Name: onsemi NCV51561BBDWR2G
Brand: onsemi
SKU: 863-NCV51561BBDWR2G
Price: 4.12 USD
Availability: InStock

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Galvanically Isolated Gate Drivers
RoHS:
Series:	NCV51561
Mounting Style:	SMD/SMT
Package / Case:	SOIC-16
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Propagation Delay - Max:	58 ns
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Product:	MOSFET Gate Drivers
Product Type:	Galvanically Isolated Gate Drivers
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs
Supply Voltage - Max:	5 V
Supply Voltage - Min:	3 V
Technology:	SiC
Type:	High-Side, Low-Side

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Datasheet

NCV51561BBDWR2G Datasheet

PCN

Material Composition Disclosure

Compliance Codes

USHTS:: 8542390090
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Philippines
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NCV51561 Isolated Dual Channel Gate Driver

onsemi NCV51561 Isolated Dual-Channel Gate Driver features a 4.5A source and 9A sink peak current with short and matched propagation delays. The NCV51561 is intended for fast switching to drive power MOSFETs and SiC MOSFET power switches.