|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D4N04XMT1G
- onsemi
-
1:
$3.74
-
1,532En existencias
-
1,500Se espera el 18/3/2026
|
N.º de artículo de Mouser
863-NTMFS0D4N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
1,532En existencias
1,500Se espera el 18/3/2026
|
|
|
$3.74
|
|
|
$2.45
|
|
|
$1.72
|
|
|
$1.52
|
|
|
$1.42
|
|
|
$1.42
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
509 A
|
420 uOhms
|
- 20 V, 20 V
|
3.5 V
|
133 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D6N04XMT1G
- onsemi
-
1:
$2.99
-
4,500En existencias
-
1,500Se espera el 3/4/2026
|
N.º de artículo de Mouser
863-NTMFS0D6N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
4,500En existencias
1,500Se espera el 3/4/2026
|
|
|
$2.99
|
|
|
$1.95
|
|
|
$1.35
|
|
|
$1.12
|
|
|
$1.05
|
|
|
$1.05
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
380 A
|
570 uOhms
|
- 20 V, 20 V
|
3.5 V
|
86.4 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS1D1N04XMT1G
- onsemi
-
1:
$2.27
-
2,158En existencias
|
N.º de artículo de Mouser
863-NTMFS1D1N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
2,158En existencias
|
|
|
$2.27
|
|
|
$1.46
|
|
|
$0.99
|
|
|
$0.791
|
|
|
$0.715
|
|
|
$0.715
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
233 A
|
1.05 mOhms
|
- 20 V, 20 V
|
3.5 V
|
49.1 nC
|
- 55 C
|
+ 175 C
|
104 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS1D3N04XMT1G
- onsemi
-
1:
$1.93
-
6,718En existencias
|
N.º de artículo de Mouser
863-NTMFS1D3N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
6,718En existencias
|
|
|
$1.93
|
|
|
$1.26
|
|
|
$0.849
|
|
|
$0.72
|
|
|
$0.601
|
|
|
$0.572
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
195 A
|
1.3 mOhms
|
- 20 V, 20 V
|
3.5 V
|
38.5 nC
|
- 55 C
|
+ 175 C
|
90 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS2D3N04XMT1G
- onsemi
-
1:
$1.58
-
5,923En existencias
|
N.º de artículo de Mouser
863-NTMFS2D3N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
5,923En existencias
|
|
|
$1.58
|
|
|
$1.01
|
|
|
$0.668
|
|
|
$0.526
|
|
|
$0.457
|
|
|
$0.44
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
111 A
|
2.35 mOhms
|
- 20 V, 20 V
|
3.5 V
|
22.1 nC
|
- 55 C
|
+ 175 C
|
53 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS0D7N04XMT1G
- onsemi
-
1:
$2.40
-
188En existencias
-
12,000En pedido
|
N.º de artículo de Mouser
863-NTMFS0D7N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
188En existencias
12,000En pedido
Existencias:
188 Se puede enviar inmediatamente
En pedido:
1,500 Se espera el 27/3/2026
6,000 Se espera el 3/4/2026
4,500 Se espera el 9/9/2026
Plazo de entrega de fábrica:
27 Semanas
|
|
|
$2.40
|
|
|
$1.54
|
|
|
$1.05
|
|
|
$0.858
|
|
|
$0.76
|
|
|
$0.76
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
323 A
|
700 uOhms
|
- 20 V, 20 V
|
3.5 V
|
72.1 nC
|
- 55 C
|
+ 175 C
|
134 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS3D1N04XMT1G
- onsemi
-
1:
$1.33
-
1,349En existencias
|
N.º de artículo de Mouser
863-NTMFS3D1N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
1,349En existencias
|
|
|
$1.33
|
|
|
$0.838
|
|
|
$0.554
|
|
|
$0.433
|
|
|
$0.376
|
|
|
$0.376
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
83 A
|
3.1 mOhms
|
- 20 V, 20 V
|
3.5 V
|
15.6 nC
|
- 55 C
|
+ 175 C
|
39 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D5N04XMT1G
- onsemi
-
1:
$3.21
-
10,500En pedido
|
N.º de artículo de Mouser
863-NTMFS0D5N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
10,500En pedido
En pedido:
3,000 Se espera el 21/4/2026
7,500 Se espera el 12/6/2026
Plazo de entrega de fábrica:
25 Semanas
|
|
|
$3.21
|
|
|
$2.09
|
|
|
$1.59
|
|
|
$1.24
|
|
|
$1.16
|
|
|
$1.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
414 A
|
520 uOhms
|
- 20 V, 20 V
|
3.5 V
|
97.5 nC
|
- 55 C
|
+ 175 C
|
163 W
|
Enhancement
|
Reel, Cut Tape
|
|
