Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.
Features
P-Channel MOSFETs
Reduced on-resistance by up to 45% for p-channel devices
Provides lower conduction losses, saving power
Longer time between charges for battery-powered applications
Employs either Gen-III or Gen-IV technology
Greener use of power
Gen-IV P-channel MOSFETs
Offer low on-resistance
Come in a thermally enhanced compact package
Variety of package sizes, from PowerPAK SO-8 down to 1.6mm x 1.6mm PowerPAK SC-75
Breakdown voltage 12V to 200V
N-Channel MOSFETs
30V to 250V drain-source breakdown voltage
50A to 478A drain current
Up to 27mΩ resistance rating
ThunderFET power (depending on the model)
125W to 375W power dissipation range
Employs either Gen-IV or Gen-V technology
Applications
P-Channel
Load switches
Smartphones
PDAs
MP3 players
Digital cameras
Camcorders
Battery and circuit protection
Motor drive control
Adapter and charger switch
Load switch
Battery management
N-Channel
Synchronous rectification
Synchronous buck converter
DC/DC converter
Primary side switch
Power tools
Motor drive switch
DC/AC inverters
Battery management
LED driver
Load switch
Power supplies
OR-ing and hot swap switch
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Vishay POWERPAK® 1212 MOSFETs
Ideal for switching applications and boasts a die-on resistance of approximately 1mΩ.