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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 40V 280A 2.3mOhm 160nC Qg
- IRF2804PBF
- Infineon Technologies
-
1:
$2.63
-
3,497En existencias
|
N.º de artículo de Mouser
942-IRF2804PBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 40V 280A 2.3mOhm 160nC Qg
|
|
3,497En existencias
|
|
|
$2.63
|
|
|
$1.29
|
|
|
$1.15
|
|
|
$0.807
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
40 V
|
280 A
|
2 mOhms
|
- 20 V, 20 V
|
2 V
|
160 nC
|
- 55 C
|
+ 175 C
|
330 W
|
Enhancement
|
|
Tube
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V 1 N-CH HEXFET 2.8nC
- IRLHS6376TRPBF
- Infineon Technologies
-
1:
$1.11
-
19,116En existencias
-
12,000Se espera el 4/2/2027
|
N.º de artículo de Mouser
942-IRLHS6376TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V 1 N-CH HEXFET 2.8nC
|
|
19,116En existencias
12,000Se espera el 4/2/2027
|
|
|
$1.11
|
|
|
$0.791
|
|
|
$0.492
|
|
|
$0.339
|
|
|
$0.217
|
|
|
Ver
|
|
|
$0.285
|
|
|
$0.256
|
|
|
$0.203
|
|
|
$0.185
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
PQFN 2x2 (DFN2020)
|
N-Channel
|
2 Channel
|
30 V
|
3.6 A
|
63 mOhms
|
- 12 V, 12 V
|
1.8 V
|
2.8 nC
|
- 55 C
|
+ 150 C
|
1.5 W
|
Enhancement
|
StrongIRFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V 8.3A 17.5mOhm 2.5V drive capable
- IRLTS6342TRPBF
- Infineon Technologies
-
1:
$0.67
-
15,829En existencias
-
15,000Se espera el 24/9/2026
|
N.º de artículo de Mouser
942-IRLTS6342TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 30V 8.3A 17.5mOhm 2.5V drive capable
|
|
15,829En existencias
15,000Se espera el 24/9/2026
|
|
|
$0.67
|
|
|
$0.414
|
|
|
$0.265
|
|
|
$0.201
|
|
|
$0.153
|
|
|
Ver
|
|
|
$0.18
|
|
|
$0.139
|
|
|
$0.12
|
|
|
$0.119
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
TSOP-6
|
N-Channel
|
1 Channel
|
30 V
|
8.3 A
|
17.5 mOhms
|
- 12 V, 12 V
|
1.8 V
|
11 nC
|
- 55 C
|
+ 150 C
|
2 W
|
Enhancement
|
HEXFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V DUAL N-CH LOGIC LEVEL HEXFET
- IRLHS6276TRPBF
- Infineon Technologies
-
1:
$0.94
-
7,990En existencias
-
NRND
|
N.º de artículo de Mouser
942-IRLHS6276TRPBF
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 20V DUAL N-CH LOGIC LEVEL HEXFET
|
|
7,990En existencias
|
|
|
$0.94
|
|
|
$0.586
|
|
|
$0.381
|
|
|
$0.292
|
|
|
$0.218
|
|
|
Ver
|
|
|
$0.264
|
|
|
$0.239
|
|
|
$0.194
|
|
Min.: 1
Mult.: 1
:
4,000
|
|
|
Si
|
SMD/SMT
|
PQFN 2x2 (DFN2020)
|
N-Channel
|
2 Channel
|
20 V
|
4.5 A
|
45 mOhms
|
- 12 V, 12 V
|
1.8 V
|
3.1 nC
|
- 55 C
|
+ 150 C
|
1.5 W
|
Enhancement
|
StrongIRFET
|
Reel, Cut Tape, MouseReel
|
|
