|
|
MOSFETs de SiC SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
$23.32
-
736En existencias
-
NRND
|
N.º de artículo de Mouser
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC SIC_DISCRETE
|
|
736En existencias
|
|
|
$23.32
|
|
|
$18.72
|
|
|
$16.62
|
|
|
$16.10
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
52 A
|
59 mOhms
|
- 7 V, + 20 V
|
5.7 V
|
57 nC
|
- 55 C
|
+ 175 C
|
228 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
$5.87
-
10,930En pedido
|
N.º de artículo de Mouser
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
10,930En pedido
En pedido:
6,930 Se espera el 28/7/2026
4,000 Se espera el 7/1/2027
Plazo de entrega de fábrica:
53 Semanas
|
|
|
$5.87
|
|
|
$3.70
|
|
|
$2.77
|
|
|
$2.36
|
|
|
$2.20
|
|
|
$2.11
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
$8.15
-
305En existencias
-
NRND
|
N.º de artículo de Mouser
726-IMW120R140M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
305En existencias
|
|
|
$8.15
|
|
|
$5.32
|
|
|
$4.37
|
|
|
$3.83
|
|
|
$3.62
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
$16.22
-
1,224En existencias
-
NRND
|
N.º de artículo de Mouser
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
1,224En existencias
|
|
|
$16.22
|
|
|
$12.36
|
|
|
$10.30
|
|
|
$9.17
|
|
|
$8.68
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
$11.13
-
40En existencias
-
240Se espera el 7/8/2026
-
NRND
|
N.º de artículo de Mouser
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
40En existencias
240Se espera el 7/8/2026
|
|
|
$11.13
|
|
|
$7.87
|
|
|
$6.56
|
|
|
$5.83
|
|
|
$5.53
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
$18.42
-
2,160En pedido
-
NRND
|
N.º de artículo de Mouser
726-IMZ120R030M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
2,160En pedido
En pedido:
720 Se espera el 17/9/2026
Plazo de entrega de fábrica:
45 Semanas
|
|
|
$18.42
|
|
|
$12.18
|
|
|
$10.52
|
|
|
$10.23
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMZA65R072M1HXKSA1
- Infineon Technologies
-
1:
$9.49
-
Plazo de entrega no en existencias 52 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IMZA65R072M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
Plazo de entrega no en existencias 52 Semanas
|
|
|
$9.49
|
|
|
$6.68
|
|
|
$4.90
|
|
|
$4.30
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
