APC-E Silicon Carbide (SiC) Schottky Barrier Diodes
APC-E Silicon Carbide (SiC) Schottky Barrier Diodes are high-performance semiconductors for power applications. The APC-E SiC Schottky Barrier Diodes offer superior power handling due to high voltage and current ratings, enabling high frequency and high-temperature operation, which boosts power density, efficiency, and system compactness. These diodes feature a reduced capacitive charge (QC), which minimizes reverse recovery loss, aiding fast switching. These devices also maintain consistent performance over a broad temperature range, simplifying system design. Merits include low VF, high surge current, or balanced performance, tailored for PFC, solar inverters, onboard chargers, and EV charging.
Features
- No reverse recovery charge
- Positive temperature coefficient
- Temperature-independent performance
- Purely capacitive switching
- Operating temperature as high as +175°C
- High forward surge capability
- Single or dual diode chips
- Through-hole or surface-mount options
- Improves system efficiency compared to Si diodes
- Capable of switching at a higher frequency
- Enables high power density
- Reduces heat dissipation requirements
- Rugged operation
- High system reliability
- TO-220-2, TO-247-2, TO-247-3, and TO-252-2 package options
Applications
- Solar
- Central inverters
- String inverters
- Micro inverters
- Industrial
- Power supplies (PSUs)
- Uninterruptible power supplies (UPS)
- Energy storage
- PSUs for servers and storage
- Telecom power supplies
- Electric vehicles
- Onboard chargers
- Charging
Specifications
- 4A to 50A forward current range
- 28A to 520A forward surge current range
- 650V, 1.2kV, 1.7kV, and 2kV repetitive reverse voltage options
Application Guides
Publicado: 2025-04-18
| Actualizado: 2025-05-06