ISSI DDR4 DRAM
ISSI DDR4 DRAM is a high-speed dynamic random-access memory device internally organized with an eight-bank setup. Double Data Rate 4 Synchronous Dynamic Random Access Memory banks are organized into two groups, each with four DRAM banks. DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed operation. ISSI 4GB DDR4 SDRAM devices deliver high-speed data transfer rates up to 2666Mbps, making them ideal for telecom and networking, automotive, and industrial embedded computing.Features
- 1.2V, 2.5V (VPP) standard voltage
- Data integrity
- Auto self refresh (ASR) by DRAM built-in TS
- Auto refresh and self refresh modes
- DRAM access bandwidth
- Separated IO gating structures by bank group
- Self refresh abort
- Fine granularity refresh
- Signal synchronization
- Write leveling via MR settings
- Read leveling via MPR
- Reliability and error handling
- Command/Address parity
- Data bus write CRC
- MPR readout
- Boundary-scan (x16)
- Power saving and efficiency
- POD with VDDQ termination
- Command/Address Latency (CAL)
- Maximum Power Saving
- Low power Auto Self Refresh (LPASR)
- Signal integrity
- Internal VREFDQ training
- Read preamble training
- Gear-down mode
- Per DRAM addressability
- Configurable DS for system compatibility
- Configurable on-die termination
- Data bus inversion (DBI)
- ZQ calibration for DS/ODT impedance accuracy via external ZQ pad (240Ω ±1%)
- Operating Temperature
- Commercial (Tc = 0°C to + 95°C)
- Industrial (Tc = -40°C to + 95°C)
- Automotive, A1 (Tc = -40°C to + 95°C)
- Automotive, A2 (Tc = -40°C to + 105°C)
- Automotive, A3 (Tc = -40°C to + 125°C)
Applications
- Telecom/networking
- SDN, NFV
- Access and aggregation nodes
- Switches and routers
- Packet optical transport
- Network storage (PON OLT, DSLAM, CMTS, and wireless)
- Industrial
- Human-machine interface
- Embedded computing
- Automotive
- Infotainment
- Telematics
- Driver information systems
Videos
Publicado: 2019-07-05
| Actualizado: 2024-03-05
