STMicroelectronics STGSH50M120D ACEPACK SMIT IGBT with Diode
STMicroelectronics STGSH50M120D ACEPACK SMIT IGBT with Diode combines two IGBTs and diodes in a half-bridge topology. The STMicroelectronics STGSH50M120D is mounted on a very compact and rugged easily surface-mounted package. The device is optimized in conduction and switching losses for hard switching commutation, where short-circuit ruggedness is an essential feature. A freewheeling diode with a low drop forward voltage is included in every switch. The result is a product specifically designed to maximize efficiency and power density in industrial drives.
Features
- Low-loss and short-circuit rugged IGBTs
- TJ = +175°C maximum junction temperature
- VCE(sat) = 1.8V (typ.) at IC = 50A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
- Soft and fast-recovery antiparallel diode
- Isolation rating of 3.4kVRMS/min
Applications
- Motor drives
- Industrial motor control
Electrical topology and pin positioning
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Publicado: 2024-12-17
| Actualizado: 2025-07-22