|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 420 mOhm typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package
- STF12N65M2
- STMicroelectronics
-
1:
$2.34
-
1,131En existencias
|
N.º de artículo de Mouser
511-STF12N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 420 mOhm typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package
|
|
1,131En existencias
|
|
|
$2.34
|
|
|
$1.23
|
|
|
$1.02
|
|
|
$0.848
|
|
|
Ver
|
|
|
$0.738
|
|
|
$0.735
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 0.68 Ohm 10A SuperMESH3
- STF13N95K3
- STMicroelectronics
-
1:
$7.27
-
966En existencias
|
N.º de artículo de Mouser
511-STF13N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 0.68 Ohm 10A SuperMESH3
|
|
966En existencias
|
|
|
$7.27
|
|
|
$4.08
|
|
|
$3.75
|
|
|
$3.45
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 1.90 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package
- STF4N90K5
- STMicroelectronics
-
1:
$2.42
-
1,365En existencias
|
N.º de artículo de Mouser
511-STF4N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 1.90 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package
|
|
1,365En existencias
|
|
|
$2.42
|
|
|
$1.23
|
|
|
$1.06
|
|
|
$0.901
|
|
|
Ver
|
|
|
$0.83
|
|
|
$0.76
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra
- STFU18N65M2
- STMicroelectronics
-
1:
$3.14
-
978En existencias
|
N.º de artículo de Mouser
511-STFU18N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra
|
|
978En existencias
|
|
|
$3.14
|
|
|
$1.57
|
|
|
$1.42
|
|
|
$1.15
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package
- STFW40N60M2
- STMicroelectronics
-
1:
$5.78
-
445En existencias
|
N.º de artículo de Mouser
511-STFW40N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-3PF package
|
|
445En existencias
|
|
|
$5.78
|
|
|
$3.68
|
|
|
$3.07
|
|
|
$2.94
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-3PF-3
|
|
|
|
IGBTs N-channel MOSFET
- STGB10NC60KDT4
- STMicroelectronics
-
1:
$1.99
-
2,433En existencias
-
1,000Se espera el 8/6/2026
|
N.º de artículo de Mouser
511-STGB10NC60KDT4
|
STMicroelectronics
|
IGBTs N-channel MOSFET
|
|
2,433En existencias
1,000Se espera el 8/6/2026
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.858
|
|
|
$0.681
|
|
|
$0.624
|
|
|
$0.597
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
D2PAK-3
|
|
|
|
IGBTs N Ch 100V 0.033 Ohm 25A Pwr MOSFET
- STGB8NC60KDT4
- STMicroelectronics
-
1:
$2.06
-
1,860En existencias
|
N.º de artículo de Mouser
511-STGB8NC60KDT4
|
STMicroelectronics
|
IGBTs N Ch 100V 0.033 Ohm 25A Pwr MOSFET
|
|
1,860En existencias
|
|
|
$2.06
|
|
|
$1.31
|
|
|
$0.871
|
|
|
$0.714
|
|
|
$0.613
|
|
|
$0.567
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
D2PAK-3
|
|
|
|
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss
- STGD4M65DF2
- STMicroelectronics
-
1:
$1.52
-
2,128En existencias
|
N.º de artículo de Mouser
511-STGD4M65DF2
|
STMicroelectronics
|
IGBTs Trench gate field-stop IGBT, M series 650 V, 4 A low loss
|
|
2,128En existencias
|
|
|
$1.52
|
|
|
$0.958
|
|
|
$0.636
|
|
|
$0.502
|
|
|
$0.453
|
|
|
$0.399
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
|
|
|
IGBTs PowerMESH" IGBT
- STGP14NC60KD
- STMicroelectronics
-
1:
$2.02
-
2,050En existencias
|
N.º de artículo de Mouser
511-STGP14NC60KD
|
STMicroelectronics
|
IGBTs PowerMESH" IGBT
|
|
2,050En existencias
|
|
|
$2.02
|
|
|
$0.931
|
|
|
$0.741
|
|
|
$0.641
|
|
|
$0.61
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 3.9 mOhm 180A STripFET
- STH180N10F3-2
- STMicroelectronics
-
1:
$5.32
-
1,072En existencias
|
N.º de artículo de Mouser
511-STH180N10F3-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 3.9 mOhm 180A STripFET
|
|
1,072En existencias
|
|
|
$5.32
|
|
|
$3.55
|
|
|
$2.54
|
|
|
$2.44
|
|
|
$2.28
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
H2PAK-2
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 80 V, 3.6 mOhm typ., 120 A, STripFET F7 Power MOSFET in a P
- STL125N8F7AG
- STMicroelectronics
-
1:
$3.16
-
2,955En existencias
|
N.º de artículo de Mouser
511-STL125N8F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 80 V, 3.6 mOhm typ., 120 A, STripFET F7 Power MOSFET in a P
|
|
2,955En existencias
|
|
|
$3.16
|
|
|
$2.05
|
|
|
$1.47
|
|
|
$1.23
|
|
|
$1.11
|
|
|
$1.11
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
- STL16N65M2
- STMicroelectronics
-
1:
$3.01
-
1,440En existencias
|
N.º de artículo de Mouser
511-STL16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
|
|
1,440En existencias
|
|
|
$3.01
|
|
|
$1.95
|
|
|
$1.36
|
|
|
$1.14
|
|
|
$1.04
|
|
|
$1.04
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-HV-8
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 72 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 H
- STL52N60DM6
- STMicroelectronics
-
1:
$6.17
-
1,501En existencias
|
N.º de artículo de Mouser
511-STL52N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 72 mOhm typ., 45 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 H
|
|
1,501En existencias
|
|
|
$6.17
|
|
|
$4.72
|
|
|
$3.82
|
|
|
$3.40
|
|
|
$3.00
|
|
|
$3.00
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.56Ohm 7.5A MDmesh M2
- STP10N60M2
- STMicroelectronics
-
1:
$2.01
-
1,799En existencias
|
N.º de artículo de Mouser
511-STP10N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.56Ohm 7.5A MDmesh M2
|
|
1,799En existencias
|
|
|
$2.01
|
|
|
$0.976
|
|
|
$0.873
|
|
|
$0.699
|
|
|
Ver
|
|
|
$0.627
|
|
|
$0.598
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-220 package
- STP24N60M6
- STMicroelectronics
-
1:
$3.20
-
792En existencias
|
N.º de artículo de Mouser
511-STP24N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
792En existencias
|
|
|
$3.20
|
|
|
$1.60
|
|
|
$1.45
|
|
|
$1.17
|
|
|
$1.15
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-220 package
- STP50N65DM6
- STMicroelectronics
-
1:
$7.85
-
773En existencias
|
N.º de artículo de Mouser
511-STP50N65DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-220 package
|
|
773En existencias
|
|
|
$7.85
|
|
|
$5.54
|
|
|
$4.62
|
|
|
$4.12
|
|
|
$3.84
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 7.2 Amp
- STP7N95K3
- STMicroelectronics
-
1:
$4.04
-
934En existencias
|
N.º de artículo de Mouser
511-STP7N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 7.2 Amp
|
|
934En existencias
|
|
|
$4.04
|
|
|
$2.11
|
|
|
$1.78
|
|
|
$1.65
|
|
|
$1.54
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Rectificadores y diodos Schottky 2X5 Amp 60 Volt
- STPS10L60CFP
- STMicroelectronics
-
1:
$1.43
-
1,962En existencias
|
N.º de artículo de Mouser
511-STPS10L60CFP
|
STMicroelectronics
|
Rectificadores y diodos Schottky 2X5 Amp 60 Volt
|
|
1,962En existencias
|
|
|
$1.43
|
|
|
$0.598
|
|
|
$0.597
|
|
|
$0.468
|
|
|
Ver
|
|
|
$0.425
|
|
|
$0.376
|
|
Min.: 1
Mult.: 1
|
|
Schottky Diodes & Rectifiers
|
Si
|
Through Hole
|
TO-220FP-3
|
|
|
|
Rectificadores y diodos Schottky 1.0 Amp 60 Volt
- STPS160A
- STMicroelectronics
-
1:
$0.35
-
16,929En existencias
|
N.º de artículo de Mouser
511-STPS160A
|
STMicroelectronics
|
Rectificadores y diodos Schottky 1.0 Amp 60 Volt
|
|
16,929En existencias
|
|
|
$0.35
|
|
|
$0.164
|
|
|
$0.16
|
|
|
$0.126
|
|
|
Ver
|
|
|
$0.072
|
|
|
$0.101
|
|
|
$0.072
|
|
|
$0.072
|
|
Min.: 1
Mult.: 1
|
|
Schottky Diodes & Rectifiers
|
Si
|
SMD/SMT
|
SMA (DO-214AC)
|
|
|
|
Rectificadores y diodos Schottky 20A 100V
- STPS20M100ST
- STMicroelectronics
-
1:
$3.17
-
806En existencias
|
N.º de artículo de Mouser
511-STPS20M100ST
|
STMicroelectronics
|
Rectificadores y diodos Schottky 20A 100V
|
|
806En existencias
|
|
Min.: 1
Mult.: 1
|
|
Schottky Diodes & Rectifiers
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
Diodos Schottky de SiC Automotive 650 V, 8 A Silicon Carbide Diode
- STPSC8H065BY-TR
- STMicroelectronics
-
1:
$3.54
-
2,480En existencias
|
N.º de artículo de Mouser
511-STPSC8H065BY-TR
|
STMicroelectronics
|
Diodos Schottky de SiC Automotive 650 V, 8 A Silicon Carbide Diode
|
|
2,480En existencias
|
|
|
$3.54
|
|
|
$2.31
|
|
|
$1.80
|
|
|
$1.52
|
|
|
$1.32
|
|
|
$1.32
|
|
Min.: 1
Mult.: 1
|
|
SiC Schottky Diodes
|
|
SMD/SMT
|
DPAK
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel 40 V, 0.0125 Ohm typ., 10 A STripFET F6 Power MOSFET in a SO-8 package
- STS10P4LLF6
- STMicroelectronics
-
1:
$1.64
-
3,100En existencias
|
N.º de artículo de Mouser
511-STS10P4LLF6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel 40 V, 0.0125 Ohm typ., 10 A STripFET F6 Power MOSFET in a SO-8 package
|
|
3,100En existencias
|
|
|
$1.64
|
|
|
$1.04
|
|
|
$0.696
|
|
|
$0.548
|
|
|
$0.50
|
|
|
$0.457
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
SOIC-8
|
|
|
|
Rectificadores High Effecientcy Rectifier
- STTH10R04G-TR
- STMicroelectronics
-
1:
$0.53
-
3,757En existencias
|
N.º de artículo de Mouser
511-STTH10R04G-TR
|
STMicroelectronics
|
Rectificadores High Effecientcy Rectifier
|
|
3,757En existencias
|
|
|
$0.53
|
|
|
$0.462
|
|
|
$0.431
|
|
|
$0.367
|
|
Min.: 1
Mult.: 1
|
|
Rectifiers
|
|
SMD/SMT
|
D2-PAK
|
|
|
|
Diodos de Conmutación de Señal Baja 600V, 30A, Ultrafast diode
- STTH30M06SPF
- STMicroelectronics
-
1:
$3.24
-
1,108En existencias
|
N.º de artículo de Mouser
511-STTH30M06SPF
|
STMicroelectronics
|
Diodos de Conmutación de Señal Baja 600V, 30A, Ultrafast diode
|
|
1,108En existencias
|
|
|
$3.24
|
|
|
$1.40
|
|
|
$1.38
|
|
|
$1.23
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
|
|
Diodes - General Purpose, Power, Switching
|
|
Through Hole
|
|
|
|
|
Rectificadores high voltage diode
- STTH512B-TR
- STMicroelectronics
-
1:
$0.76
-
5,888En existencias
|
N.º de artículo de Mouser
511-STTH512B-TR
|
STMicroelectronics
|
Rectificadores high voltage diode
|
|
5,888En existencias
|
|
|
$0.76
|
|
|
$0.535
|
|
|
$0.409
|
|
|
$0.316
|
|
|
$0.286
|
|
|
$0.231
|
|
Min.: 1
Mult.: 1
|
|
Rectifiers
|
|
SMD/SMT
|
DPAK
|
|