ROHM Semiconductor RBRxx60ANZ Low VF Type Schottky Barrier Diodes

ROHM Semiconductor RBRxx60ANZ Schottky Barrier Diodes are cathode common dual type diodes that come in a TO-220FN package. These diodes are manufactured using silicon epitaxial planar type construction and operate at -55°C to +150°C temperature range. ROHM Semiconductor RBRxx60ANZ barrier diodes offer low VF and high reliability. These Schottky barrier diodes are ideally suited for switching power supplies and general rectification.

Features

  • High reliability
  • Low VF
  • Cathode common dual type
  • Silicon epitaxial planar type construction
  • TO-220FN package
  • -55°C to +150°C temperature range

Applications

  • General rectification
  • Switching power supplies

Diode Structure & Dimensions (in mm)

Mechanical Drawing - ROHM Semiconductor RBRxx60ANZ Low VF Type Schottky Barrier Diodes
Publicado: 2020-12-10 | Actualizado: 2024-10-31