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Nexperia Small-Signal MOSFETs (SSMOS) for Portables

Nexperia Small-Signal MOSFETs (SSMOS) for Portables offer WLCSP and leadless DFN packages for mobile and portable applications. The Nexperia SSMOS packages provide an extremely small DFN solution in today's commonly used pitch size of 0.35mm. An ideal replacement solution where space is paramount, these ultra-small packages offer significant space efficiency while providing minimal effort on assembly adjustment. Available in both N-channel and P-channel, all parts are equipped with ESD protection of >2kV and with a high power capability of >1300mW.

The package options for the Nexperia Small-Signal MOSFETs include the ultra-low-profile DFN0603, which measures only 0.63mm x 0.33mm x 0.25mm. This package uses 13% less space than MOSFETs in the next smallest package, DFN0604. Additionally, this size reduction has been achieved without compromising device performance, as the RDS(on) of these devices has been reduced by 74%, helping to improve efficiency and thereby enabling wearable equipment designers to achieve even greater power density.

Features

  • PMPB09R1XN, PMPB10R3XN, PMPB14R8XN
    • 30V VDS, N-channel enhancement mode Field-Effect Transistor (FET)
    • 2mmm x 2mm x 0.65mm leadless medium power DFN2020M-6 (SOT1220-2) SMD plastic package
  • PMPB19R0UPE, PMDXB290UNE
    • 20V, P-channel enhancement mode Field-Effect Transistor (FET)
    • PMPB19R0UPE 2mm x 2mm x 0.65mm leadless medium power DFN2020M-6 (SOT1220-2) SMD plastic package
    • PMDXB290UNE 1.1mm x 1mm x 0.37mm leadless thermal enhanced ultrathin small outline package DFN1010B-6 (SOT1216)
  • Package options include ultra-low-profile DFN0603
  • Replacement of larger packages - performance improvements in wafer technology and package technology enable higher electrical and thermal performance on a smaller footprint
  • High power capability
  • Pitch size compatibility across DFN0606 and DFN1006
  • Improved RDS(on) performance

Applications

  • Load switching
  • Wireless charging
  • Battery switch
  • LED driver
  • Charging switch for portable devices
  • Hard disk and computing power management
  • Power management in battery-driven portables
  • Level translator
  • DC/DC conversion
  • Relay driver
  • High-speed line driver

Resources

Videos

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Space Savings Comparison

Nexperia Small-Signal MOSFETs (SSMOS) for Portables
View Results ( 16 ) Page
N.º de artículo Hoja de datos Descripción
PMCB60XNEZ PMCB60XNEZ Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT8026 N-CH 30V 3.5A
PMCA14UNYL PMCA14UNYL Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT8007 N-CH 12V 11A
PMCB60XNZ PMCB60XNZ Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT8026 N-CH 30V 4A
NX138AKHH NX138AKHH Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT8001 N-CH 60V .26A
PMPB07R3ENAX PMPB07R3ENAX Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT1220 N-CH 30V 12A
PMPB07R3ENX PMPB07R3ENX Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT1220 N-CH 30V 12A
PMPB33XPZ PMPB33XPZ Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PMPB33XP/SOT1220/DFN2020MD-6
PMX100UNZ PMX100UNZ Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT8013 N-CH 20V 1.3A
PMX300UNEZ PMX300UNEZ Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT8013 N-CH 30V .82A
PMX400UPZ PMX400UPZ Hoja de datos Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SOT8013 P-CH 20V .9A
Publicado: 2021-02-24 | Actualizado: 2025-07-15