CDMS24783-120 SL

Name: Central Semiconductor CDMS24783-120 SL
Brand: Central Semiconductor
SKU: 610-CDM24783120SL
Price: 28.63 USD
Availability: InStock

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Mouser #:

610-CDM24783120SL

Mfr. #:

CDMS24783-120 SL

Mfr.:

Central Semiconductor

Description:

SiC MOSFETs 18A,1200V Through-Hole MOSFET N-Channel SiC

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

CDMS24783-120 SL Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Central Semiconductor CDMS24783-120 SL

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Central Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	150 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	55 C
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	28 W
Channel Mode:	Depletion
Brand:	Central Semiconductor
Configuration:	Single
Product:	MOSFETs
Product Type:	SiC MOSFETS
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC MOSFET

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Datasheet

CDMS24783-120 SL Datasheet (PDF)

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

CDMS24783-120 N-Channel SiC MOSFET

Central Semiconductor CDMS24783-120 Silicon Carbide (SiC) N-Channel MOSFET offers a 1200V drain-source voltage for high-speed switching and fast reverse recovery applications. This SiC MOSFET features a 20V gate-source voltage, 18A continuous drain current, 28W power dissipation, and 20A pulsed drain current. The CDMS24783-120 MOSFET supports higher breakdown voltage and better thermal conductivity. This device is available in a TO-247 package with an operating temperature range of -55°C to 175°C. Typical applications include Electric Vehicles (EV), renewable energy systems, and medical imaging equipment.