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|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 560V 21A TO220-3
- SPP21N50C3XKSA1
- Infineon Technologies
-
1:
$4.25
-
399En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPP21N50C3XKSA1
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 560V 21A TO220-3
|
|
399En existencias
|
|
|
$4.25
|
|
|
$2.18
|
|
|
$1.98
|
|
|
$1.57
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
21 A
|
190 mOhms
|
- 20 V, 20 V
|
2.1 V
|
95 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 24.3A TO247-3 CoolMOS C3
- SPW24N60C3
- Infineon Technologies
-
1:
$6.08
-
111En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-SPW24N60C3
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 24.3A TO247-3 CoolMOS C3
|
|
111En existencias
|
|
|
$6.08
|
|
|
$3.47
|
|
|
$2.89
|
|
|
$2.66
|
|
|
$2.64
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
24.3 A
|
160 mOhms
|
- 20 V, 20 V
|
3.9 V
|
104.9 nC
|
- 55 C
|
+ 150 C
|
240 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.3A TO220FP-3 CoolMOS C3
- SPA07N60C3
- Infineon Technologies
-
1:
$2.82
-
135En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPA07N60C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.3A TO220FP-3 CoolMOS C3
|
|
135En existencias
|
|
|
$2.82
|
|
|
$1.40
|
|
|
$1.26
|
|
|
$1.16
|
|
|
Ver
|
|
|
$0.917
|
|
|
$0.877
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
600 V
|
7.3 A
|
600 mOhms
|
- 20 V, 20 V
|
2.1 V
|
21 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO247-3 CoolMOS C3
- SPW20N60C3
- Infineon Technologies
-
1:
$4.93
-
27En existencias
-
1,200Se espera el 5/3/2026
-
NRND
|
N.º de artículo de Mouser
726-SPW20N60C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO247-3 CoolMOS C3
|
|
27En existencias
1,200Se espera el 5/3/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
20.7 A
|
190 mOhms
|
- 20 V, 20 V
|
2.1 V
|
87 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 560V 21A I2PAK-3
- SPI21N50C3XKSA1
- Infineon Technologies
-
1:
$4.16
-
Plazo de entrega no en existencias 8 Semanas
|
N.º de artículo de Mouser
726-SPI21N50C3XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 560V 21A I2PAK-3
|
|
Plazo de entrega no en existencias 8 Semanas
|
|
|
$4.16
|
|
|
$2.02
|
|
|
$1.85
|
|
|
$1.56
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
500 V
|
21 A
|
190 mOhms
|
- 20 V, 20 V
|
3 V
|
95 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 11A TO220FP-3 CoolMOS C3
- SPA11N65C3
- Infineon Technologies
-
1:
$3.00
-
Plazo de entrega 11 Semanas
-
NRND
|
N.º de artículo de Mouser
726-SPA11N65C3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 11A TO220FP-3 CoolMOS C3
|
|
Plazo de entrega 11 Semanas
|
|
|
$3.00
|
|
|
$1.50
|
|
|
$1.35
|
|
|
$1.08
|
|
|
$0.955
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
380 mOhms
|
- 20 V, 20 V
|
3.9 V
|
45 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
