Texas Instruments NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

Features

  • Half-bridge power block
  • 90% system efficiency at 25A
  • Up to 40A operation
  • High-frequency operation (up to 1.5MHz)
  • High density - SON 5mm × 6mm footprint
  • Optimized for 5V gate drive
  • Half the size of discrete MOSFETs 
  • 2% higher efficiency 
  • Simplifies layout 
  • Energy-efficient POL design

Applications

  • Synchronous buck converters
    • - High-frequency applications
    • - High current, low duty cycle applications
  • Multiphase synchronous buck converters
  • POL DC-DC converters
  • IMVP, VRM, and VRD applications

Block Diagram

Texas Instruments NexFET Power Block ICs
Publicado: 2010-07-08 | Actualizado: 2022-03-11