|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V Vds 20V Vgs PowerPAK SO-8
- SIR470DP-T1-GE3
- Vishay Semiconductors
-
1:
$3.60
-
28,812En existencias
|
N.º de artículo de Mouser
781-SIR470DP-T1-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V Vds 20V Vgs PowerPAK SO-8
|
|
28,812En existencias
|
|
|
$3.60
|
|
|
$2.35
|
|
|
$1.72
|
|
|
$1.40
|
|
|
$1.32
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerPAK-SO-8
|
N-Channel
|
1 Channel
|
40 V
|
60 A
|
1.9 mOhms
|
- 20 V, 20 V
|
1 V
|
155 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
|
TrenchFET, PowerPAK
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS 3
- IPB011N04L G
- Infineon Technologies
-
1:
$3.94
-
1,764En existencias
|
N.º de artículo de Mouser
726-IPB011N04LG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS 3
|
|
1,764En existencias
|
|
|
$3.94
|
|
|
$2.58
|
|
|
$1.90
|
|
|
$1.73
|
|
|
$1.49
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
40 V
|
180 A
|
800 uOhms
|
- 20 V, 20 V
|
1.2 V
|
346 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 81A TDSON-8 OptiMOS 3
- BSC054N04NS G
- Infineon Technologies
-
1:
$1.37
-
121,750En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC054N04NSG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 81A TDSON-8 OptiMOS 3
|
|
121,750En existencias
|
|
|
$1.37
|
|
|
$0.85
|
|
|
$0.554
|
|
|
$0.427
|
|
|
$0.309
|
|
|
Ver
|
|
|
$0.385
|
|
|
$0.364
|
|
|
$0.308
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
81 A
|
5.4 mOhms
|
- 20 V, 20 V
|
2 V
|
26 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Chan PowerTrench MOSFET 80V, 22A
- FDMS86320
- onsemi
-
1:
$2.65
-
6,594En existencias
|
N.º de artículo de Mouser
512-FDMS86320
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Chan PowerTrench MOSFET 80V, 22A
|
|
6,594En existencias
|
|
|
$2.65
|
|
|
$1.71
|
|
|
$1.17
|
|
|
$0.934
|
|
|
$0.809
|
|
|
$0.805
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
Power-56-8
|
N-Channel
|
1 Channel
|
80 V
|
22 A
|
11.7 mOhms
|
- 20 V, 20 V
|
2.4 V
|
41 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 85A TDSON-8 OptiMOS 3
- BSC050N04LS G
- Infineon Technologies
-
1:
$1.39
-
5,116En existencias
|
N.º de artículo de Mouser
726-BSC050N04LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 85A TDSON-8 OptiMOS 3
|
|
5,116En existencias
|
|
|
$1.39
|
|
|
$0.854
|
|
|
$0.563
|
|
|
$0.442
|
|
|
$0.296
|
|
|
Ver
|
|
|
$0.378
|
|
|
$0.349
|
|
|
$0.293
|
|
|
$0.285
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
85 A
|
4.2 mOhms
|
- 20 V, 20 V
|
1.2 V
|
47 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 N-CH 60V 37A
- IRFIZ48GPBF
- Vishay Semiconductors
-
1:
$3.56
-
8,807En existencias
|
N.º de artículo de Mouser
844-IRFIZ48GPBF
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) TO220 N-CH 60V 37A
|
|
8,807En existencias
|
|
|
$3.56
|
|
|
$1.82
|
|
|
$1.65
|
|
|
$1.49
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
37 A
|
18 mOhms
|
- 20 V, 20 V
|
2 V
|
110 nC
|
- 55 C
|
+ 175 C
|
50 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 50a .15 Ohms/VGS=1V
- FDD10AN06A0
- onsemi
-
1:
$2.75
-
8,050En existencias
|
N.º de artículo de Mouser
512-FDD10AN06A0
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 50a .15 Ohms/VGS=1V
|
|
8,050En existencias
|
|
|
$2.75
|
|
|
$1.78
|
|
|
$1.23
|
|
|
$0.996
|
|
|
$0.93
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
9.4 mOhms
|
- 20 V, 20 V
|
2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
135 W
|
Enhancement
|
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V Vds 20V Vgs SO-8
- SI4154DY-T1-GE3
- Vishay Semiconductors
-
1:
$2.18
-
19,236En existencias
|
N.º de artículo de Mouser
781-SI4154DY-GE3
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V Vds 20V Vgs SO-8
|
|
19,236En existencias
|
|
|
$2.18
|
|
|
$1.03
|
|
|
$0.779
|
|
|
$0.678
|
|
|
$0.588
|
|
|
Ver
|
|
|
$0.638
|
|
|
$0.555
|
|
|
$0.537
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
1 Channel
|
40 V
|
36 A
|
3.3 mOhms
|
- 20 V, 20 V
|
1 V
|
105 nC
|
- 55 C
|
+ 150 C
|
7.8 W
|
Enhancement
|
|
TrenchFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 75V 80a .6Ohms/VGS=1V
- FDP060AN08A0
- onsemi
-
1:
$3.94
-
3,069En existencias
|
N.º de artículo de Mouser
512-FDP060AN08A0
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 75V 80a .6Ohms/VGS=1V
|
|
3,069En existencias
|
|
|
$3.94
|
|
|
$1.76
|
|
|
$1.67
|
|
|
$1.46
|
|
|
$1.32
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
75 V
|
80 A
|
6 mOhms
|
- 20 V, 20 V
|
2 V
|
95 nC
|
- 55 C
|
+ 175 C
|
255 W
|
Enhancement
|
|
PowerTrench
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V 33A 7.8W 3.8mohm @ 10V
- SI4456DY-T1-E3
- Vishay Semiconductors
-
1:
$2.91
-
2,803En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
781-SI4456DY-T1-E3
Fin de vida útil
|
Vishay Semiconductors
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V 33A 7.8W 3.8mohm @ 10V
|
|
2,803En existencias
|
|
|
$2.91
|
|
|
$2.00
|
|
|
$1.45
|
|
|
$1.31
|
|
|
$1.31
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
SOIC-8
|
N-Channel
|
1 Channel
|
40 V
|
33 A
|
3.8 mOhms
|
- 20 V, 20 V
|
1.5 V
|
122 nC
|
- 55 C
|
+ 150 C
|
7.8 W
|
Enhancement
|
|
TrenchFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement, Logic Level 60V, D2PAK-3
- NDB5060L
- onsemi
-
1:
$3.39
-
932En existencias
|
N.º de artículo de Mouser
512-NDB5060L
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement, Logic Level 60V, D2PAK-3
|
|
932En existencias
|
|
|
$3.39
|
|
|
$2.01
|
|
|
$1.49
|
|
|
$1.43
|
|
|
$1.19
|
|
|
Ver
|
|
|
$1.14
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
Si
|
SMD/SMT
|
D2PAK-3
|
N-Channel
|
1 Channel
|
60 V
|
26 A
|
42 mOhms
|
- 16 V, 16 V
|
1 V
|
24 nC
|
- 65 C
|
+ 175 C
|
68 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 41A, Single N-Channel Power MOSFET
- TQM150NB04CR RLG
- Taiwan Semiconductor
-
1:
$1.63
-
7,260En existencias
|
N.º de artículo de Mouser
821-TQM150NB04CRRLG
|
Taiwan Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 41A, Single N-Channel Power MOSFET
|
|
7,260En existencias
|
|
|
$1.63
|
|
|
$0.962
|
|
|
$0.67
|
|
|
$0.541
|
|
|
$0.441
|
|
|
Ver
|
|
|
$0.494
|
|
|
$0.417
|
|
|
$0.415
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
PDFN56U-8
|
N-Channel
|
1 Channel
|
40 V
|
41 A
|
15 mOhms
|
- 20 V, 20 V
|
3.8 V
|
20 nC
|
- 55 C
|
+ 175 C
|
56 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 50A, Dual N-Channel Power MOSFET
- TQM110NB04DCR RLG
- Taiwan Semiconductor
-
1:
$2.63
-
6,006En existencias
|
N.º de artículo de Mouser
821-TQM110NB04DCRRLG
|
Taiwan Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 50A, Dual N-Channel Power MOSFET
|
|
6,006En existencias
|
|
|
$2.63
|
|
|
$1.68
|
|
|
$1.17
|
|
|
$0.986
|
|
|
$0.825
|
|
|
Ver
|
|
|
$0.873
|
|
|
$0.804
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
PDFN56U-6
|
N-Channel
|
2 Channel
|
40 V
|
10 A
|
11 mOhms
|
- 20 V, 20 V
|
3.8 V
|
26 nC
|
- 55 C
|
+ 175 C
|
2.5 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 30A, Dual N-Channel Power MOSFET
- TQM250NB06DCR RLG
- Taiwan Semiconductor
-
1:
$2.10
-
4,925En existencias
|
N.º de artículo de Mouser
821-TQM250NB06DCRRLG
|
Taiwan Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 30A, Dual N-Channel Power MOSFET
|
|
4,925En existencias
|
|
|
$2.10
|
|
|
$1.23
|
|
|
$0.863
|
|
|
$0.718
|
|
|
$0.62
|
|
|
Ver
|
|
|
$0.656
|
|
|
$0.606
|
|
|
$0.598
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
PDFN56U-6
|
N-Channel
|
2 Channel
|
60 V
|
6 A
|
25 mOhms
|
- 20 V, 20 V
|
3.8 V
|
24 nC
|
- 55 C
|
+ 175 C
|
2.5 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 25A, Dual N-Channel Power MOSFET
- TQM300NB06DCR RLG
- Taiwan Semiconductor
-
1:
$1.60
-
4,733En existencias
|
N.º de artículo de Mouser
821-TQM300NB06DCRRLG
|
Taiwan Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 25A, Dual N-Channel Power MOSFET
|
|
4,733En existencias
|
|
|
$1.60
|
|
|
$0.915
|
|
|
$0.735
|
|
|
$0.628
|
|
|
$0.516
|
|
|
Ver
|
|
|
$0.58
|
|
|
$0.511
|
|
|
$0.51
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
PDFN56U-6
|
N-Channel
|
2 Channel
|
60 V
|
6 A
|
30 mOhms
|
- 20 V, 20 V
|
3.8 V
|
20 nC
|
- 55 C
|
+ 175 C
|
2.5 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 50A, Single N-Channel Power MOSFET
- TQM130NB06CR RLG
- Taiwan Semiconductor
-
1:
$1.69
-
3,865En existencias
|
N.º de artículo de Mouser
821-TQM130NB06CRRLG
|
Taiwan Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 50A, Single N-Channel Power MOSFET
|
|
3,865En existencias
|
|
|
$1.69
|
|
|
$1.03
|
|
|
$0.752
|
|
|
$0.627
|
|
|
$0.516
|
|
|
Ver
|
|
|
$0.574
|
|
|
$0.471
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
PDFN56U-5
|
N-Channel
|
1 Channel
|
60 V
|
10 A
|
13 Ohms
|
- 20 V, 20 V
|
3.8 V
|
40 nC
|
- 55 C
|
+ 175 C
|
3.1 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 121A, Single N-Channel Power MOSFET
- TQM033NB04CR RLG
- Taiwan Semiconductor
-
1:
$1.95
-
3,901En existencias
|
N.º de artículo de Mouser
821-TQM033NB04CRRLG
|
Taiwan Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 121A, Single N-Channel Power MOSFET
|
|
3,901En existencias
|
|
|
$1.95
|
|
|
$1.26
|
|
|
$0.959
|
|
|
$0.765
|
|
|
$0.634
|
|
|
Ver
|
|
|
$0.735
|
|
|
$0.60
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
PDFN56U-8
|
N-Channel
|
1 Channel
|
40 V
|
121 A
|
3.3 mOhms
|
- 20 V, 20 V
|
3.8 V
|
87 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 54A, Single N-Channel Power MOSFET
- TQM110NB04CR RLG
- Taiwan Semiconductor
-
1:
$1.56
-
4,924En existencias
|
N.º de artículo de Mouser
821-TQM110NB04CRRLG
|
Taiwan Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 54A, Single N-Channel Power MOSFET
|
|
4,924En existencias
|
|
|
$1.56
|
|
|
$1.03
|
|
|
$0.743
|
|
|
$0.62
|
|
|
$0.51
|
|
|
Ver
|
|
|
$0.57
|
|
|
$0.465
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
PDFN56U-5
|
N-Channel
|
1 Channel
|
40 V
|
12 A
|
11 mOhms
|
- 20 V, 20 V
|
3.8 V
|
25 nC
|
- 55 C
|
+ 175 C
|
3.1 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 75A, Single N-Channel Power MOSFET
- TQM070NB04CR RLG
- Taiwan Semiconductor
-
1:
$1.42
-
5,000En existencias
|
N.º de artículo de Mouser
821-TQM070NB04CRRLG
|
Taiwan Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 75A, Single N-Channel Power MOSFET
|
|
5,000En existencias
|
|
|
$1.42
|
|
|
$0.911
|
|
|
$0.675
|
|
|
$0.563
|
|
|
$0.418
|
|
|
Ver
|
|
|
$0.514
|
|
|
$0.417
|
|
|
$0.403
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
PDFN56U-5
|
N-Channel
|
1 Channel
|
40 V
|
15 A
|
7 mOhms
|
- 20 V, 20 V
|
3.8 V
|
42 nC
|
- 55 C
|
+ 175 C
|
3.1 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 157A, Single N-Channel Power MOSFET
- TQM025NB04CR RLG
- Taiwan Semiconductor
-
1:
$3.16
-
4,740En existencias
|
N.º de artículo de Mouser
821-TQM025NB04CRRLG
|
Taiwan Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V, 157A, Single N-Channel Power MOSFET
|
|
4,740En existencias
|
|
|
$3.16
|
|
|
$1.84
|
|
|
$1.38
|
|
|
$1.20
|
|
|
$1.15
|
|
|
$1.07
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
PDFN56U-5
|
N-Channel
|
1 Channel
|
40 V
|
24 A
|
2.5 mOhms
|
- 20 V, 20 V
|
3.8 V
|
118 nC
|
- 55 C
|
+ 175 C
|
3.1 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 27A, Single N-Channel Power MOSFET
- TQM300NB06CR RLG
- Taiwan Semiconductor
-
1:
$1.35
-
4,196En existencias
|
N.º de artículo de Mouser
821-TQM300NB06CRRLG
|
Taiwan Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V, 27A, Single N-Channel Power MOSFET
|
|
4,196En existencias
|
|
|
$1.35
|
|
|
$0.816
|
|
|
$0.59
|
|
|
$0.481
|
|
|
$0.398
|
|
|
Ver
|
|
|
$0.438
|
|
|
$0.348
|
|
|
$0.341
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
PDFN56U-5
|
N-Channel
|
1 Channel
|
60 V
|
6 A
|
30 mOhms
|
- 20 V, 20 V
|
3.8 V
|
20 nC
|
- 55 C
|
+ 175 C
|
3.1 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel PowerTrench
- FDB035AN06A0
- onsemi
-
1:
$6.85
-
5,972En existencias
-
4,800Se espera el 28/7/2027
|
N.º de artículo de Mouser
512-FDB035AN06A0
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel PowerTrench
|
|
5,972En existencias
4,800Se espera el 28/7/2027
|
|
|
$6.85
|
|
|
$4.61
|
|
|
$3.34
|
|
|
$3.11
|
|
|
$2.92
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
Si
|
SMD/SMT
|
D2PAK-3
|
N-Channel
|
1 Channel
|
60 V
|
80 A
|
3.2 mOhms
|
- 20 V, 20 V
|
2 V
|
124 nC
|
- 55 C
|
+ 175 C
|
310 W
|
Enhancement
|
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55 Volt 80 Amp
- STB80NF55-06T4
- STMicroelectronics
-
1:
$3.69
-
1,778En existencias
|
N.º de artículo de Mouser
511-STB80NF55-06
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55 Volt 80 Amp
|
|
1,778En existencias
|
|
|
$3.69
|
|
|
$2.40
|
|
|
$1.69
|
|
|
$1.38
|
|
|
$1.27
|
|
|
Ver
|
|
|
$1.14
|
|
|
$1.11
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
55 V
|
80 A
|
6.5 mOhms
|
- 20 V, 20 V
|
2 V
|
189 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V N-Ch PowerTrench MOSFET
- FDB050AN06A0
- onsemi
-
1:
$3.34
-
4,937En existencias
|
N.º de artículo de Mouser
512-FDB050AN06A0
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V N-Ch PowerTrench MOSFET
|
|
4,937En existencias
|
|
|
$3.34
|
|
|
$2.18
|
|
|
$1.52
|
|
|
$1.30
|
|
|
$1.21
|
|
Min.: 1
Mult.: 1
:
800
|
|
|
Si
|
SMD/SMT
|
D2PAK-3
|
N-Channel
|
1 Channel
|
60 V
|
80 A
|
4.3 mOhms
|
- 20 V, 20 V
|
2 V
|
80 nC
|
- 55 C
|
+ 175 C
|
245 W
|
Enhancement
|
|
PowerTrench
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 80a .38 Ohms/VGS=1V
- FDP038AN06A0
- onsemi
-
1:
$4.68
-
4,709En existencias
|
N.º de artículo de Mouser
512-FDP038AN06A0
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V 80a .38 Ohms/VGS=1V
|
|
4,709En existencias
|
|
|
$4.68
|
|
|
$2.42
|
|
|
$2.19
|
|
|
$2.17
|
|
|
Ver
|
|
|
$2.00
|
|
|
$1.92
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
60 V
|
80 A
|
3.8 mOhms
|
- 20 V, 20 V
|
2 V
|
124 nC
|
- 55 C
|
+ 175 C
|
310 W
|
Enhancement
|
|
PowerTrench
|
Tube
|
|