Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Features

Ultra-fast recovery times
Soft recovery characteristics
Low forward voltage
Low leakage current
Avalanche energy rated
Essentially zero forward and reverse recovery = reduced switch and diode switching losses
AEC-Q101 qualified with usable +175°C junction temperature

Improved system efficiency at a higher switching frequency
Low switching losses
Low noise (EMI) switching
Higher reliability systems with increased power density
Lower System Cost (smaller magnetic/heat sinks, fewer components, reduced system size)
Commercial and Automotive qualified solutions

Applications

Commercial aviation:
- Actuation, Air conditioning, Power distribution
Industrial:
- Motor drives, Welding, UPS, Induction heating, Switched mode power supplies
Transportation/automotive:
- EV battery chargers, Onboard chargers, H/EV powertrain, DC-DC converters, Energy recovery

Smart energy:
- PV inverters, Wind turbines
Medical:
- MRI power supply, X-ray power supply
Defense and oil drilling:
- Motor drives, Auxiliary power supplies