STMicroelectronics STP65N045M9 MDmesh M9 Power MOSFET
STMicroelectronics STP65N045M9 MDmesh M9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low RDS(on) per area. The device implements innovative super-junction MDmesh M9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.
The STM STP65N045M9 MDmesh M9 Power MOSFET has a low on-resistance and reduced gate charge values. These features make the STP65N045M9 particularly suitable for applications that require superior power density and outstanding efficiency.
Features
- Excellent RDS(on) per area among silicon-based devices
- Higher VDSS rating
- Higher dv/dt capability
- Excellent switching performance
- Easy to drive
- 100% avalanche tested
Typical Application
Associated Products
STMicroelectronics MDmesh™ M9 Power MOSFETs
Feature enhanced device structure, low ON resistance, and low gate charge values.
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STMicroelectronics Standard Products
A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.
Publicado: 2022-05-18
| Actualizado: 2023-02-13