thermal performance.
ROHM Semiconductor SCT40xKWA N-channel SiC power MOSFETs
07/14/2025
07/14/2025
Feature 1200V VDS, low on-resistance, fast switching speed, and fast recovery time.
Littelfuse MOSFET de potencia SiC de 1200 V IXSJxN120R1
06/23/2025
06/23/2025
High-performance devices designed for demanding power conversion applications.
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs
06/03/2025
06/03/2025
Automotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFET
05/22/2025
05/22/2025
Features a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.
APC-E Silicon Carbide (SiC) MOSFETs
05/06/2025
05/06/2025
Delivers high power, high frequency, and unmatched performance for demanding applications.
Wolfspeed 1700V Silicon Carbide MOSFETs
04/17/2025
04/17/2025
Offers higher switching, system efficiency, and power density for next-generation power conversion.
IXYS MOSFET SiC IXSA80N120L2-7
03/06/2025
03/06/2025
Single-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.
IXYS MOSFET SiC IXSA40N120L2-7
03/06/2025
03/06/2025
Single-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.
onsemi NVH4L050N170M1 Silicon Carbide (SiC) MOSFETs
02/20/2025
02/20/2025
Deliver exceptional performance with a typical RDS(on) of 53mΩ at VGS = 20V.
onsemi NTBL032N065M3S Silicon Carbide (SiC) MOSFETs
02/20/2025
02/20/2025
Designed for fast switching applications, offering reliable performance.
Central Semiconductor CDMS24783-120 N-Channel SiC MOSFET
02/18/2025
02/18/2025
Offers a 1200V drain-source voltage for high-speed switching and fast reverse recovery applications
IXYS MOSFET SiC IXSH40N120L2KHV
02/18/2025
02/18/2025
1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.
IXYS MOSFET SiC IXSH80N120L2KHV
02/18/2025
02/18/2025
1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.
SemiQ Dispositivos discretos MOSFET de SiC GEN3 de 1,200 V
01/02/2025
01/02/2025
Developed to increase performance and cut switching losses in high-voltage applications.
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs
09/06/2024
09/06/2024
Ideal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.
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