ROHM Semiconductor RRQ030P03HZG P-Channel Automotive MOSFET
ROHM Semiconductor RRQ030P03HZG P-Channel Small Signal MOSFET provides low on-resistance and incorporates a built-in G-S diode. This MOSFET offers -30V drain-to-source voltage (VDSS), ±3A continuous drain current (ID), and 1.25W power dissipation (PD). The RRQ030P03HZG MOSFET features lead-free lead plating and AEC-Q101 qualification. ROHM Semiconductor RRQ030P03HZG MOSFET comes in a small TSMT6 surface-mount package and is ideal for switching applications.
Features
- Low on-resistance
- Built-in G-S diode
- TSMT6 small surface-mount package
- Lead-free lead plating
- RoHS compliant
- AEC-Q101 qualified
Specifications
- -30V drain-to-source voltage (VDSS)
- 75mΩ maximum static drain-source on-state resistance (RDS(on))
- ±3A continuous drain current (ID)
- 1.25W power dissipation (PD)
- -55°C to +150°C operating junction temperature range
Inner Circuit Diagram
Performance Graphs
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Publicado: 2020-11-18
| Actualizado: 2024-10-29