|
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R045M1HXTMA1
- Infineon Technologies
-
1:
$12.88
-
641En existencias
|
N.º de artículo de Mouser
726-IMBG120R045M1HXT
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
641En existencias
|
|
|
$12.88
|
|
|
$9.11
|
|
|
$7.89
|
|
|
$7.63
|
|
|
$7.13
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
47 A
|
45 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
46 nC
|
- 55 C
|
+ 175 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R060M1HXTMA1
- Infineon Technologies
-
1:
$9.88
-
329En existencias
|
N.º de artículo de Mouser
726-IMBG120R060M1HXT
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
329En existencias
|
|
|
$9.88
|
|
|
$6.56
|
|
|
$5.33
|
|
|
$4.97
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
83 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
34 nC
|
- 55 C
|
+ 175 C
|
181 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC MOSFET discrete 1200 V in TO247-4 package
- IMZ120R350M1HXKSA1
- Infineon Technologies
-
1:
$5.94
-
400En existencias
|
N.º de artículo de Mouser
726-IMZ120R350M1HXKS
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC MOSFET discrete 1200 V in TO247-4 package
|
|
400En existencias
|
|
|
$5.94
|
|
|
$3.75
|
|
|
$3.09
|
|
|
$2.98
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
4.7 A
|
350 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
5.3 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMZA65R107M1HXKSA1
- Infineon Technologies
-
1:
$5.83
-
437En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IMZA65R107M1HXKS
Fin de vida útil
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
437En existencias
|
|
|
$5.83
|
|
|
$3.91
|
|
|
$3.34
|
|
|
$3.33
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
142 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMW65R072M1HXKSA1
- Infineon Technologies
-
1:
$7.96
-
434En existencias
-
NRND
|
N.º de artículo de Mouser
726-IMW65R072M1HXKSA
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
434En existencias
|
|
|
$7.96
|
|
|
$4.77
|
|
|
$4.01
|
|
|
$3.72
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
26 A
|
94 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
22 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R450M1XTMA1
- Infineon Technologies
-
1:
$7.26
-
3,715En existencias
-
3,000En pedido
|
N.º de artículo de Mouser
726-IMBF170R450M1XTM
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
3,715En existencias
3,000En pedido
|
|
|
$7.26
|
|
|
$4.90
|
|
|
$3.56
|
|
|
$3.37
|
|
|
$3.15
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
9.8 A
|
450 mOhms
|
- 10 V, + 20 V
|
4.5 V
|
11 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R650M1XTMA1
- Infineon Technologies
-
1:
$6.12
-
1,944En existencias
|
N.º de artículo de Mouser
726-IMBF170R650M1XTM
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
1,944En existencias
|
|
|
$6.12
|
|
|
$4.06
|
|
|
$2.94
|
|
|
$2.69
|
|
|
$2.51
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
7.4 A
|
650 mOhms
|
- 10 V, + 20 V
|
4.5 V
|
8 nC
|
- 55 C
|
+ 175 C
|
88 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R030M1HXTMA1
- Infineon Technologies
-
1:
$15.77
-
1,125En existencias
|
N.º de artículo de Mouser
726-IMBG120R030M1HXT
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
1,125En existencias
|
|
|
$15.77
|
|
|
$12.84
|
|
|
$10.70
|
|
|
$10.27
|
|
|
$8.90
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
41 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
63 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R090M1HXTMA1
- Infineon Technologies
-
1:
$7.63
-
934En existencias
|
N.º de artículo de Mouser
726-IMBG120R090M1HXT
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
934En existencias
|
|
|
$7.63
|
|
|
$5.74
|
|
|
$4.30
|
|
|
$4.28
|
|
|
$3.91
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
26 A
|
125 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
23 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R140M1HXTMA1
- Infineon Technologies
-
1:
$7.44
-
2,000En existencias
|
N.º de artículo de Mouser
726-IMBG120R140M1HXT
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
2,000En existencias
|
|
|
$7.44
|
|
|
$4.83
|
|
|
$3.66
|
|
|
$3.53
|
|
|
$3.30
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
18 A
|
189 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
13.4 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R350M1HXTMA1
- Infineon Technologies
-
1:
$5.71
-
1,379En existencias
|
N.º de artículo de Mouser
726-IMBG120R350M1HXT
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
1,379En existencias
|
|
|
$5.71
|
|
|
$3.81
|
|
|
$2.73
|
|
|
$2.48
|
|
|
$2.32
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
4.7 A
|
468 mOhms
|
- 7 V, + 20 V
|
5.1 V
|
5.9 nC
|
- 55 C
|
+ 175 C
|
65 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
$16.93
-
238En existencias
|
N.º de artículo de Mouser
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
238En existencias
|
|
|
$16.93
|
|
|
$10.43
|
|
|
$9.56
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R140M1HXKSA1
- Infineon Technologies
-
1:
$9.03
-
379En existencias
|
N.º de artículo de Mouser
726-IMZ120R140M1HXKS
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
379En existencias
|
|
|
$9.03
|
|
|
$5.63
|
|
|
$5.06
|
|
|
$3.96
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
13 nC
|
- 55 C
|
+ 150 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
$14.73
-
1,300En existencias
-
NRND
|
N.º de artículo de Mouser
726-IMW65R027M1HXKSA
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
1,300En existencias
|
|
|
$14.73
|
|
|
$11.24
|
|
|
$8.89
|
|
|
$8.24
|
|
|
$8.02
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
47 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
62 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMW65R048M1HXKSA1
- Infineon Technologies
-
1:
$9.85
-
477En existencias
-
NRND
|
N.º de artículo de Mouser
726-IMW65R048M1HXKSA
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
477En existencias
|
|
|
$9.85
|
|
|
$6.95
|
|
|
$5.79
|
|
|
$5.16
|
|
|
$4.82
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R030M1HXKSA1
- Infineon Technologies
-
1:
$16.71
-
480Se espera el 11/6/2026
|
N.º de artículo de Mouser
726-IMW120R030M1HXKS
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
480Se espera el 11/6/2026
|
|
|
$16.71
|
|
|
$10.53
|
|
|
$9.68
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
40 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
$7.61
-
388En existencias
|
N.º de artículo de Mouser
726-IMW120R140M1HXKS
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
388En existencias
|
|
|
$7.61
|
|
|
$4.67
|
|
|
$3.92
|
|
|
$3.63
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
19 A
|
182 mOhms
|
- 7 V, + 23 V
|
3.5 V
|
13 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R350M1HXKSA1
- Infineon Technologies
-
1:
$6.36
-
417En existencias
-
480Se espera el 25/6/2026
|
N.º de artículo de Mouser
726-IMW120R350M1HXKS
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
417En existencias
480Se espera el 25/6/2026
|
|
|
$6.36
|
|
|
$3.61
|
|
|
$3.01
|
|
|
$2.65
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
4.7 A
|
455 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
5.3 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R060M1HXKSA1
- Infineon Technologies
-
1:
$11.27
-
65En existencias
-
960En pedido
|
N.º de artículo de Mouser
726-IMZ120R060M1HXKS
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
65En existencias
960En pedido
Existencias:
65 Se puede enviar inmediatamente
En pedido:
480 Se espera el 27/8/2026
480 Se espera el 3/9/2026
Plazo de entrega de fábrica:
30 Semanas
|
|
|
$11.27
|
|
|
$7.28
|
|
|
$6.21
|
|
|
$5.64
|
|
|
$5.63
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
78 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
31 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R090M1HXKSA1
- Infineon Technologies
-
1:
$9.89
-
199En existencias
|
N.º de artículo de Mouser
726-IMZ120R090M1HXKS
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
199En existencias
|
|
|
$9.89
|
|
|
$6.32
|
|
|
$5.17
|
|
|
$4.64
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
26 A
|
117 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
21 nC
|
- 55 C
|
+ 150 C
|
115 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R220M1HXKSA1
- Infineon Technologies
-
1:
$7.93
-
63En existencias
-
1,920En pedido
|
N.º de artículo de Mouser
726-IMZ120R220M1HXKS
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
63En existencias
1,920En pedido
|
|
|
$7.93
|
|
|
$4.94
|
|
|
$4.05
|
|
|
$3.54
|
|
|
$3.40
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
13 A
|
220 mOhms
|
- 7 V, + 23 V
|
5.7 V
|
8.5 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMW65R107M1HXKSA1
- Infineon Technologies
-
1:
$7.10
-
342En existencias
-
NRND
|
N.º de artículo de Mouser
726-IMW65R107M1HXKSA
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
342En existencias
|
|
|
$7.10
|
|
|
$4.06
|
|
|
$3.40
|
|
|
$3.04
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
142 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
15 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMZA65R027M1HXKSA1
- Infineon Technologies
-
1:
$15.22
-
18En existencias
-
1,200En pedido
-
NRND
|
N.º de artículo de Mouser
726-IMZA65R027M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
18En existencias
1,200En pedido
Existencias:
18 Se puede enviar inmediatamente
En pedido:
480 Se espera el 8/4/2027
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$15.22
|
|
|
$11.59
|
|
|
$9.66
|
|
|
$8.60
|
|
|
$8.04
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
59 A
|
34 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
63 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
$10.25
-
29En existencias
-
240Se espera el 29/4/2027
-
NRND
|
N.º de artículo de Mouser
726-IMZA65R048M1HXKS
NRND
|
Infineon Technologies
|
MOSFETs de SiC SILICON CARBIDE MOSFET
|
|
29En existencias
240Se espera el 29/4/2027
|
|
|
$10.25
|
|
|
$6.66
|
|
|
$5.33
|
|
|
$5.03
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
39 A
|
64 mOhms
|
- 5 V, + 23 V
|
5.7 V
|
33 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
CoolSiC
|
|
|
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
$5.34
-
11,000Se espera el 2/7/2026
|
N.º de artículo de Mouser
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
MOSFETs de SiC CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
11,000Se espera el 2/7/2026
|
|
|
$5.34
|
|
|
$3.55
|
|
|
$2.88
|
|
|
$2.41
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
1.7 kV
|
5.2 A
|
1 Ohms
|
- 10 V, + 20 V
|
4.5 V
|
5 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
CoolSiC
|
|