Ampleon ART LDMOS RF Power Transistors
Ampleon Advanced Rugged Technology (ART) LDMOS RF Power Transistors are designed to cover a wide range of applications for ISM, broadcast, and communications. These power transistors feature dual-sided ESD protection, enabling class C operation and complete switch-off. The ARTx LDMOS RF power transistors offer high efficiency, excellent thermal stability, and excellent ruggedness with no device degradation. These power transistors feature nominal output powers of 35W and 2500W at 1dB gain compression. The ARTx LDMOS RF power transistors are ideal for industrial, scientific, medical, broadcast, and radar applications.
Features
- Designed for broadband operation
- Integrated dual-sided ESD protection enables class C operation and complete switch-off of the transistor
- Excellent ruggedness with no device degradation
- High efficiency
- Excellent thermal stability
Applications
- Broadcast:
- FM radio
- VHF TV
- Radar:
- Non-cellular communications
- UHF radar
- Industrial, scientific, and medical:
- Plasma generators
- MRI systems
- CO2 lasers
- Particle accelerators
Specifications
- Frequency range:
- 1MHz to 650MHz (ART35FE)
- 1MHz to 400MHz (ART2K5TPU)
- 200V drain source voltage
- -9V to 13V gate-source voltage range
- Supply voltage:
- Qualified up to a maximum of 65VDS (ART35FE)
- Qualified to 75VDS (ART2K5TPU)
- -65°C to 150°C storage temperature range
Additional Resources
Publicado: 2026-02-12
| Actualizado: 2026-02-12
