|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i
- STW45N60DM2AG
- STMicroelectronics
-
1:
$7.33
-
482En existencias
|
N.º de artículo de Mouser
511-STW45N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET i
|
|
482En existencias
|
|
|
$7.33
|
|
|
$4.75
|
|
|
$3.97
|
|
|
$3.59
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
93 mOhms
|
- 25 V, 25 V
|
4 V
|
56 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 0.070 Ohm typ., 38 A MDmesh DM2 Power MOSFET i
- STW50N65DM2AG
- STMicroelectronics
-
1:
$7.33
-
660En existencias
|
N.º de artículo de Mouser
511-STW50N65DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 0.070 Ohm typ., 38 A MDmesh DM2 Power MOSFET i
|
|
660En existencias
|
|
|
$7.33
|
|
|
$4.23
|
|
|
$3.55
|
|
|
$3.51
|
|
|
$3.50
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
38 A
|
87 mOhms
|
- 25 V, 25 V
|
4 V
|
70 nC
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 300 Volt 60 Amp Zener SuperMESH3
- STY60NK30Z
- STMicroelectronics
-
1:
$13.47
-
483En existencias
|
N.º de artículo de Mouser
511-STY60NK30Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 300 Volt 60 Amp Zener SuperMESH3
|
|
483En existencias
|
|
|
$13.47
|
|
|
$8.18
|
|
|
$7.76
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
Max247-3
|
N-Channel
|
1 Channel
|
300 V
|
60 A
|
45 mOhms
|
- 30 V, 30 V
|
4.5 V
|
220 nC
|
- 55 C
|
+ 150 C
|
450 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in D2PAK package
- STB28N60M2
- STMicroelectronics
-
1:
$2.60
-
1,882En existencias
|
N.º de artículo de Mouser
511-STB28N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in D2PAK package
|
|
1,882En existencias
|
|
|
$2.60
|
|
|
$1.68
|
|
|
$1.16
|
|
|
$0.931
|
|
|
$0.869
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
150 mOhms
|
- 25 V, 25 V
|
3 V
|
36 nC
|
- 55 C
|
+ 150 C
|
170 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in
- STB30N65DM6AG
- STMicroelectronics
-
1:
$6.89
-
816En existencias
|
N.º de artículo de Mouser
511-STB30N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 102 mOhm typ., 28 A MDmesh DM6 Power MOSFET in
|
|
816En existencias
|
|
|
$6.89
|
|
|
$4.83
|
|
|
$3.61
|
|
|
$3.21
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
18 A
|
115 mOhms
|
- 25 V, 25 V
|
4.75 V
|
46 nC
|
- 55 C
|
+ 150 C
|
223 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in
- STB47N60DM6AG
- STMicroelectronics
-
1:
$7.48
-
998En existencias
|
N.º de artículo de Mouser
511-STB47N60DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in
|
|
998En existencias
|
|
|
$7.48
|
|
|
$5.09
|
|
|
$3.86
|
|
|
$3.55
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
36 A
|
80 mOhms
|
- 25 V, 25 V
|
3 V
|
55 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch 60V 0.15Ohm 10A STripFET VI DeepGat
- STD10P6F6
- STMicroelectronics
-
1:
$1.38
-
12,287En existencias
|
N.º de artículo de Mouser
511-STD10P6F6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch 60V 0.15Ohm 10A STripFET VI DeepGat
|
|
12,287En existencias
|
|
|
$1.38
|
|
|
$0.863
|
|
|
$0.571
|
|
|
$0.45
|
|
|
$0.406
|
|
|
$0.353
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
60 V
|
10 A
|
160 mOhms
|
- 20 V, 20 V
|
2 V
|
6.4 nC
|
- 55 C
|
+ 175 C
|
35 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.198 Ohm 15 A MDmesh M5
- STD18N65M5
- STMicroelectronics
-
1:
$3.48
-
1,367En existencias
|
N.º de artículo de Mouser
511-STD18N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.198 Ohm 15 A MDmesh M5
|
|
1,367En existencias
|
|
|
$3.48
|
|
|
$2.27
|
|
|
$1.59
|
|
|
$1.38
|
|
|
$1.32
|
|
|
$1.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
15 A
|
198 mOhms
|
- 25 V, 25 V
|
3 V
|
31 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
- STD3NK80Z-1
- STMicroelectronics
-
1:
$2.66
-
3,422En existencias
|
N.º de artículo de Mouser
511-STD3NK80Z-1
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A
|
|
3,422En existencias
|
|
|
$2.66
|
|
|
$1.26
|
|
|
$1.11
|
|
|
$0.96
|
|
|
$0.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
2.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
4.5 V
|
19 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 4 Amp Zener SuperMESH
- STD4NK60ZT4
- STMicroelectronics
-
1:
$2.22
-
2,390En existencias
|
N.º de artículo de Mouser
511-STD4NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 4 Amp Zener SuperMESH
|
|
2,390En existencias
|
|
|
$2.22
|
|
|
$1.43
|
|
|
$0.966
|
|
|
$0.771
|
|
|
$0.729
|
|
|
$0.693
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
4 A
|
2 Ohms
|
- 30 V, 30 V
|
3 V
|
26 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 2Ohm typ 3.5A Zener-protected
- STD5N95K5
- STMicroelectronics
-
1:
$2.40
-
4,380En existencias
|
N.º de artículo de Mouser
511-STD5N95K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 2Ohm typ 3.5A Zener-protected
|
|
4,380En existencias
|
|
|
$2.40
|
|
|
$1.54
|
|
|
$1.06
|
|
|
$0.842
|
|
|
$0.802
|
|
|
$0.77
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
3.5 A
|
2 Ohms
|
- 30 V, 30 V
|
4 V
|
12.5 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220FP package
- STF10N105K5
- STMicroelectronics
-
1:
$3.59
-
1,080En existencias
|
N.º de artículo de Mouser
511-STF10N105K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-220FP package
|
|
1,080En existencias
|
|
|
$3.59
|
|
|
$2.08
|
|
|
$1.74
|
|
|
$1.44
|
|
|
$1.33
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
1.05 kV
|
6 A
|
1 Ohms
|
- 30 V, 30 V
|
3 V
|
21.5 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.162 Ohm 17A MDmesh II PWR
- STF23NM50N
- STMicroelectronics
-
1:
$5.01
-
930En existencias
|
N.º de artículo de Mouser
511-STF23NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.162 Ohm 17A MDmesh II PWR
|
|
930En existencias
|
|
|
$5.01
|
|
|
$3.35
|
|
|
$2.95
|
|
|
$2.60
|
|
|
$2.55
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
17 A
|
190 mOhms
|
- 25 V, 25 V
|
2 V
|
45 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 V 2.1 mOhm 180 A STripFET
- STH310N10F7-6
- STMicroelectronics
-
1:
$5.86
-
1,254En existencias
|
N.º de artículo de Mouser
511-STH310N10F7-6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 V 2.1 mOhm 180 A STripFET
|
|
1,254En existencias
|
|
|
$5.86
|
|
|
$4.39
|
|
|
$3.20
|
|
|
$2.99
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2.5 V
|
180 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 80 V, 5.6 mOhm typ., 95 A, STripFET F7 Power MOSFET in a Po
- STL105N8F7AG
- STMicroelectronics
-
1:
$2.59
-
1,873En existencias
|
N.º de artículo de Mouser
511-STL105N8F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 80 V, 5.6 mOhm typ., 95 A, STripFET F7 Power MOSFET in a Po
|
|
1,873En existencias
|
|
|
$2.59
|
|
|
$1.67
|
|
|
$1.15
|
|
|
$0.918
|
|
|
$0.869
|
|
|
$0.854
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8
|
N-Channel
|
1 Channel
|
80 V
|
95 A
|
6.5 mOhms
|
- 20 V, 20 V
|
4.5 V
|
46 nC
|
- 55 C
|
+ 175 C
|
127 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6
- STL13N60DM2
- STMicroelectronics
-
1:
$2.78
-
3,225En existencias
|
N.º de artículo de Mouser
511-STL13N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.350 Ohm typ., 8 A MDmesh DM2 Power MOSFET in a PowerFLAT 5x6
|
|
3,225En existencias
|
|
|
$2.78
|
|
|
$1.80
|
|
|
$1.24
|
|
|
$1.02
|
|
|
$0.932
|
|
|
$0.932
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
350 mOhms
|
- 25 V, 25 V
|
3 V
|
19 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 70 mOhm typ., 31 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV
- STL47N60M6
- STMicroelectronics
-
1:
$5.62
-
1,983En existencias
|
N.º de artículo de Mouser
511-STL47N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 70 mOhm typ., 31 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV
|
|
1,983En existencias
|
|
|
$5.62
|
|
|
$4.24
|
|
|
$3.07
|
|
|
$3.06
|
|
|
$2.86
|
|
|
$2.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
80 mOhms
|
- 25 V, 25 V
|
3.25 V
|
57 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 18A Mosfet PowerFLAT STripFET V
- STL70N4LLF5
- STMicroelectronics
-
1:
$1.94
-
4,461En existencias
|
N.º de artículo de Mouser
511-STL70N4LLF5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 18A Mosfet PowerFLAT STripFET V
|
|
4,461En existencias
|
|
|
$1.94
|
|
|
$1.24
|
|
|
$0.837
|
|
|
$0.664
|
|
|
$0.608
|
|
|
$0.578
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
18 A
|
6.1 mOhms
|
- 22 V, 22 V
|
1 V
|
13 nC
|
- 55 C
|
+ 175 C
|
72 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3
- STL7N10F7
- STMicroelectronics
-
1:
$1.52
-
4,033En existencias
|
N.º de artículo de Mouser
511-STL7N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.027 Ohm typ., 7 A STripFET F7 Power MOSFET in a PowerFLAT 3.3
|
|
4,033En existencias
|
|
|
$1.52
|
|
|
$0.96
|
|
|
$0.639
|
|
|
$0.502
|
|
|
$0.457
|
|
|
$0.41
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
100 V
|
7 A
|
35 mOhms
|
- 20 V, 20 V
|
4.5 V
|
14 nC
|
- 55 C
|
+ 150 C
|
2.9 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
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|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 10.5A Zener SuperMESH
- STP12NK80Z
- STMicroelectronics
-
1:
$4.71
-
1,269En existencias
|
N.º de artículo de Mouser
511-STP12NK80Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 10.5A Zener SuperMESH
|
|
1,269En existencias
|
|
|
$4.71
|
|
|
$2.44
|
|
|
$2.22
|
|
|
$1.93
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
10.5 A
|
750 mOhms
|
- 30 V, 30 V
|
|
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
- STP140N6F7
- STMicroelectronics
-
1:
$2.71
-
6,632En existencias
|
N.º de artículo de Mouser
511-STP140N6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
|
|
6,632En existencias
|
|
|
$2.71
|
|
|
$1.34
|
|
|
$1.15
|
|
|
$0.968
|
|
|
$0.909
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
80 A
|
3 mOhms
|
- 20 V, 20 V
|
2 V
|
40 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
|
STripFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.18 Ohm 13A Mdmesh M5
- STP18N55M5
- STMicroelectronics
-
1:
$3.67
-
2,190En existencias
|
N.º de artículo de Mouser
511-STP18N55M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.18 Ohm 13A Mdmesh M5
|
|
2,190En existencias
|
|
|
$3.67
|
|
|
$1.91
|
|
|
$1.67
|
|
|
$1.42
|
|
|
$1.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
550 V
|
13 A
|
240 mOhms
|
- 25 V, 25 V
|
3 V
|
31 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
- STP25N80K5
- STMicroelectronics
-
1:
$5.09
-
728En existencias
|
N.º de artículo de Mouser
511-STP25N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5
|
|
728En existencias
|
|
|
$5.09
|
|
|
$2.88
|
|
|
$2.62
|
|
|
$2.37
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
19.5 A
|
260 mOhms
|
- 30 V, 30 V
|
4 V
|
40 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0 120 Ohm typ 24 A
- STP28NM60ND
- STMicroelectronics
-
1:
$5.97
-
990En existencias
|
N.º de artículo de Mouser
511-STP28NM60ND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0 120 Ohm typ 24 A
|
|
990En existencias
|
|
|
$5.97
|
|
|
$3.51
|
|
|
$3.12
|
|
|
$2.83
|
|
|
$2.66
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
23 A
|
150 mOhms
|
- 25 V, 25 V
|
4 V
|
62.5 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
- STP36N60M6
- STMicroelectronics
-
1:
$5.75
-
966En existencias
|
N.º de artículo de Mouser
511-STP36N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
966En existencias
|
|
|
$5.75
|
|
|
$3.42
|
|
|
$2.97
|
|
|
$2.93
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
85 mOhms
|
- 25 V, 25 V
|
3.25 V
|
44.3 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|