Microchip Technology MSC017SMA120x Silicon Carbide N-Ch Power MOSFETs
Microchip Technology MSC017SMA120x Silicon Carbide N-Ch Power MOSFETs increase the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost in high-voltage applications. The Microchip MSC017SMA120x SiC MOSFETs provide high efficiency to enable a lighter, more compact system with improved thermal capabilities and lower switching losses.
The MSC017SMA120J device is a 1200V, 17mΩ SiC MOSFET in a SOT-227 package. The MSC017SMA120B4 device is a 1200V, 17mΩ SiC MOSFET in a TO-247 package with a source sense. The MSC017SMA120S device is a 1200V, 17mΩ SiC MOSFET in a TO-268 (D3PAK) package.
Features
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, Tj(max) = 175°C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS compliant
Applications
- PV inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution
Additional Resources
Package Styles
Publicado: 2021-05-11
| Actualizado: 2022-03-11