|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 48 mOhm typ., 44 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
- ST8L65N065DM9
- STMicroelectronics
-
1:
$5.76
-
210En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-ST8L65N065DM9
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 48 mOhm typ., 44 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
|
|
210En existencias
|
|
|
$5.76
|
|
|
$4.61
|
|
|
$4.61
|
|
Min.: 1
Mult.: 1
Máx.: 50
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
650 V
|
44 A
|
65 mOhms
|
- 30 V, 30 V
|
4.5 V
|
78 nC
|
- 55 C
|
+ 150 C
|
223 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 38 mOhm typ., 55 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
- ST8L65N050DM9
- STMicroelectronics
-
1:
$7.74
-
210En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-ST8L65N050DM9
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 38 mOhm typ., 55 A MDmesh DM9 Power MOSFET in a PowerFLAT 8x8 HV package
|
|
210En existencias
|
|
|
$7.74
|
|
|
$5.46
|
|
|
$5.46
|
|
Min.: 1
Mult.: 1
Máx.: 50
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
35 mOhms
|
- 30 V, 30 V
|
4.5 V
|
107 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads
- STWA60N035M9
- STMicroelectronics
-
1:
$8.22
-
300En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STWA60N035M9
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads
|
|
300En existencias
|
|
Min.: 1
Mult.: 1
Máx.: 50
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
30 V
|
62 A
|
35 mOhms
|
- 30 V, 30 V
|
4.2 V
|
112 nC
|
- 55 C
|
+ 150 C
|
321 mW
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 p
- STL130N6F7
- STMicroelectronics
-
1:
$2.80
-
20,833En existencias
|
N.º de artículo de Mouser
511-STL130N6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 3 mOhm typ., 130 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 p
|
|
20,833En existencias
|
|
|
$2.80
|
|
|
$1.81
|
|
|
$1.25
|
|
|
$1.02
|
|
|
$0.938
|
|
|
$0.831
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
60 V
|
130 A
|
3.5 mOhms
|
- 20 V, 20 V
|
2 V
|
42 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 17 mOhm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3
- STL8N10F7
- STMicroelectronics
-
1:
$1.43
-
43,912En existencias
|
N.º de artículo de Mouser
511-STL8N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 17 mOhm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3
|
|
43,912En existencias
|
|
|
$1.43
|
|
|
$0.90
|
|
|
$0.597
|
|
|
$0.467
|
|
|
$0.414
|
|
|
Ver
|
|
|
$0.426
|
|
|
$0.394
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
100 V
|
35 A
|
17 mOhms
|
- 20 V, 20 V
|
2.5 V
|
25 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.012 Ohm 138 A MDmesh M5
- STY145N65M5
- STMicroelectronics
-
1:
$34.32
-
2,798En existencias
|
N.º de artículo de Mouser
511-STY145N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.012 Ohm 138 A MDmesh M5
|
|
2,798En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
Max247-3
|
N-Channel
|
1 Channel
|
650 V
|
138 A
|
15 mOhms
|
- 25 V, 25 V
|
4 V
|
414 nC
|
- 55 C
|
+ 150 C
|
625 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET
- STP60N043DM9
- STMicroelectronics
-
1:
$10.69
-
931En existencias
|
N.º de artículo de Mouser
511-STP60N043DM9
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET
|
|
931En existencias
|
|
|
$10.69
|
|
|
$6.03
|
|
|
$5.57
|
|
|
$5.08
|
|
|
$5.07
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
56 A
|
43 mOhms
|
- 30 V, 30 V
|
4.5 V
|
78.6 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 55 A MDmesh M9 Power MOSFET
- STP65N045M9
- STMicroelectronics
-
1:
$8.07
-
542En existencias
|
N.º de artículo de Mouser
511-STP65N045M9
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 55 A MDmesh M9 Power MOSFET
|
|
542En existencias
|
|
|
$8.07
|
|
|
$4.49
|
|
|
$4.13
|
|
|
$3.57
|
|
|
$3.56
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
45 mOhms
|
- 30 V, 30 V
|
4.2 V
|
80 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V Logic Level, 0.55 mOhm STripFET F8 Power MOSFET
- STL325N4LF8AG
- STMicroelectronics
-
1:
$2.12
-
4,718En existencias
|
N.º de artículo de Mouser
511-STL325N4LF8AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V Logic Level, 0.55 mOhm STripFET F8 Power MOSFET
|
|
4,718En existencias
|
|
|
$2.12
|
|
|
$1.57
|
|
|
$1.27
|
|
|
$1.20
|
|
|
$1.16
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
|
|
N-Channel
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 4 AMP
- STN3NF06L
- STMicroelectronics
-
1:
$1.59
-
48,710En existencias
|
N.º de artículo de Mouser
511-STN3NF06L
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 4 AMP
|
|
48,710En existencias
|
|
|
$1.59
|
|
|
$1.00
|
|
|
$0.673
|
|
|
$0.53
|
|
|
$0.403
|
|
|
Ver
|
|
|
$0.483
|
|
|
$0.444
|
|
|
$0.383
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOT-223-4
|
N-Channel
|
1 Channel
|
60 V
|
4 A
|
100 mOhms
|
- 20 V, 20 V
|
1 V
|
7 nC
|
- 55 C
|
+ 150 C
|
3.3 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET
- STD80N340K6
- STMicroelectronics
-
1:
$4.31
-
2,575En existencias
|
N.º de artículo de Mouser
511-STD80N340K6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET
|
|
2,575En existencias
|
|
|
$4.31
|
|
|
$2.84
|
|
|
$2.01
|
|
|
$1.84
|
|
|
$1.55
|
|
|
Ver
|
|
|
$1.83
|
|
|
$1.49
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
12 A
|
340 mOhms
|
- 10 V, 10 V
|
3 V
|
17.8 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel enhancement mode logic level 40V 0.8mOhm 360A STripFET F8 Power MOSFET
- STL320N4LF8
- STMicroelectronics
-
1:
$2.97
-
4,593En existencias
|
N.º de artículo de Mouser
511-STL320N4LF8
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel enhancement mode logic level 40V 0.8mOhm 360A STripFET F8 Power MOSFET
|
|
4,593En existencias
|
|
|
$2.97
|
|
|
$1.92
|
|
|
$1.41
|
|
|
$1.18
|
|
|
$0.967
|
|
|
Ver
|
|
|
$1.02
|
|
|
$0.966
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
40 V
|
360 A
|
800 uOhms
|
- 20 V, 20 V
|
2 V
|
43 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
- STL36DN6F7
- STMicroelectronics
-
1:
$1.42
-
42,415En existencias
|
N.º de artículo de Mouser
511-STL36DN6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
|
|
42,415En existencias
|
|
|
$1.42
|
|
|
$0.897
|
|
|
$0.595
|
|
|
$0.466
|
|
|
$0.37
|
|
|
Ver
|
|
|
$0.424
|
|
|
$0.351
|
|
|
$0.34
|
|
|
$0.333
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
2 Channel
|
60 V
|
33 A
|
23 mOhms, 23 mOhms
|
- 20 V, 20 V
|
2 V
|
8 nC
|
- 55 C
|
+ 175 C
|
58 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.013Ohm 12A VII DeepGate
- STL60N10F7
- STMicroelectronics
-
1:
$1.87
-
27,500En existencias
|
N.º de artículo de Mouser
511-STL60N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 100V 0.013Ohm 12A VII DeepGate
|
|
27,500En existencias
|
|
|
$1.87
|
|
|
$1.20
|
|
|
$0.801
|
|
|
$0.634
|
|
|
$0.586
|
|
|
$0.535
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
100 V
|
12 A
|
16.5 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25 nC
|
- 55 C
|
+ 175 C
|
5 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel 30 V, 0.024 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3
- STL6P3LLH6
- STMicroelectronics
-
1:
$1.60
-
33,837En existencias
|
N.º de artículo de Mouser
511-STL6P3LLH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel 30 V, 0.024 Ohm typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3
|
|
33,837En existencias
|
|
|
$1.60
|
|
|
$1.02
|
|
|
$0.678
|
|
|
$0.533
|
|
|
$0.402
|
|
|
Ver
|
|
|
$0.487
|
|
|
$0.398
|
|
|
$0.387
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
P-Channel
|
1 Channel
|
30 V
|
6 A
|
30 mOhms
|
- 20 V, 20 V
|
1 V
|
12 nC
|
- 55 C
|
+ 150 C
|
2.9 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch 60 V, 0.13 Ohm 3 A STripFET VI
- STN3P6F6
- STMicroelectronics
-
1:
$1.37
-
44,570En existencias
|
N.º de artículo de Mouser
511-STN3P6F6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch 60 V, 0.13 Ohm 3 A STripFET VI
|
|
44,570En existencias
|
|
|
$1.37
|
|
|
$0.70
|
|
|
$0.497
|
|
|
$0.413
|
|
|
Ver
|
|
|
$0.317
|
|
|
$0.376
|
|
|
$0.361
|
|
|
$0.317
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
SOT-223-4
|
P-Channel
|
1 Channel
|
60 V
|
3 A
|
160 mOhms
|
- 20 V, 20 V
|
2 V
|
6.4 nC
|
- 55 C
|
+ 175 C
|
2.6 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
- STP45N65M5
- STMicroelectronics
-
1:
$7.19
-
4,094En existencias
|
N.º de artículo de Mouser
511-STP45N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS
|
|
4,094En existencias
|
|
|
$7.19
|
|
|
$4.60
|
|
|
$4.29
|
|
|
$3.74
|
|
|
Ver
|
|
|
$3.73
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
78 mOhms
|
- 25 V, 25 V
|
5 V
|
82 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 100 V, 0.0125 Ohm typ., 45 A STripFET F7 Power MOSFET
- STD47N10F7AG
- STMicroelectronics
-
1:
$2.43
-
18,993En existencias
|
N.º de artículo de Mouser
511-STD47N10F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 100 V, 0.0125 Ohm typ., 45 A STripFET F7 Power MOSFET
|
|
18,993En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.854
|
|
|
Ver
|
|
|
$0.727
|
|
|
$0.84
|
|
|
$0.727
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
22 A
|
18 mOhms
|
- 20 V, 20 V
|
2.5 V
|
25 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in
- STH410N4F7-6AG
- STMicroelectronics
-
1:
$5.60
-
701En existencias
|
N.º de artículo de Mouser
511-STH410N4F7-6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in
|
|
701En existencias
|
|
|
$5.60
|
|
|
$3.74
|
|
|
$3.01
|
|
|
$2.68
|
|
|
$2.07
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
H2PAK-6
|
N-Channel
|
1 Channel
|
40 V
|
200 A
|
1.1 mOhms
|
- 20 V, 20 V
|
4 V
|
120 nC
|
- 55 C
|
+ 150 C
|
365 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.155 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8
- STL28N60DM2
- STMicroelectronics
-
1:
$4.66
-
1,256En existencias
|
N.º de artículo de Mouser
511-STL28N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.155 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8
|
|
1,256En existencias
|
|
|
$4.66
|
|
|
$3.08
|
|
|
$2.41
|
|
|
$2.14
|
|
|
$1.83
|
|
|
$1.65
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
600 V
|
21 A
|
175 mOhms
|
- 25 V, 25 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
140 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55 Volt 80 Amp
- STB140NF55T4
- STMicroelectronics
-
1:
$3.19
-
1,958En existencias
|
N.º de artículo de Mouser
511-STB140NF55
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 55 Volt 80 Amp
|
|
1,958En existencias
|
|
|
$3.19
|
|
|
$2.08
|
|
|
$1.54
|
|
|
$1.33
|
|
|
$1.09
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
55 V
|
80 A
|
8 mOhms
|
- 20 V, 20 V
|
2 V
|
142 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168Ohm 18A MDmesh M2
- STB24N60M2
- STMicroelectronics
-
1:
$3.53
-
2,628En existencias
|
N.º de artículo de Mouser
511-STB24N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168Ohm 18A MDmesh M2
|
|
2,628En existencias
|
|
|
$3.53
|
|
|
$2.30
|
|
|
$1.62
|
|
|
$1.41
|
|
|
$1.23
|
|
|
Ver
|
|
|
$1.21
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
190 mOhms
|
- 25 V, 25 V
|
4 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a D2PAK package
- STB24N60M6
- STMicroelectronics
-
1:
$3.52
-
1,580En existencias
|
N.º de artículo de Mouser
511-STB24N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 162 mOhm typ., 17 A MDmesh M6 Power MOSFET in a D2PAK package
|
|
1,580En existencias
|
|
|
$3.52
|
|
|
$2.30
|
|
|
$1.61
|
|
|
$1.40
|
|
|
$1.28
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
190 mOhms
|
- 25 V, 25 V
|
3.25 V
|
23 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.124 Ohm 22 A MDmesh M5
- STB31N65M5
- STMicroelectronics
-
1:
$5.05
-
836En existencias
|
N.º de artículo de Mouser
511-STB31N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.124 Ohm 22 A MDmesh M5
|
|
836En existencias
|
|
|
$5.05
|
|
|
$3.35
|
|
|
$2.66
|
|
|
$2.36
|
|
|
$1.83
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
22 A
|
148 mOhms
|
- 25 V, 25 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package
- STB33N65M2
- STMicroelectronics
-
1:
$5.05
-
4,482En existencias
|
N.º de artículo de Mouser
511-STB33N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package
|
|
4,482En existencias
|
|
|
$5.05
|
|
|
$3.36
|
|
|
$2.40
|
|
|
$2.28
|
|
|
$1.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
140 mOhms
|
- 20 V, 20 V
|
2 V
|
41.5 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|