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Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
Toshiba MOSFETs UMOSVIII 40V 2.3m max(VGS=10V) DPAK
Datasheet
Product Comments
3,603In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 40 V 100 A 1.9 mOhms - 20 V, 20 V 2.5 V 76 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 U-MOSVIII-H Reel, Cut Tape, MouseReel
Toshiba MOSFETs UMOSVIII 100V 6.5m max(VGS=10V) DPAK
Datasheet
Product Comments
1,517In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 100 V 55 A 5.5 mOhms - 20 V, 20 V 4 V 49 nC - 55 C + 175 C 100 W Enhancement AEC-Q101 U-MOSVIII-H Reel, Cut Tape, MouseReel