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STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.

The STMicroelectronics SGT transistors combine advanced G‑HEMT structures with robust packaging technologies to support high current capability and ultra‑fast switching behavior, promoting improved thermal performance and compact system designs. Key features include Kelvin‑source pads for optimized gate driving, high power‑management capability, and strong ESD robustness, making these transistors well‑suited for AC‑DC and DC‑DC converters, solar inverters, industrial power supplies, and other high‑frequency, high‑efficiency systems. Overall, ST’s E‑Mode PowerGaN portfolio provides designers with a powerful platform for building next‑generation power electronics with higher efficiency, reduced size, and enhanced performance.

Features

  • Surface-mount enhancement mode normally off transistor
  • Very high switching speed
  • High power management capability
  • Extremely low capacitances
  • Zero reverse recovery charge
  • Single channel configuration
  • Kelvin source pad for optimum gate driving (select package styles)
  • ESD safeguard
  • RoHS compliant

Applications

  • AC-DC converters
  • DC-DC converters
  • Solar inverters
  • Adapters for tablets, notebooks, and AIO
  • USB Type-C® PD adapters and quick chargers

Specifications

  • 1.8V or 2.5V gate-source threshold voltage options
  • 650V or 700V drain-source breakdown voltage options
  • 6A to 29A continuous drain current range
  • 65mΩ to 350mΩ drain-source resistance range
  • 47W to 305W power dissipation range
  • 1.5nC to 8.5nC gate charge range
  • 3.5ns to 9ns rise time range
  • 4ns to 9ns fall time range
  • 1.2ns to 7ns typical turn-off delay time range
  • 0.9ns to 10ns typical turn-on delay time range
  • -55°C to +150°C operating temperature range
  • DPAK-3, PowerFLAT-4, PowerFLAT-8, and TO-LL-11 package options

Featured Transistors

STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor

Built on GaN technology and designed for demanding power conversion applications.

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STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor

E-Mode PowerGaN transistor designed for high-efficiency power conversion applications.

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STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor

E-Mode PowerGaN transistor optimized for efficient power conversion in demanding applications.

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STMicroelectronics SGT65R65AL e-mode PowerGaN Transistors

650V, 25A transistors combined with well-established packaging technology.

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Complete Your Design

STMicroelectronics Standard Products

A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.

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View Results ( 8 ) Page
N.º de artículo Hoja de datos Id - Corriente de drenaje continua Dp - Disipación de potencia Qg - Carga de puerta Rds On - Resistencia entre drenaje y fuente
SGT350R70GTK SGT350R70GTK Hoja de datos 6 A 47 W 1.5 nC 350 mOhms
SGT070R70HTO SGT070R70HTO Hoja de datos 26 A 231 W 8.5 nC 70 mOhms
SGT080R70ILB SGT080R70ILB Hoja de datos 29 A 188 W 6.2 nC 80 mOhms
SGT105R70ILB SGT105R70ILB Hoja de datos 21.7 A 158 W 4.8 nC 105 mOhms
SGT140R70ILB SGT140R70ILB Hoja de datos 17 A 113 W 3.5 nC 140 mOhms
SGT190R70ILB SGT190R70ILB Hoja de datos 11.5 A 83 W 2.8 nC 190 mOhms
SGT240R70ILB SGT240R70ILB Hoja de datos 10 A 76 W 2 nC 240 mOhms
SGT65R65AL SGT65R65AL Hoja de datos 25 A 305 W 5.4 nC 65 mOhms
Publicado: 2026-02-18 | Actualizado: 2026-02-19