Mini-Circuits TAV2-501+ 50Ω SMD Low Noise E-PHEMPT RF Amplifier

Mini-Circuits TAV2-501+ 50Ω SMD Low Noise E-PHEMPT RF Amplifier is an ultra-low noise, high IP3 transistor device that is manufactured using EE-PHEMT technology enabling it to work with a single positive supply voltage. Measuring 2mm x 2mm, the 8-lead MCLP packaged component provides low inductance, repeatable transitions, and excellent thermal contact to the PCB. Enhanced linearity over a 0.4GHz to 3.9GHz frequency range makes the TAV2-501+ ideal for us in driver amplifiers for complex waveform up converter paths or divers in linearized transmit systems. This single device covers many wireless communications bands including cellular, ISM, GSM, WCDMA, WiMax, WLAN, and more.

Features

Low noise figure, 0.6dB typical at 0.9GHz, 4.5V
High output, +42.9dBm typical at 2GHz, 4.5V
2mm x 2mm, 8-lead MCLP package
Footprint compatible with ATF-501P8
Single positive supply voltage

Combines high gain (16.4dB) with a very low noise figure (0.7dB)
Externa biasing and matching required
Moisture sensitivity level (MSL) 1
RoHS compliant

Applications

Cellular
ISM
GSM

WCDMA
WiMax
WLAN

Specifications

50Ω impedance
0.4GHz to 3.9GHz frequency range
Maximum voltages
- 7V drain-source
- -5V to +0.8V gate-source/drain range
Maximum currents
- 500mA drain
- 60µA gate
2.4W maximum total dissipated power

28dBm maximum RF input power
23°C/W maximum thermal resistance
Temperatures
- 150°C maximum channel
- -40°C to +85°C operating range
- -65°C to +150°C storage range
45% typical power-added efficiency
65µA typical gate leakage current
0.38v typical threshold voltage