|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R024CFD7XKSA1
- Infineon Technologies
-
1:
$15.75
-
343En existencias
|
N.º de artículo de Mouser
726-IPW60R024CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
343En existencias
|
|
|
$15.75
|
|
|
$9.65
|
|
|
$8.31
|
|
|
$7.71
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
77 A
|
24 mOhms
|
- 20 V, 20 V
|
4 V
|
183 nC
|
- 55 C
|
+ 150 C
|
320 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R031CFD7XKSA1
- Infineon Technologies
-
1:
$12.49
-
625En existencias
|
N.º de artículo de Mouser
726-IPW60R031CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
625En existencias
|
|
|
$12.49
|
|
|
$7.51
|
|
|
$6.46
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
63 A
|
26 mOhms
|
- 20 V, 20 V
|
3.5 V
|
141 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R040CFD7XKSA1
- Infineon Technologies
-
1:
$10.53
-
717En existencias
|
N.º de artículo de Mouser
726-IPW60R040CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
717En existencias
|
|
|
$10.53
|
|
|
$6.24
|
|
|
$6.20
|
|
|
$5.50
|
|
|
$5.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
50 A
|
40 mOhms
|
- 20 V, 20 V
|
3.5 V
|
109 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R070CFD7XKSA1
- Infineon Technologies
-
1:
$7.73
-
1,939En existencias
|
N.º de artículo de Mouser
726-IPW60R070CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,939En existencias
|
|
|
$7.73
|
|
|
$4.59
|
|
|
$3.85
|
|
|
$3.55
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
57 mOhms
|
- 20 V, 20 V
|
3.5 V
|
67 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW65R041CFD7XKSA1
- Infineon Technologies
-
1:
$10.93
-
400En existencias
|
N.º de artículo de Mouser
726-IPW65R041CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
400En existencias
|
|
|
$10.93
|
|
|
$6.48
|
|
|
$5.51
|
|
|
$5.41
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
700 V
|
68.5 A
|
41 mOhms
|
- 20 V, 20 V
|
4 V
|
102 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPA60R280CFD7XKSA1
- Infineon Technologies
-
1:
$3.39
-
348En existencias
|
N.º de artículo de Mouser
726-IPA60R280CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
348En existencias
|
|
|
$3.39
|
|
|
$1.70
|
|
|
$1.53
|
|
|
$1.21
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
6 A
|
237 mOhms
|
- 20 V, 20 V
|
3.5 V
|
18 nC
|
- 55 C
|
+ 150 C
|
24 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R125CFD7XKSA1
- Infineon Technologies
-
1:
$5.10
-
500En existencias
|
N.º de artículo de Mouser
726-IPP60R125CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
500En existencias
|
|
|
$5.10
|
|
|
$2.64
|
|
|
$2.26
|
|
|
$1.97
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
125 mOhms
|
- 20 V, 20 V
|
3.5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R090CFD7XTMA1
- Infineon Technologies
-
1:
$5.63
-
517En existencias
|
N.º de artículo de Mouser
726-IPT60R090CFD7XTM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
517En existencias
|
|
|
$5.63
|
|
|
$3.75
|
|
|
$2.86
|
|
|
$2.54
|
|
|
$2.27
|
|
|
$2.27
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
90 mOhms
|
- 20 V, 20 V
|
4 V
|
42 nC
|
- 55 C
|
+ 150 C
|
160 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R125CFD7XKSA1
- Infineon Technologies
-
1:
$5.83
-
254En existencias
|
N.º de artículo de Mouser
726-IPW60R125CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
254En existencias
|
|
|
$5.83
|
|
|
$3.28
|
|
|
$2.72
|
|
|
$2.35
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
125 mOhms
|
- 20 V, 20 V
|
3.5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R105CFD7ATMA1
- Infineon Technologies
-
1:
$5.60
-
425En existencias
-
1,000Se espera el 27/8/2026
|
N.º de artículo de Mouser
726-IPB60R105CFD7ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
425En existencias
1,000Se espera el 27/8/2026
|
|
|
$5.60
|
|
|
$3.73
|
|
|
$2.67
|
|
|
$2.42
|
|
|
$2.28
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
21 A
|
105 mOhms
|
- 20 V, 20 V
|
4.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
106 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPL60R115CFD7AUMA1
- Infineon Technologies
-
1:
$5.23
-
420En existencias
|
N.º de artículo de Mouser
726-IPL60R115CFD7AUM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
420En existencias
|
|
|
$5.23
|
|
|
$3.47
|
|
|
$2.47
|
|
|
$2.18
|
|
|
$2.14
|
|
|
$2.05
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
115 mOhms
|
- 20 V, 20 V
|
3.5 V
|
42 nC
|
- 40 C
|
+ 150 C
|
124 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP60R280CFD7XKSA1
- Infineon Technologies
-
1:
$3.38
-
712En existencias
|
N.º de artículo de Mouser
726-IPP60R280CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
712En existencias
|
|
|
$3.38
|
|
|
$1.69
|
|
|
$1.53
|
|
|
$1.29
|
|
|
$1.13
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
237 mOhms
|
- 20 V, 20 V
|
3.5 V
|
18 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP65R060CFD7XKSA1
- Infineon Technologies
-
1:
$8.11
-
88En existencias
|
N.º de artículo de Mouser
726-IPP65R060CFD7SA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
88En existencias
|
|
|
$8.11
|
|
|
$4.38
|
|
|
$3.65
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
36 A
|
60 mOhms
|
- 10 V, 10 V
|
4.5 V
|
68 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPB60R145CFD7ATMA1
- Infineon Technologies
-
1:
$4.26
-
73En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPB60R145CFD7ATM
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
73En existencias
|
|
|
$4.26
|
|
|
$2.81
|
|
|
$1.98
|
|
|
$1.82
|
|
|
$1.74
|
|
|
$1.70
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
145 mOhms
|
- 20 V, 20 V
|
4.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R145CFD7XKSA1
- Infineon Technologies
-
1:
$5.02
-
15En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-IPW60R145CFD7XKS
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
15En existencias
|
|
|
$5.02
|
|
|
$3.90
|
|
|
$3.14
|
|
|
$2.94
|
|
|
Ver
|
|
|
$2.87
|
|
|
$2.81
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
145 mOhms
|
- 20 V, 20 V
|
3.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R035CFD7XTMA1
- Infineon Technologies
-
1:
$12.43
-
4,000Se espera el 4/2/2027
|
N.º de artículo de Mouser
726-IPT60R035CFD7XTM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
4,000Se espera el 4/2/2027
|
|
|
$12.43
|
|
|
$8.55
|
|
|
$7.10
|
|
|
$6.78
|
|
|
$6.41
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
67 A
|
35 mOhms
|
- 20 V, 20 V
|
4 V
|
109 nC
|
- 55 C
|
+ 150 C
|
351 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R090CFD7XKSA1
- Infineon Technologies
-
1:
$6.82
-
1,680En pedido
|
N.º de artículo de Mouser
726-IPW60R090CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,680En pedido
En pedido:
480 Se espera el 20/8/2026
240 Se espera el 7/9/2026
960 Se espera el 7/10/2026
Plazo de entrega de fábrica:
18 Semanas
|
|
|
$6.82
|
|
|
$3.89
|
|
|
$3.69
|
|
|
$2.90
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
25 A
|
90 mOhms
|
- 20 V, 20 V
|
3.5 V
|
51 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R145CFD7XKSA1
- Infineon Technologies
-
1:
$4.52
-
495Se espera el 28/1/2027
|
N.º de artículo de Mouser
726-IPP60R145CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
495Se espera el 28/1/2027
|
|
|
$4.52
|
|
|
$2.32
|
|
|
$2.11
|
|
|
$1.72
|
|
|
$1.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
145 mOhms
|
- 20 V, 20 V
|
3.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R105CFD7XKSA1
- Infineon Technologies
-
500:
$2.24
-
Plazo de entrega no en existencias 8 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPP60R105CFD7XKS
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
Plazo de entrega no en existencias 8 Semanas
|
|
Min.: 500
Mult.: 500
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
21 A
|
105 mOhms
|
- 20 V, 20 V
|
3.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
106 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R170CFD7XKSA1
- Infineon Technologies
-
1:
$4.65
-
Plazo de entrega 8 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPW60R170CFD7XKS
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
Plazo de entrega 8 Semanas
|
|
|
$4.65
|
|
|
$2.58
|
|
|
$2.12
|
|
|
$1.77
|
|
|
$1.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
14 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
28 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R125CFD7XTMA1
- Infineon Technologies
-
1:
$4.75
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Plazo de entrega 19 Semanas
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N.º de artículo de Mouser
726-IPT60R125CFD7XTM
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Infineon Technologies
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
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Plazo de entrega 19 Semanas
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$4.75
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$3.14
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$2.22
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$1.92
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$1.89
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$1.80
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Min.: 1
Mult.: 1
:
2,000
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Si
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SMD/SMT
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HSOF-8
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N-Channel
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1 Channel
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650 V
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21 A
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125 mOhms
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- 20 V, 20 V
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4 V
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8 nC
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- 55 C
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+ 150 C
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127 W
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Enhancement
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Reel, Cut Tape, MouseReel
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPW60R105CFD7XKSA1
- Infineon Technologies
-
1:
$6.95
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Plazo de entrega no en existencias 8 Semanas
-
Fin de vida útil
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N.º de artículo de Mouser
726-IPW60R105CFD7XKS
Fin de vida útil
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Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
Plazo de entrega no en existencias 8 Semanas
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$6.95
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$4.02
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$2.85
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$2.76
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$2.64
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Min.: 1
Mult.: 1
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Si
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Through Hole
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TO-247-3
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N-Channel
|
1 Channel
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600 V
|
21 A
|
105 mOhms
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- 20 V, 20 V
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3.5 V
|
42 nC
|
- 55 C
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+ 150 C
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106 W
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Enhancement
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Tube
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