CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage VGS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

Resultados: 45
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Estilo de montaje Paquete / Cubierta Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Nombre comercial
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 188En existencias
$18.20
$10.64
Min.: 1
Mult.: 1
Through Hole PG-TO-247-4 1 Channel 1.2 kV 80 A 23 mOhms - 10 V, + 25 V 5.1 V 73 nC - 40 C + 175 C 356 W Enhancement
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 215En existencias
$13.09
$7.26
$6.94
Min.: 1
Mult.: 1
Through Hole PG-TO-247-4 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 171 W Enhancement
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode 172En existencias
$12.84
$7.11
$6.77
Min.: 1
Mult.: 1
Through Hole PG-TO-247-4 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 250 W Enhancement
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology 5En existencias
960En pedido
$41.44
$30.81
$29.39
Min.: 1
Mult.: 1
Through Hole PG-TO247-4-U07 1 Channel 1.2 kV 201 A 20 mOhms - 10 V, + 25 V 5.1 V 176 nC - 55 C + 175 C 711 W CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling 1,616En existencias
3,750En pedido
Cinta cortada
$42.36
$34.57
$30.54
$28.92
Envase tipo carrete
$28.92
Min.: 1
Mult.: 1
: 750
SMD/SMT PG-HDSOP-22 1.2 kV 257 A 7.5 mOhms 4.2 V + 175 C - 55 C 1.172 kW CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling 1,453En existencias
Cinta cortada
$20.38
$13.04
$12.30
$11.64
Envase tipo carrete
$11.64
Min.: 1
Mult.: 1
: 750
CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 556En existencias
Cinta cortada
$43.31
$33.62
$31.83
Envase tipo carrete
$31.83
Min.: 1
Mult.: 1
: 750
1.2 kV
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling 273En existencias
3,000Se espera el 19/11/2026
Cinta cortada
$32.48
$25.55
$22.49
$20.44
Envase tipo carrete
$19.88
Min.: 1
Mult.: 1
: 750
CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 1,740En existencias
Cinta cortada
$14.32
$8.24
$8.08
Envase tipo carrete
$7.80
Min.: 1
Mult.: 1
: 750
SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 82 A 67 mOhms - 10 V, + 25 V 5.1 V 63.4 nC - 55 C + 175 C 405 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 742En existencias
750En pedido
Cinta cortada
$12.04
$8.00
$7.26
$6.29
Envase tipo carrete
$6.12
Min.: 1
Mult.: 1
: 750
SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 64 A 89 mOhms - 10 V, + 25 C 5.1 V 48.7 nC - 55 C + 175 C 326 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 941En existencias
Cinta cortada
$11.27
$6.29
$6.04
$5.71
Envase tipo carrete
$5.71
Min.: 1
Mult.: 1
: 750
SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 56 A 104 mOhms - 10 V, + 25 V 5.1 V 42.4 nC - 55 C + 175 C 288 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 2,299En existencias
Cinta cortada
$8.58
$4.77
$4.38
$4.03
Envase tipo carrete
$3.81
Min.: 1
Mult.: 1
: 750
SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 31 A 205 mOhms - 10 V, + 25 V 5.1 V 23.2 nC - 55 C + 175 C 176 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 692En existencias
Cinta cortada
$23.88
$15.91
$15.06
Envase tipo carrete
$15.06
Min.: 1
Mult.: 1
: 750
1.2 kV
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 470En existencias
Cinta cortada
$18.92
$11.82
$11.18
Envase tipo carrete
$11.18
Min.: 1
Mult.: 1
: 750
1.2 kV
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 277En existencias
$17.24
$9.92
Min.: 1
Mult.: 1
Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 80 A 29 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 1,440En existencias
$10.61
$5.82
$5.38
$5.26
$4.98
Min.: 1
Mult.: 1
Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 38 A 69 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC MOSFET discrete 1200V, 17 mohm G2 161En existencias
720En pedido
$20.88
$15.08
$13.10
$12.51
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC MOSFET discrete 1200V, 22 mohm G2 1,335En existencias
$18.53
$12.76
$11.02
$10.27
$9.79
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC MOSFET discrete 1200V, 34 mohm G2 683En existencias
240Se espera el 19/10/2026
$12.54
$6.93
$6.56
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC MOSFET discrete 1200V, 53 mohm G2 632En existencias
$10.16
$5.49
$5.07
$5.06
$4.98
Min.: 1
Mult.: 1
Through Hole TO-247-4 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC MOSFET 1200 V G2 in TO-263-7 package 740En existencias
2,000En pedido
Cinta cortada
$36.41
$27.08
$27.07
$25.85
Envase tipo carrete
$25.65
Min.: 1
Mult.: 1
: 1,000
SMD/SMT TO-263-7 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies MOSFETs de SiC CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package 316En existencias
750Se espera el 5/11/2026
Cinta cortada
$9.46
$5.19
$4.80
$4.53
Envase tipo carrete
$4.53
Min.: 1
Mult.: 1
: 750
SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 43 A 138 mOhms - 10 V, + 25 V 5.1 V 32.8 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 24En existencias
480En pedido
$20.10
$11.93
Min.: 1
Mult.: 1
Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 97 A 23 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 132En existencias
240Se espera el 29/10/2026
$14.94
$8.41
$8.25
Min.: 1
Mult.: 1
Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 69 A 34 mOhms - 10 V, + 25 V 5.1 V 60 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC 1200 V SiC MOSFET G2 78En existencias
240Se espera el 29/10/2026
$12.54
$6.93
$6.56
Min.: 1
Mult.: 1
Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 55 A 45 mOhms - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC