Infineon Technologies FF450R33T3E3/_B5 XHP™ 3 IGBT Module
Infineon Technologies FF450R33T3E3/_B5 XHP™ 3 IGBT Module is a 3.3kV, 450A Dual Insulated Gate Bipolar Transistor Module with TRENCHSTOP™ IGBT3 and an emitter controlled diode. Designed specifically for high-power operations, the highly integrated XHP IGBT Modules cover the full-voltage range of IGBT chips from 3.3kV to 6.5kV. Sharing the same compact 140mm x 100mm x 40mm dimensions, these IGBT Modules allow for scalable design with best-in-class reliability and high power density. The FF450R33T3E3B5 IGBT module features enhanced isolation of 10.4kV.
Features
- VCES = 3300V
- IC nom = 450A / ICRM = 900A
- VCEsat with positive temperature coefficient
- AlSiC base plate for increased thermal cycling capability
- Isolated base plate
- Half-bridge configuration for best performance
- Modular approach and wide scalability with high current density
- Optimal arrangement of main and auxiliary terminals
- Package with CTI >600
- High DC stability
- High short-circuit capability
- Low switching losses
- Low VCEsat
- Unbeatable robustness
- Tvj op=150°C
- Compact 140mm x 100mm x 40mm form factor
Applications
- Commercial, Construction, and Agricultural (CAV) vehicles
- Voltage converters
- Motor drives
- Traction drives
- UPS systems
- Windturbines
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Publicado: 2019-02-19
| Actualizado: 2022-03-11