|
|
Diodos de protección contra ESD / Diodos TVS 600W 154V Unidirect
- SMBJ154A-TR
- STMicroelectronics
-
1:
$0.14
-
8,470En existencias
|
N.º de artículo de Mouser
511-SMBJ154A
|
STMicroelectronics
|
Diodos de protección contra ESD / Diodos TVS 600W 154V Unidirect
|
|
8,470En existencias
|
|
|
$0.14
|
|
|
$0.128
|
|
|
$0.126
|
|
|
$0.125
|
|
|
$0.119
|
|
|
Ver
|
|
|
$0.124
|
|
|
$0.115
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SMB (DO-214AA)
|
|
|
|
Diodos de protección contra ESD / Diodos TVS 3000 W, 28 V TVS in SMC
- SMC30J28A
- STMicroelectronics
-
1:
$1.16
-
2,456En existencias
|
N.º de artículo de Mouser
511-SMC30J28A
|
STMicroelectronics
|
Diodos de protección contra ESD / Diodos TVS 3000 W, 28 V TVS in SMC
|
|
2,456En existencias
|
|
|
$1.16
|
|
|
$0.942
|
|
|
$0.66
|
|
|
$0.659
|
|
|
Ver
|
|
|
$0.435
|
|
|
$0.533
|
|
|
$0.492
|
|
|
$0.435
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SMC (DO-214AB)
|
|
|
|
Diodos de protección contra ESD / Diodos TVS 3000 W, 48 V TVS in SMC
- SMC30J48CA
- STMicroelectronics
-
1:
$1.28
-
1,858En existencias
|
N.º de artículo de Mouser
511-SMC30J48CA
|
STMicroelectronics
|
Diodos de protección contra ESD / Diodos TVS 3000 W, 48 V TVS in SMC
|
|
1,858En existencias
|
|
|
$1.28
|
|
|
$1.02
|
|
|
$0.716
|
|
|
$0.59
|
|
|
$0.498
|
|
|
Ver
|
|
|
$0.482
|
|
|
$0.478
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SMC (DO-214AB)
|
|
|
|
Diodos de protección contra ESD / Diodos TVS 5000 W, 30 V TVS in SMC
- SMC50J30A
- STMicroelectronics
-
1:
$1.62
-
2,090En existencias
|
N.º de artículo de Mouser
511-SMC50J30A
|
STMicroelectronics
|
Diodos de protección contra ESD / Diodos TVS 5000 W, 30 V TVS in SMC
|
|
2,090En existencias
|
|
|
$1.62
|
|
|
$1.17
|
|
|
$0.825
|
|
|
$0.702
|
|
|
$0.566
|
|
|
Ver
|
|
|
$0.635
|
|
|
$0.527
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
SMC (DO-214AB)
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
- ST13007D
- STMicroelectronics
-
1:
$2.12
-
1,336En existencias
|
N.º de artículo de Mouser
511-ST13007D
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
|
|
1,336En existencias
|
|
|
$2.12
|
|
|
$0.747
|
|
|
$0.675
|
|
|
$0.64
|
|
|
Ver
|
|
|
$0.596
|
|
|
$0.59
|
|
|
$0.568
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
- STB10N60M2
- STMicroelectronics
-
1:
$2.43
-
1,075En existencias
|
N.º de artículo de Mouser
511-STB10N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
|
|
1,075En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.881
|
|
|
$0.785
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 35 Amp
- STB30NF10T4
- STMicroelectronics
-
1:
$2.02
-
1,412En existencias
|
N.º de artículo de Mouser
511-STB30NF10
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 35 Amp
|
|
1,412En existencias
|
|
|
$2.02
|
|
|
$1.29
|
|
|
$0.87
|
|
|
$0.692
|
|
|
$0.608
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a DPAK package
- STD18N60M6
- STMicroelectronics
-
1:
$2.23
-
1,632En existencias
|
N.º de artículo de Mouser
511-STD18N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a DPAK package
|
|
1,632En existencias
|
|
|
$2.23
|
|
|
$1.43
|
|
|
$0.982
|
|
|
$0.784
|
|
|
$0.70
|
|
|
$0.666
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 25 Amp
- STD20NF10T4
- STMicroelectronics
-
1:
$1.58
-
1,981En existencias
|
N.º de artículo de Mouser
511-STD20NF10
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 25 Amp
|
|
1,981En existencias
|
|
|
$1.58
|
|
|
$0.992
|
|
|
$0.658
|
|
|
$0.52
|
|
|
$0.469
|
|
|
$0.413
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
- STD3NM60N
- STMicroelectronics
-
1:
$1.76
-
2,222En existencias
|
N.º de artículo de Mouser
511-STD3NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
|
|
2,222En existencias
|
|
|
$1.76
|
|
|
$1.12
|
|
|
$0.746
|
|
|
$0.60
|
|
|
$0.542
|
|
|
$0.492
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
- STD6N60M2
- STMicroelectronics
-
1:
$1.99
-
2,265En existencias
|
N.º de artículo de Mouser
511-STD6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
|
|
2,265En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.862
|
|
|
$0.731
|
|
|
$0.634
|
|
|
$0.581
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2 mOhm typ., 80 A, STripFET H6 Power MOSFET in DPAK package
- STD80N3LL
- STMicroelectronics
-
1:
$1.32
-
2,977En existencias
|
N.º de artículo de Mouser
511-STD80N3LL
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2 mOhm typ., 80 A, STripFET H6 Power MOSFET in DPAK package
|
|
2,977En existencias
|
|
|
$1.32
|
|
|
$0.845
|
|
|
$0.56
|
|
|
$0.449
|
|
|
$0.397
|
|
|
$0.346
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
- STF26N60M2
- STMicroelectronics
-
1:
$3.41
-
981En existencias
|
N.º de artículo de Mouser
511-STF26N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
|
|
981En existencias
|
|
|
$3.41
|
|
|
$1.72
|
|
|
$1.55
|
|
|
$1.26
|
|
|
$1.25
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Módulos IGBT SLLIMM 2nd,3phs 600V shrt-crct
- STGIF10CH60TS-L
- STMicroelectronics
-
1:
$13.16
-
97En existencias
|
N.º de artículo de Mouser
511-STGIF10CH60TS-L
|
STMicroelectronics
|
Módulos IGBT SLLIMM 2nd,3phs 600V shrt-crct
|
|
97En existencias
|
|
|
$13.16
|
|
|
$8.88
|
|
|
$7.53
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
SDIP2F-26
|
|
|
|
IGBTs 20 A - 600 V - short circuit rugged IGBT
- STGP19NC60KD
- STMicroelectronics
-
1:
$3.20
-
997En existencias
|
N.º de artículo de Mouser
511-STGP19NC60KD
|
STMicroelectronics
|
IGBTs 20 A - 600 V - short circuit rugged IGBT
|
|
997En existencias
|
|
|
$3.20
|
|
|
$1.61
|
|
|
$1.45
|
|
|
$1.18
|
|
|
$1.15
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
IGBTs Trench gate field-stop 650 V, 80 A high speed HB series IGBT
- STGW80H65DFB-4
- STMicroelectronics
-
1:
$8.26
-
258En existencias
|
N.º de artículo de Mouser
511-STGW80H65DFB-4
|
STMicroelectronics
|
IGBTs Trench gate field-stop 650 V, 80 A high speed HB series IGBT
|
|
258En existencias
|
|
|
$8.26
|
|
|
$6.01
|
|
|
$5.01
|
|
|
$4.17
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
|
|
|
|
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
- STGWA50HP65FB2
- STMicroelectronics
-
1:
$3.62
-
662En existencias
|
N.º de artículo de Mouser
511-STGWA50HP65FB2
|
STMicroelectronics
|
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
|
|
662En existencias
|
|
|
$3.62
|
|
|
$1.98
|
|
|
$1.62
|
|
|
$1.42
|
|
|
$1.36
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss
- STGYA120M65DF2
- STMicroelectronics
-
1:
$10.04
-
380En existencias
|
N.º de artículo de Mouser
511-STGYA120M65DF2
|
STMicroelectronics
|
IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss
|
|
380En existencias
|
|
|
$10.04
|
|
|
$5.95
|
|
|
$5.29
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
Max247-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
- STI20N65M5
- STMicroelectronics
-
1:
$3.85
-
958En existencias
|
N.º de artículo de Mouser
511-STI20N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
|
|
958En existencias
|
|
|
$3.85
|
|
|
$2.09
|
|
|
$1.67
|
|
|
$1.47
|
|
|
$1.43
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-262-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
- STL13N60M6
- STMicroelectronics
-
1:
$2.61
-
2,800En existencias
|
N.º de artículo de Mouser
511-STL13N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
|
|
2,800En existencias
|
|
|
$2.61
|
|
|
$1.67
|
|
|
$1.14
|
|
|
$0.926
|
|
|
$0.835
|
|
|
$0.821
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.066Ohm 31A MDmesh M5
- STL36N55M5
- STMicroelectronics
-
1:
$5.73
-
2,984En existencias
|
N.º de artículo de Mouser
511-STL36N55M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.066Ohm 31A MDmesh M5
|
|
2,984En existencias
|
|
|
$5.73
|
|
|
$4.29
|
|
|
$3.11
|
|
|
$2.91
|
|
|
$2.91
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
- STL40N10F7
- STMicroelectronics
-
1:
$2.11
-
2,086En existencias
|
N.º de artículo de Mouser
511-STL40N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
|
|
2,086En existencias
|
|
|
$2.11
|
|
|
$1.35
|
|
|
$0.925
|
|
|
$0.737
|
|
|
$0.66
|
|
|
$0.628
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
- STP24N60DM2
- STMicroelectronics
-
1:
$3.98
-
855En existencias
|
N.º de artículo de Mouser
511-STP24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
|
|
855En existencias
|
|
|
$3.98
|
|
|
$2.03
|
|
|
$1.80
|
|
|
$1.54
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
- STP6N60M2
- STMicroelectronics
-
1:
$2.08
-
1,797En existencias
|
N.º de artículo de Mouser
511-STP6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
|
|
1,797En existencias
|
|
|
$2.08
|
|
|
$1.01
|
|
|
$0.796
|
|
|
$0.768
|
|
|
Ver
|
|
|
$0.652
|
|
|
$0.621
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-1ohm Zener SuperMESH 7.5A
- STP9NK70ZFP
- STMicroelectronics
-
1:
$4.25
-
488En existencias
|
N.º de artículo de Mouser
511-STP9NK70ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 700V-1ohm Zener SuperMESH 7.5A
|
|
488En existencias
|
|
|
$4.25
|
|
|
$2.23
|
|
|
$1.94
|
|
|
$1.66
|
|
|
$1.64
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|