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Mini-Circuits TAV1-331+ 50Ω Ultra-Low-Noise D-PHEMT Transistor

Mini-Circuits TAV1-331+ 50Ω Ultra-Low-Noise D-PHEMT Transistor is an MMIC D-PHEMT transistor with an operating frequency range from 10MHz to 4000MHz. The TAV1-331+ combines high gain with an extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make the component an ideal choice for sensitive receivers in communications systems. Manufactured using highly repeatable D-PHEMT technology, the unit comes housed in a tiny 1.4mm x 1.2mm MCLP package. This transistor requires external biasing and matching. The Mini-Circuits TAV1-331+ Ultra-Low-Noise D-PHEMT Transistor covers many wireless communications bands including cellular, ISM, GSM, WCDMA, WiMax, WLAN, and more.

Features

  • Ultra-low noise, 0.6dB typical at 300MHz
  • Medium current, 60mA
  • High gain, 24.1dB typical at 300MHz
  • High OIP3, +31.8dBm typical at 300MHz
  • High P1dB, 20.1dBm typical at 300MHz
  • Wideband frequency range of 10MHz to 4000MHz 
  • External biasing and matching required
  • May be used as a replacement for Broadcom ATF-331M4

Applications

  • Cellular
  • ISM
  • GSM
  • WCDMA
  • WiMax
  • WLAN
  • UNII and HIPERLAN

Specifications

  • -0.81V to -0.57V operational gate voltage range
  • -0.81V typical pinch-off voltage
  • 228mA typical saturated drain current
  • 282mS typical transconductance
  • 1000µA maximum gate-to-drain leakage current
  • 600µA maximum gate leakage current
  • 5V maximum drain-source voltage
  • -5V maximum gate-source and gate-drain voltage
  • 149mA maximum drain current
  • 400mW maximum total dissipated power
  • 20dBm maximum RF input power
  • Temperatures
    • +150°C maximum channel temperature
    • -40°C to +85°C operating range
    • -65°C to +150°C storage range
Publicado: 2021-03-10 | Actualizado: 2022-03-11