|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
- STP16N65M2
- STMicroelectronics
-
1:
$2.83
-
251En existencias
-
1,000Se espera el 27/7/2026
|
N.º de artículo de Mouser
511-STP16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
|
|
251En existencias
1,000Se espera el 27/7/2026
|
|
|
$2.83
|
|
|
$1.82
|
|
|
$1.30
|
|
|
$1.09
|
|
|
Ver
|
|
|
$0.922
|
|
|
$0.916
|
|
|
$0.902
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP pack
- STF18N60DM2
- STMicroelectronics
-
1:
$3.08
-
371En existencias
|
N.º de artículo de Mouser
511-STF18N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP pack
|
|
371En existencias
|
|
|
$3.08
|
|
|
$1.99
|
|
|
$1.46
|
|
|
$1.22
|
|
|
Ver
|
|
|
$1.05
|
|
|
$1.00
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
- STL4N10F7
- STMicroelectronics
-
1:
$0.98
-
923En existencias
|
N.º de artículo de Mouser
511-STL4N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
|
|
923En existencias
|
|
|
$0.98
|
|
|
$0.611
|
|
|
$0.398
|
|
|
$0.307
|
|
|
$0.234
|
|
|
Ver
|
|
|
$0.27
|
|
|
$0.224
|
|
|
$0.219
|
|
|
$0.217
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
- STL64DN4F7AG
- STMicroelectronics
-
1:
$2.16
-
654En existencias
|
N.º de artículo de Mouser
511-STL64DN4F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
|
|
654En existencias
|
|
|
$2.16
|
|
|
$1.39
|
|
|
$0.957
|
|
|
$0.811
|
|
|
$0.59
|
|
|
Ver
|
|
|
$0.678
|
|
|
$0.563
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
|
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in
- STHU47N60DM6AG
- STMicroelectronics
-
1:
$6.50
-
59En existencias
|
N.º de artículo de Mouser
511-STHU47N60DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in
|
|
59En existencias
|
|
|
$6.50
|
|
|
$4.58
|
|
|
$3.30
|
|
|
$3.16
|
|
|
$3.05
|
|
|
$3.00
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 9 mOhm typ., 18 A STripFET F7 Power MOSFET
- STL52DN4LF7AG
- STMicroelectronics
-
1:
$1.73
-
2,805En existencias
|
N.º de artículo de Mouser
511-STL52DN4LF7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 9 mOhm typ., 18 A STripFET F7 Power MOSFET
|
|
2,805En existencias
|
|
|
$1.73
|
|
|
$1.10
|
|
|
$0.734
|
|
|
$0.602
|
|
|
$0.457
|
|
|
Ver
|
|
|
$0.527
|
|
|
$0.425
|
|
|
$0.418
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
|
|
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
- ST13007D
- STMicroelectronics
-
1:
$2.12
-
1,336En existencias
|
N.º de artículo de Mouser
511-ST13007D
|
STMicroelectronics
|
Transistores bipolares - Transistores de empalme bipolar (BJT) High voltage fast-switching NPN power transistor
|
|
1,336En existencias
|
|
|
$2.12
|
|
|
$0.747
|
|
|
$0.675
|
|
|
$0.64
|
|
|
Ver
|
|
|
$0.596
|
|
|
$0.59
|
|
|
$0.568
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
Through Hole
|
TO-220-3
|
NPN
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
- STB10N60M2
- STMicroelectronics
-
1:
$2.43
-
1,075En existencias
|
N.º de artículo de Mouser
511-STB10N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.55 Ohm typ. 7.5A
|
|
1,075En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.868
|
|
|
$0.73
|
|
|
Ver
|
|
|
$0.70
|
|
|
$0.686
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 35 Amp
- STB30NF10T4
- STMicroelectronics
-
1:
$2.02
-
1,412En existencias
|
N.º de artículo de Mouser
511-STB30NF10
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 35 Amp
|
|
1,412En existencias
|
|
|
$2.02
|
|
|
$1.29
|
|
|
$0.87
|
|
|
$0.691
|
|
|
$0.564
|
|
|
Ver
|
|
|
$0.555
|
|
|
$0.531
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a DPAK package
- STD18N60M6
- STMicroelectronics
-
1:
$2.22
-
1,632En existencias
|
N.º de artículo de Mouser
511-STD18N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 230 mOhm typ., 13 A MDmesh M6 Power MOSFET in a DPAK package
|
|
1,632En existencias
|
|
|
$2.22
|
|
|
$1.42
|
|
|
$0.98
|
|
|
$0.784
|
|
|
$0.608
|
|
|
Ver
|
|
|
$0.699
|
|
|
$0.582
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 25 Amp
- STD20NF10T4
- STMicroelectronics
-
1:
$1.58
-
1,981En existencias
|
N.º de artículo de Mouser
511-STD20NF10
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 25 Amp
|
|
1,981En existencias
|
|
|
$1.58
|
|
|
$0.992
|
|
|
$0.658
|
|
|
$0.52
|
|
|
$0.398
|
|
|
Ver
|
|
|
$0.469
|
|
|
$0.366
|
|
|
$0.361
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
- STD3NM60N
- STMicroelectronics
-
1:
$1.75
-
2,222En existencias
|
N.º de artículo de Mouser
511-STD3NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 V 1.6 Ohm 3.3 A MDmesh II
|
|
2,222En existencias
|
|
|
$1.75
|
|
|
$1.11
|
|
|
$0.746
|
|
|
$0.591
|
|
|
$0.459
|
|
|
Ver
|
|
|
$0.541
|
|
|
$0.451
|
|
|
$0.446
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
- STD6N60M2
- STMicroelectronics
-
1:
$1.99
-
2,265En existencias
|
N.º de artículo de Mouser
511-STD6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
|
|
2,265En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.861
|
|
|
$0.73
|
|
|
$0.549
|
|
|
Ver
|
|
|
$0.662
|
|
|
$0.507
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2 mOhm typ., 80 A, STripFET H6 Power MOSFET in DPAK package
- STD80N3LL
- STMicroelectronics
-
1:
$0.94
-
2,977En existencias
|
N.º de artículo de Mouser
511-STD80N3LL
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2 mOhm typ., 80 A, STripFET H6 Power MOSFET in DPAK package
|
|
2,977En existencias
|
|
|
$0.94
|
|
|
$0.662
|
|
|
$0.484
|
|
|
$0.402
|
|
|
$0.339
|
|
|
Ver
|
|
|
$0.368
|
|
|
$0.316
|
|
|
$0.313
|
|
|
$0.305
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
- STF26N60M2
- STMicroelectronics
-
1:
$3.41
-
981En existencias
|
N.º de artículo de Mouser
511-STF26N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP packag
|
|
981En existencias
|
|
|
$3.41
|
|
|
$1.72
|
|
|
$1.55
|
|
|
$1.26
|
|
|
Ver
|
|
|
$1.16
|
|
|
$1.09
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Módulos IGBT SLLIMM 2nd,3phs 600V shrt-crct
- STGIF10CH60TS-L
- STMicroelectronics
-
1:
$13.16
-
97En existencias
|
N.º de artículo de Mouser
511-STGIF10CH60TS-L
|
STMicroelectronics
|
Módulos IGBT SLLIMM 2nd,3phs 600V shrt-crct
|
|
97En existencias
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
SDIP2F-26
|
|
|
|
|
IGBTs 20 A - 600 V - short circuit rugged IGBT
- STGP19NC60KD
- STMicroelectronics
-
1:
$3.21
-
997En existencias
|
N.º de artículo de Mouser
511-STGP19NC60KD
|
STMicroelectronics
|
IGBTs 20 A - 600 V - short circuit rugged IGBT
|
|
997En existencias
|
|
|
$3.21
|
|
|
$1.61
|
|
|
$1.45
|
|
|
$1.18
|
|
|
Ver
|
|
|
$1.08
|
|
|
$1.01
|
|
|
$1.00
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-220-3
|
|
|
|
|
IGBTs Trench gate field-stop 650 V, 80 A high speed HB series IGBT
- STGW80H65DFB-4
- STMicroelectronics
-
1:
$8.26
-
258En existencias
|
N.º de artículo de Mouser
511-STGW80H65DFB-4
|
STMicroelectronics
|
IGBTs Trench gate field-stop 650 V, 80 A high speed HB series IGBT
|
|
258En existencias
|
|
|
$8.26
|
|
|
$6.01
|
|
|
$5.01
|
|
|
$3.56
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
|
|
|
|
|
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
- STGWA50HP65FB2
- STMicroelectronics
-
1:
$3.62
-
662En existencias
|
N.º de artículo de Mouser
511-STGWA50HP65FB2
|
STMicroelectronics
|
IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO-247 long
|
|
662En existencias
|
|
|
$3.62
|
|
|
$1.98
|
|
|
$1.35
|
|
|
$1.25
|
|
|
$1.18
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss
- STGYA120M65DF2
- STMicroelectronics
-
1:
$9.21
-
380En existencias
|
N.º de artículo de Mouser
511-STGYA120M65DF2
|
STMicroelectronics
|
IGBTs Trench gate field-stop IGBT, M series 650 V, 120 A low loss
|
|
380En existencias
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
Max247-3
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
- STI20N65M5
- STMicroelectronics
-
1:
$3.85
-
958En existencias
|
N.º de artículo de Mouser
511-STI20N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5
|
|
958En existencias
|
|
|
$3.85
|
|
|
$1.86
|
|
|
$1.53
|
|
|
$1.39
|
|
|
Ver
|
|
|
$1.34
|
|
|
$1.30
|
|
|
$1.29
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
- STL13N60M6
- STMicroelectronics
-
1:
$2.60
-
2,800En existencias
|
N.º de artículo de Mouser
511-STL13N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 330 mOhm typ., 7 A MDmesh M6 Power MOSFET in a PowerFLAT 5x6 HV
|
|
2,800En existencias
|
|
|
$2.60
|
|
|
$1.66
|
|
|
$1.13
|
|
|
$0.924
|
|
|
$0.727
|
|
|
Ver
|
|
|
$0.834
|
|
|
$0.718
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.066Ohm 31A MDmesh M5
- STL36N55M5
- STMicroelectronics
-
1:
$5.93
-
2,984En existencias
|
N.º de artículo de Mouser
511-STL36N55M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 550V 0.066Ohm 31A MDmesh M5
|
|
2,984En existencias
|
|
|
$5.93
|
|
|
$4.29
|
|
|
$3.11
|
|
|
$2.53
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
- STL40N10F7
- STMicroelectronics
-
1:
$2.10
-
2,086En existencias
|
N.º de artículo de Mouser
511-STL40N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.020Ohm 10A STripFET VII
|
|
2,086En existencias
|
|
|
$2.10
|
|
|
$1.34
|
|
|
$0.924
|
|
|
$0.736
|
|
|
$0.57
|
|
|
Ver
|
|
|
$0.659
|
|
|
$0.548
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
- STP24N60DM2
- STMicroelectronics
-
1:
$3.83
-
855En existencias
|
N.º de artículo de Mouser
511-STP24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
|
|
855En existencias
|
|
|
$3.83
|
|
|
$1.52
|
|
|
$1.50
|
|
|
$1.48
|
|
|
Ver
|
|
|
$1.38
|
|
|
$1.34
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|